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IS42VM32400H-6BLI: 产品描述DRAM 128M, 1.8V, M-SDRAM 4Mx32, 166Mhz, RoHS; 产品类别存储; 文件大小602KB，共34页; 制造商ISSI(芯成半导体); 官网地址http://www.issi.com/; 标准

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DRAM 128M, 1.8V, M-SDRAM 4Mx32, 166Mhz, RoHS

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	ISSI(芯成半导体)
产品种类 Product Category	DRAM
RoHS	Details
类型 Type	SDRAM Mobile
封装 / 箱体 Package / Case	BGA-90
系列 Packaging	Reel
Moisture Sensitive	Yes
工厂包装数量 Factory Pack Quantity	240

	IS42VM32400H-6BLI	IS42RM32400H-6BLI-TR	IS42SM32400H-75BLI	IS42RM32400H-6BLI	IS42SM32400H-75BLI-TR	IS42SM32400H-6BLI	IS42RM32400H-75BLI-TR
描述	DRAM 128M, 1.8V, M-SDRAM 4Mx32, 166Mhz, RoHS	DRAM 128M, 2.5V, M-SDRAM 4Mx32, 166Mhz, RoHS	DRAM 128M, 3.3V, M-SDRAM 4Mx32, 133Mhz, RoHS	DRAM 128M, 2.5V, M-SDRAM 4Mx32, 166Mhz, RoHS	DRAM 128M, 3.3V, M-SDRAM 4Mx32, 133Mhz, RoHS	Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90	DRAM 128M, 2.5V, M-SDRAM 4Mx32, 133Mhz, RoHS
系列 Packaging	Reel	Reel	Reel	Reel	Reel	-	Reel
Product Attribute	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	-	Attribute Value
制造商 Manufacturer	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	-	ISSI(芯成半导体)
产品种类 Product Category	DRAM	DRAM	DRAM	DRAM	DRAM	-	DRAM
RoHS	Details	Details	Details	Details	Details	-	Details
类型 Type	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	SDRAM Mobile	-	SDRAM Mobile
封装 / 箱体 Package / Case	BGA-90	BGA-90	BGA-90	BGA-90	BGA-90	-	BGA-90
Moisture Sensitive	Yes	Yes	Yes	Yes	Yes	-	Yes
工厂包装数量 Factory Pack Quantity	240	2500	240	240	2500	-	2500

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