IRF8304MPbF
l
RoHS Compliant and Halogen Free
l
Typical values (unless otherwise specified)
Low Profile (<0.7 mm)
V
DSS
V
GS
R
DS(on)
R
DS(on)
l
Dual Sided Cooling Compatible
30V max ±20V max 1.7mΩ@ 10V 2.4mΩ@ 4.5V
l
Ultra Low Package Inductance
l
Optimized for High Frequency Switching
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
l
Ideal for CPU Core DC-DC Converters
28nC
7.9nC 4.2nC
39nC
21nC
1.8V
l
Optimized for both Sync.FET and some Control FET
application
l
Low Conduction and Switching Losses
l
Compatible with existing Surface Mount Techniques
l
100% Rg tested
DirectFET
®
Power MOSFET
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MX
MP
DirectFET
®
ISOMETRIC
Description
The IRF8304MPbF combines the latest HEXFET
®
Power MOSFET Silicon technology with the advanced DirectFET
®
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET
®
package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
®
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8304MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF8304MPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Base Part number
IRF8304MPbF
Package Type
DirectFET MX
Parameter
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF8304MTRPbF
Max.
Units
V
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
6
Typical RDS(on) (mΩ)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
VGS, Gate-to-Source Voltage (V)
Ãg
h
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
10
20
ID= 22A
30
±20
28
22
170
220
190
22
VDS= 24V
VDS= 15V
VDS= 6.0V
A
mJ
A
5
4
3
2
1
0
0
5
10
T J = 25°C
ID = 28A
T J = 125°C
15
20
30
40
50
60
70
80
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.75mH, R
G
= 25Ω, I
AS
= 22A.
1
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IRF8304MPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
22
1.7
2.4
1.8
-6.1
–––
–––
–––
–––
–––
28
8.3
4.2
7.9
7.6
12.1
21
1.3
16
22
19
13
4700
960
420
–––
V
Conditions
V
GS
= 0V, I
D
= 250µA
––– mV/°C Reference to 25°C, I
D
= 1mA
2.2
mΩ V
GS
= 10V, I
D
= 28A
V
GS
= 4.5V, I
D
= 22A
3.2
V
DS
= V
GS
, I
D
= 100µA
2.35
V
––– mV/°C
1.0
µA V
DS
= 24V, V
GS
= 0V
i
i
150
100
-100
–––
42
–––
–––
–––
–––
–––
–––
2.2
–––
–––
–––
–––
–––
–––
–––
pF
nC
nA
S
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 22A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 22A
See Fig. 15
nC
Ω
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 22A
R
G
= 1.8Ω
See Fig. 17
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Ãi
ns
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.77
24
39
130
A
220
1.0
36
59
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 22A, V
GS
= 0V
T
J
= 25°C, I
F
= 22A
di/dt = 260A/µs
Ãg
i
Reverse Recovery Time
Reverse Recovery Charge
i
Notes:
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF8304MPbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
e
Power Dissipation
e
Power Dissipation
f
Parameter
Max.
2.8
1.8
100
270
-40 to + 150
Units
W
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
el
jl
kl
fl
Parameter
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.2
–––
Units
°C/W
eÃ
W/°C
Thermal Response ( Z thJA )
10
1
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
4
τ
A
Ri (°C/W)
1.3216
5.1963
21.489
17.005
τi
(sec)
0.000312
0.040534
1.0378
46
0.1
τ
1
τ
2
τ
3
τ
4
Ci=
τi/Ri
Ci=
τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
February 17, 2014
3
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IRF8304MPbF
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
1
10
2.3V
0.1
2.3V
≤
60µs PULSE WIDTH
0.01
0.1
1
Tj = 25°C
1
100
0.1
1
10
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 15V
≤60µs
PULSE WIDTH
100
T J = 150°C
T J = 25°C
T J = -40°C
Typical RDS(on) (Normalized)
Fig 5.
Typical Output Characteristics
2.0
ID = 28A
V GS = 10V
V GS = 4.5V
1.5
ID, Drain-to-Source Current (A)
10
1.0
1
0.1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
Fig 7.
Normalized On-Resistance vs. Temperature
7
6
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 8.0V
Vgs = 10V
T J = 25°C
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
C, Capacitance(pF)
10000
Ciss
5
4
3
2
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
1
0
50
100
150
200
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
4
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Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
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February 17, 2014
ID, Drain Current (A)
IRF8304MPbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 150°C
T J = 25°C
T J = -40°C
100
10
1msec
1
10msec
DC
T A = 25°C
T J = 150°C
10
1
VGS = 0V
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
0.1
Single Pulse
0.01
0.01
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
180
160
140
ID, Drain Current (A)
Fig11.
Maximum Safe Operating Area
3.0
2.5
120
100
80
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
2.0
ID = 100µA
ID = 150µA
ID = 1.0mA
ID = 1.0A
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
ID = 250µA
1.0
1.5
Fig 12.
Maximum Drain Current vs. Case Temperature
800
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
2.1A
2.8A
BOTTOM 22A
700
600
500
400
300
200
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
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