IS61LV12824

128K x 24 HIGH-SPEED CMOS STATIC RAM

WITH 3.3V SUPPLY

FEATURES

• High-speed access time: 8, 10 ns

• CMOS low power operation

— 756 mW (max.) operating @ 8 ns

— 36 mW (max.) standby @ 8 ns

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh

required

• Three state outputs

• Available in 119-pin Plastic Ball Grid Array

(PBGA) and 100-pin TQFP packages.

• Industrial temperature available

• Lead-free available

ISSI

JUNE 2005

®

DESCRIPTION

The

ISSI

IS61LV12824 is a high-speed, static RAM organized

as 131,072 words by 24 bits. It is fabricated using

ISSI

's high-

performance CMOS technology. This highly reliable process

coupled with innovative circuit design techniques, yields ac-

cess times as fast as 8 ns with low power consumption.

When

CE1, CE2

are HIGH and CE2 is LOW (deselected), the

device assumes a standby mode at which the power dissipa-

tion can be reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs,

CE1,

CE2,

CE2

and

OE.

The active

LOW Write Enable (WE) controls both writing and reading of

the memory.

The IS61LV12824 is packaged in the JEDEC standard

119-pin PBGA and 100-pin TQFP.

FUNCTIONAL BLOCK DIAGRAM

A0-A16

DECODER

128K x 24

MEMORY ARRAY

VCC

GND

I/O

DATA

CIRCUIT

I/O0-I/O23

COLUMN I/O

CE2

CE1

CE2

OE

WE

CONTROL

CIRCUIT

Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any

published information and before placing orders for products.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. D

06/22/05

1

IS61LV12824

ISSI

PIN DESCRIPTIONS

6

A4

A3

NC

V

CCQ

GND

V

CCQ

GND

V

CCQ

GND

V

CCQ

GND

V

CCQ

GND

V

CCQ

NC

A1

A2

7

NC

I/O0

I/O1

I/O2

I/O3

I/O4

I/O5

V

CCQ

I/O6

I/O7

I/O8

I/O9

I/O10

I/O11

NC

A0-A16

CE1, CE2

CE2

OE

WE

NC

Vcc

V

CCQ

GND

Address Inputs

Chip Enable Input LOW

I/O0-I/O23 Data Inputs/Outputs

3

A14

A13

CE2

GND

V

CC

GND

V

CC

GND

V

CC

GND

V

CC

GND

V

CC

GND

NC

A8

A7

4

A15

CE1

NC

GND

NC

WE

OE

5

A16

A5

CE2

GND

V

CC

GND

V

CC

GND

V

CC

GND

V

CC

GND

V

CC

GND

NC

A0

A6

®

PIN CONFIGURATION - 119-pin PBGA

1

A

B

C

D

E

F

G

H

J

K

L

M

N

P

R

T

U

NC

I/O16

I/O17

I/O18

I/O19

I/O20

I/O21

V

CCQ

I/O22

I/O23

I/O12

I/O13

I/O14

I/O15

NC

2

A11

A12

NC

V

CCQ

GND

V

CCQ

GND

V

CCQ

GND

V

CCQ

GND

V

CCQ

GND

V

CCQ

NC

A10

A9

Chip Enable Input HIGH

Output Enable Input

Write Enable Input

No Connection

Power

I/O Power

Ground

2

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. D

06/22/05

IS61LV12824

PIN CONFIGURATION

100-Pin TQFP

NC

A11

A12

A13

A14

A15

CE2

Vcc

GND

CE2

CE1

A16

A5

A4

A3

NC

ISSI

®

1

80

79

78

77

76

75

74

73

72

71

70

69

68

67

66

65

64

63

62

61

60

59

58

57

56

55

54

53

52

51

NC

Vcc

GND

I/O0

I/O1

GND

Vcc

Q

I/O2

I/O3

GND

Vcc

Q

I/O4

I/O5

Vcc

NC

GND

I/O6

I/O7

Vcc

Q

GND

I/O8

I/O9

Vcc

Q

GND

I/O10

I/O11

Vcc

GND

NC

100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81

NC

Vcc

GND

I/O16

I/O17

GND

Vcc

Q

I/O18

I/O19

GND

Vcc

Q

I/O20

I/O21

Vcc

NC

GND

I/O22

I/O23

Vcc

Q

GND

I/O12

I/O13

Vcc

Q

GND

I/O14

I/O15

Vcc

GND

NC

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50

2

3

4

5

6

7

8

9

10

11

12

PIN DESCRIPTIONS

A0-A16

I/O0-I/O23

CE1, CE2

CE2

OE

WE

NC

Vcc

V

CCQ

GND

Address Inputs

Data Inputs/Outputs

Chip Enable Input LOW

Chip Enable Input HIGH

Output Enable Input

Write Enable Input

No Connection

Power

I/O Power

Ground

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. D

06/22/05

NC

A10

A9

A8

A7

OE

GND

Vcc

WE

A6

A0

A1

A2

NC

3

IS61LV12824

TRUTH TABLE

Mode

Not Selected

WE

X

H

L

CE1

H

X

L

CE2

X

L

X

H

CE2

X

H

L

OE

X

H

L

X

I/O0-I/O23

High-Z

Vcc Current

I

SB

1

, I

SB

2

ISSI

High-Z

D

OUT

D

IN

I

CC

I

CC

I

CC

®

Output Disabled

Read

Write

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol

V

CC

V

TERM

T

STG

T

BIAS

P

T

I

OUT

Parameter

Power Supply Voltage Relative to GND

Terminal Voltage with Respect to GND

Storage Temperature

Temperature Under Bias:

Com.

Ind.

Power Dissipation

DC Output Current

Value

–0.5 to 5.0

–0.5 to Vcc + 0.5

–65 to + 150

–10 to + 85

–45 to + 90

2.0

±20

Unit

V

°C

W

mA

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at these or

any other conditions above those indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

OPERATING RANGE

Range

Commercial

Industrial

Ambient Temperature

0°C to +70°C

–40°C to +85°C

V

CC

(8 ns)

3.3V + 10%, – 5%

V

CC

(10 ns)

3.3V ± 10%

DC ELECTRICAL CHARACTERISTICS

(Over Operating Range)

Symbol

V

OH

V

OL

V

IH

V

IL

I

LI

I

LO

Parameter

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

Input LOW Voltage

(1)

Input Leakage

Output Leakage

GND

≤

V

IN

≤

V

CC

GND

≤

V

OUT

≤

V

CC

, Outputs Disabled

Test Conditions

V

CC

= Min., I

OH

= –4.0 mA

V

CC

= Min., I

OL

= 8.0 mA

Min.

2.4

—

2.2

–0.3

–1

Max.

—

0.4

V

CC

+ 0.3

0.8

1

Unit

V

µA

Note:

1. V

IL

(min.) = –0.3V DC; V

IL

(min.) = –2.0V AC (pulse width

≤

2.0 ns).

V

IH

(max.) = V

CC

+ 0.3V DC; V

IH

(max.) = V

CC

+ 2.0V AC (pulse width

≤

2.0 ns).

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. D

06/22/05

IS61LV12824

POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

-8 ns

Symbol

I

CC

I

SB

1

Parameter

Vcc Dynamic Operating

Supply Current

TTL Standby Current

(TTL Inputs)

CMOS Standby

Current (CMOS Inputs)

Test Conditions

V

CC

= Max.,

I

OUT

= 0 mA, f = f

MAX

Com.

Ind.

Min.

Max.

ISSI

-10 ns

Min.

Max.

®

Unit

mA

—

210

240

70

80

10

20

—

180

210

50

55

10

20

1

2

V

CC

= Max.,

Com.

V

IN

= V

IH

or V

IL

, f = max.

Ind.

CE1, CE2,

≥

V

IH

, CE2

≤

V

IL

V

CC

= Max.,

Com.

CE1, CE2

≥

V

CC

– 0.2V,

Ind.

CE2

≤

0.2V, V

IN

≥

V

CC

– 0.2V,

or V

IN

≤

0.2V, f = 0

I

SB

2

mA

3

4

5

6

7

8

9

Note:

1. At f = f

MAX

, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

CAPACITANCE

(1)

Symbol

C

IN

C

OUT

Parameter

Input Capacitance

Input/Output Capacitance

Conditions

V

IN

= 0V

V

OUT

= 0V

Max.

6

8

Unit

pF

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

AC TEST CONDITIONS

Parameter

Input Pulse Level

Input Rise and Fall Times

Input and Output Timing

and Reference Level

Output Load

Unit

0V to 3.0V

2 ns

1.5V

See Figures 1 and 2

AC TEST LOADS

319

Ω

10

11

353

Ω

Z

O

= 50Ω

OUTPUT

50Ω

3.3V

OUTPUT

5 pF

Including

jig and

scope

1.5V

12

Figure 1

Figure 2

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. D

06/22/05

5

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	ISSI(芯成半导体)
产品种类 Product Category	SRAM
RoHS	N
Memory Size	3 Mbit
Organization	128 k x 24
Access Time	8 ns
接口类型 Interface Type	Parallel
电源电压-最大 Supply Voltage - Max	3.63 V
电源电压-最小 Supply Voltage - Min	3.135 V
Supply Current - Max	210 mA
最小工作温度 Minimum Operating Temperature	0 C
最大工作温度 Maximum Operating Temperature	+ 70 C
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	TQFP-100
系列 Packaging	Reel
数据速率 Data Rate	SDR
类型 Type	Asynchronous
Number of Ports	1
Moisture Sensitive	Yes
工厂包装数量 Factory Pack Quantity	800
单位重量 Unit Weight	0.023175 oz

	IS61LV12824-8TQ-TR	IS61LV12824-10BL	IS61LV12824-10TQLI	IS61LV12824-10TQLI-TR	IS61LV12824-10B	IS61LV12824-8BL-TR	IS61LV12824-10TQ-TR	IS61LV12824-8BL	IS61LV12824-10TQI
描述	SRAM 3Mb 128Kx24 8ns 3.3v Async SRAM 3.3v	SRAM 3Mb 128Kx24 10ns Async SRAM 3.3v	SRAM 3Mb 128Kx24 10ns Async SRAM 3.3v	SRAM 3Mb 128Kx24 10ns Async SRAM 3.3v	SRAM 3Mb 128Kx24 10ns Async SRAM 3.3v	SRAM 3M (128Kx24) 8ns Async SRAM 3.3v	SRAM 3Mb 128Kx24 10ns Async SRAM 3.3v	SRAM 3M (128Kx24) 8ns Async SRAM 3.3v	SRAM 3Mb 128Kx24 10ns Async SRAM 3.3v
Product Attribute	Attribute Value	-	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	-
制造商 Manufacturer	ISSI(芯成半导体)	-	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	-
产品种类 Product Category	SRAM	-	SRAM	SRAM	SRAM	SRAM	SRAM	SRAM	-
RoHS	N	-	Details	Details	N	Details	N	Details	-
Memory Size	3 Mbit	-	3 Mbit	3 Mbit	3 Mbit	3 Mbit	3 Mbit	3 Mbit	-
Organization	128 k x 24	-	128 k x 24	128 k x 24	128 k x 24	-	128 k x 24	-	-
Access Time	8 ns	-	10 ns	10 ns	10 ns	8 ns	10 ns	8 ns	-
接口类型 Interface Type	Parallel	-	Parallel	Parallel	Parallel	-	Parallel	-	-
电源电压-最大 Supply Voltage - Max	3.63 V	-	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	-
电源电压-最小 Supply Voltage - Min	3.135 V	-	2.97 V	2.97 V	2.97 V	3.135 V	2.97 V	3.135 V	-
Supply Current - Max	210 mA	-	210 mA	210 mA	180 mA	210 mA	180 mA	210 mA	-
最小工作温度 Minimum Operating Temperature	0 C	-	- 40 C	- 40 C	0 C	0 C	0 C	0 C	-
最大工作温度 Maximum Operating Temperature	+ 70 C	-	+ 85 C	+ 85 C	+ 70 C	+ 70 C	+ 70 C	+ 70 C	-
安装风格 Mounting Style	SMD/SMT	-	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	-
封装 / 箱体 Package / Case	TQFP-100	-	TQFP-100	TQFP-100	PBGA-119	PBGA-119	TQFP-100	PBGA-119	-
系列 Packaging	Reel	-	Tube	Reel	Tube	Reel	Reel	Tray	-
数据速率 Data Rate	SDR	-	SDR	SDR	SDR	SDR	SDR	SDR	-
类型 Type	Asynchronous	-	Asynchronous	Asynchronous	Asynchronous	Asynchronous	Asynchronous	Asynchronous	-
Number of Ports	1	-	1	1	1	1	1	1	-
Moisture Sensitive	Yes	-	Yes	Yes	Yes	Yes	Yes	Yes	-
工厂包装数量 Factory Pack Quantity	800	-	72	800	84	1000	800	84	-

IS61LV12824-8TQ-TR

IS61LV12824-8TQ-TR在线购买

IS61LV12824-8TQ-TR概述

IS61LV12824-8TQ-TR规格参数

文档预览

IS61LV12824-8TQ-TR相似产品对比

推荐资源