MOSFET 40V 3Ohm
| 参数名称 | 属性值 |
| Product Attribute | Attribute Value |
| 制造商 Manufacturer | Microchip(微芯科技) |
| 产品种类 Product Category | MOSFET |
| RoHS | Details |
| 技术 Technology | Si |
| 安装风格 Mounting Style | Through Hole |
| 封装 / 箱体 Package / Case | TO-92-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Id - Continuous Drain Current | 350 mA |
| Rds On - Drain-Source Resistance | 3 Ohms |
| Vgs - Gate-Source Voltage | 20 V |
| Configuration | Single |
| Pd-功率耗散 Pd - Power Dissipation | 1 W |
| 系列 Packaging | Cut Tape |
| 系列 Packaging | Reel |
| Transistor Type | 1 N-Channel |
| 类型 Type | FET |
| 工厂包装数量 Factory Pack Quantity | 2000 |
| 单位重量 Unit Weight | 0.016000 oz |
| VN0104N3-P014-G | VN0104N3 | VN0104N3-P013 | |
|---|---|---|---|
| 描述 | MOSFET 40V 3Ohm | MOSFET 40V 3Ohm | MOSFET 40V 3Ohm |
| Product Attribute | Attribute Value | Attribute Value | Attribute Value |
| 制造商 Manufacturer |
Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) |
| 产品种类 Product Category |
MOSFET | MOSFET | MOSFET |
| RoHS | Details | N | N |
| 技术 Technology |
Si | Si | Si |
| 安装风格 Mounting Style |
Through Hole | Through Hole | Through Hole |
| 封装 / 箱体 Package / Case |
TO-92-3 | TO-92-3 | TO-92-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id - Continuous Drain Current | 350 mA | 350 mA | 350 mA |
| Rds On - Drain-Source Resistance | 3 Ohms | 3 Ohms | 3 Ohms |
| Vgs - Gate-Source Voltage | 20 V | 20 V | 20 V |
| Configuration | Single | Single | Single |
| Pd-功率耗散 Pd - Power Dissipation |
1 W | 1 W | 1 W |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| 工厂包装数量 Factory Pack Quantity |
2000 | 1000 | 2000 |
| 单位重量 Unit Weight |
0.016000 oz | 0.016000 oz | 0.007760 oz |
| 类型 Type |
FET | - | FET |
| 最小工作温度 Minimum Operating Temperature |
- | - 55 C | - 55 C |
| 最大工作温度 Maximum Operating Temperature |
- | + 150 C | + 150 C |
| Channel Mode | - | Enhancement | Enhancement |
| Fall Time | - | 5 ns | 5 ns |
| Rise Time | - | 5 ns | 5 ns |
| Typical Turn-Off Delay Time | - | 6 ns | 6 ns |
| Typical Turn-On Delay Time | - | 3 ns | 3 ns |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
