DRAM 128M, 3.3V, M-SDRAM 4Mx32, 133Mhz, RoHS
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | ISSI(芯成半导体) |
产品种类 Product Category | DRAM |
RoHS | Details |
类型 Type | SDRAM Mobile |
封装 / 箱体 Package / Case | BGA-90 |
系列 Packaging | Reel |
Moisture Sensitive | Yes |
工厂包装数量 Factory Pack Quantity | 2500 |
IS42SM32400H-75BLI-TR | IS42RM32400H-6BLI-TR | IS42SM32400H-75BLI | IS42RM32400H-6BLI | IS42SM32400H-6BLI | IS42RM32400H-75BLI-TR | IS42VM32400H-6BLI | |
---|---|---|---|---|---|---|---|
描述 | DRAM 128M, 3.3V, M-SDRAM 4Mx32, 133Mhz, RoHS | DRAM 128M, 2.5V, M-SDRAM 4Mx32, 166Mhz, RoHS | DRAM 128M, 3.3V, M-SDRAM 4Mx32, 133Mhz, RoHS | DRAM 128M, 2.5V, M-SDRAM 4Mx32, 166Mhz, RoHS | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 | DRAM 128M, 2.5V, M-SDRAM 4Mx32, 133Mhz, RoHS | DRAM 128M, 1.8V, M-SDRAM 4Mx32, 166Mhz, RoHS |
系列 Packaging |
Reel | Reel | Reel | Reel | - | Reel | Reel |
Product Attribute | Attribute Value | Attribute Value | Attribute Value | Attribute Value | - | Attribute Value | Attribute Value |
制造商 Manufacturer |
ISSI(芯成半导体) | ISSI(芯成半导体) | ISSI(芯成半导体) | ISSI(芯成半导体) | - | ISSI(芯成半导体) | ISSI(芯成半导体) |
产品种类 Product Category |
DRAM | DRAM | DRAM | DRAM | - | DRAM | DRAM |
RoHS | Details | Details | Details | Details | - | Details | Details |
类型 Type |
SDRAM Mobile | SDRAM Mobile | SDRAM Mobile | SDRAM Mobile | - | SDRAM Mobile | SDRAM Mobile |
封装 / 箱体 Package / Case |
BGA-90 | BGA-90 | BGA-90 | BGA-90 | - | BGA-90 | BGA-90 |
Moisture Sensitive | Yes | Yes | Yes | Yes | - | Yes | Yes |
工厂包装数量 Factory Pack Quantity |
2500 | 2500 | 240 | 240 | - | 2500 | 240 |
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