IRF6622PbF
IRF6622TRPbF
DirectFET Power MOSFET
l
l
l
l
l
l
l
l
l
PD - 97244
RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
V
DSS
Q
g
tot
V
GS
Q
gd
3.8nC
R
DS(on)
Q
gs2
1.6nC
R
DS(on)
Q
oss
7.7nC
25V max ±20V max 4.9mΩ@ 10V 6.8mΩ@ 4.5V
Q
rr
7.1nC
V
gs(th)
1.8V
11nC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
DirectFET ISOMETRIC
Description
The IRF6622PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6622PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-
ers that power high current loads such as the latest generation of microprocessors. The IRF6622PbF has been optimized for parameters that
are critical in synchronous buck converter’s ControlFET sockets.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
20
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
25
±20
15
12
59
120
13
12
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
2
4
6
8
10
12
VDS= 20V
VDS= 13V
A
mJ
A
ID= 12A
15
10
5
T J = 25°C
0
3
4
5
6
7
8
ID = 15A
VDS= 5.0V
T J = 125°C
9
10
14
VGS, Gate -to -Source Voltage (V)
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 1.
Typical On-Resistance Vs. Gate Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.18mH, R
G
= 25Ω, I
AS
= 12A.
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1
07/18/06
IRF6622PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
55
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
17
4.9
6.8
1.8
-5.9
–––
–––
–––
–––
–––
11
2.5
1.6
3.8
3.1
5.4
7.7
1.8
9.4
16
13
4.6
1450
380
210
–––
–––
6.3
8.9
2.35
–––
1.0
150
100
-100
–––
17
–––
–––
–––
–––
–––
–––
3.1
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
V
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 15A
i
V
GS
= 4.5V, I
D
= 12A
i
V
mV/°C
µA
nA
S
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 13V, I
D
= 12A
V
DS
= 13V
nC
V
GS
= 4.5V
I
D
= 12A
See Fig. 15
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
i
I
D
= 12A
Clamped Inductive Load
See Fig. 16 & 17
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
V
DS
= V
GS
, I
D
= 25µA
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
d
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
–––
10
7.1
120
1.0
15
11
V
ns
nC
Min.
–––
Typ. Max. Units
–––
2.7
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
i
T
J
= 25°C, I
F
= 12A
di/dt = 500A/µs
i
See Fig. 18
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
Notes:
2
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IRF6622PbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
2.2
1.4
34
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
em
km
lm
fm
Parameter
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
58
–––
–––
3.7
–––
Units
°C/W
eÃ
W/°C
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
R
5
R
5
τ
A
τ
1
τ
2
τ
3
τ
4
τ
5
τ
5
τ
A
Ri (°C/W)
1.620
2.141
22.289
20.046
11.914
τi
(sec)
0.000126
0.001354
0.375850
7.41
99
1
0.02
0.01
τ
J
Ci=
τi/Ri
Ci=
τi/Ri
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
0.01
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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IRF6622PbF
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
1
2.5V
10
2.5V
1
0.1
≤
60µs PULSE WIDTH
0.01
0.1
1
Tj = 25°C
10
100
1000
0.1
1
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
1000
Fig 4.
Typical Output Characteristics
1000
VDS = 15V
≤60µs
PULSE WIDTH
100
T J = 150°C
10
T J = 25°C
T J = -40°C
1
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 5.
Typical Output Characteristics
2.0
ID = 15A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current
(Α)
1.5
V GS = 10V
1.0
V GS = 4.5V
0.5
0.1
1
2
3
4
5
-60 -40 -20 0
20 40 60 80 100 120 140 160
Fig 6.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 7.
Normalized On-Resistance vs. Temperature
50
T J = 25°C
40
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
C, Capacitance(pF)
Ciss
1000
Coss
Crss
30
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
20
10
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
0
20
40
60
80
100
120
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance Vs.
Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6622PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
10
T J = 150°C
T J = 25°C
T J = -40°C
1
1
VGS = 0V
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.1
T A = 25°C
1msec
10msec
T J = 150°C
Single Pulse
0.01
0.01
0.10
1.00
10.00
100.00
Fig 10.
Typical Source-Drain Diode Forward Voltage
60
Typical VGS(th) Gate threshold Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig11.
Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
ID = 25µA
50
ID, Drain Current (A)
40
30
20
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
ID = 50µA
ID = 100µA
ID = 250µA
ID = 1mA
ID = 1.0A
Fig 12.
Maximum Drain Current vs. Case Temperature
60
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
3.7A
5.3A
BOTTOM 12A
50
40
30
20
10
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
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