Datasheet> 器件分类 > 存储> 存储> AS4C16M16S-6TAN

AS4C16M16S-6TAN: 产品描述Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54; 产品类别存储存储; 文件大小2MB，共54页; 制造商Alliance Memory; 标准

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AS4C16M16S-6TAN概述

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54

AS4C16M16S-6TAN规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
Objectid	1344604468
零件包装代码	TSOP2
包装说明	TSOP2,
针数	54
Reach Compliance Code	compliant
ECCN代码	EAR99
Samacsys Manufacturer	Alliance Memory
Samacsys Modified On	2022-03-10 09:06:57
访问模式	FOUR BANK PAGE BURST
最长访问时间	5.4 ns
其他特性	AUTO/SELF REFRESH
JESD-30 代码	R-PDSO-G54
JESD-609代码	e3/e6
长度	22.22 mm
内存密度	268435456 bit
内存集成电路类型	SYNCHRONOUS DRAM
内存宽度	16
功能数量	1
端口数量	1
端子数量	54
字数	16777216 words
字数代码	16000000
工作模式	SYNCHRONOUS
组织	16MX16
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	260
座面最大高度	1.2 mm
自我刷新	YES
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
端子面层	PURE MATTE TIN/TIN BISMUTH
端子形式	GULL WING
端子节距	0.8 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	40
宽度	10.16 mm

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AS4C16M16S

16M x 16 bit Synchronous DRAM (SDRAM)

Confidential

Features

Fast access time from clock: 5.4/5.4 ns

Fast clock rate: 166/143 MHz

Fully synchronous operation

Internal pipelined architecture

4M word x 16-bit x 4-bank

Programmable Mode registers

- CAS Latency: 2, or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: Sequential or Interleaved

- Burst stop function



Auto Refresh and Self Refresh



8192 refresh cycles/64ms



CKE power down mode



Single +3.3V power supply



Interface: LVTTL



Operating temperature range

- Commercial (0 ~ 70°C)

- Industrial (-40 ~ 85°C)

- Automotive (-40 ~ 105°C)



54-pin 400 mil plastic TSOP II package



54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package

All parts fully ROHS Compliant



Advanced (Rev. 1.4, Feb. /2012)

Overview

256Mb SDRAM is a high-speed CMOS

synchronous DRAM containing 256 Mbits. It is

internally configured as 4 Banks of 4M word x 16

DRAM with a synchronous interface (all signals are

registered on the positive edge of the clock signal,

CLK). Read and write accesses to the SDRAM are

burst oriented; accesses start at a selected location

and continue for a programmed number of locations in

a programmed sequence. Accesses begin with the

registration of a BankActivate command which is then

followed by a Read or Write command.

The SDRAM provides for programmable Read or

Write burst lengths of 1, 2, 4, 8, or full page, with a

burst termination option. An auto precharge function

may be enabled to provide a self-timed row precharge

that is initiated at the end of the burst sequence. The

refresh functions, either Auto or Self Refresh are easy

to use. By having a programmable mode register, the

system can choose the most suitable modes to

maximize its performance. These devices are well

suited for applications requiring high memory

bandwidth and particularly well suited to high

performance PC applications.

Table 1. Key Specifications

AS4C16M16S

tCK3

Clock Cycle time (min.)

tAC3

Access time from CLK (max.)

tRAS

Row Active time (min.)

tRC

Row Cycle time (min.)

Table 2. Ordering Information

-6/7

6/7 ns

5.4/5.4 ns

42/49 ns

60/63 ns

Part Number

Frequency

Package

AS4C16M16S-7TCN

143 MHz

54 pin TSOP II

AS4C16M16S-6TCN

166 MHz

54 pin TSOP II

AS4C16M16S-6TIN

166 MHz

54 pin TSOP II

AS4C16M16S-6BIN

166 MHz

54 ball TFBGA

AS4C16M16S-7BCN

143 MHz

54 ball TFBGA

AS4C16M16S-6TAN

166 MHz

54 pin TSOP II

T : indicates TSOP II package

B : indicates TFBGA package

N : indicates Pb free and Halogen free – ROHS compliant parts

C: Commercial I: Industrial A: Automotive temperatures

Confidential

Rev 3

Feb.

2014

AS4C16M16S-6TAN相似产品对比

	AS4C16M16S-6TAN	AS4C16M16S-7BCNTR	AS4C16M16S-6TIN	AS4C16M16S-6TANTR	AS4C16M16S-6TCNTR	AS4C16M16S-6TINTR	AS4C16M16S-6TCN	AS4C16M16S-7TCN	AS4C16M16S-6BIN
描述	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-54	DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54	DRAM 256M, 3.3V, 166Mhz 16M x 16 SDRAM	DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM	DRAM 256M SDRAM 16M X 16 166MHz	DRAM 256Mb, 3.3V, 143Mhz 16M x 16 SDRAM	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, HALOGEN AND LEAD FREE, TFBGA-54
是否无铅	不含铅	不含铅	不含铅	不含铅	不含铅	-	不含铅	不含铅	-
是否Rohs认证	符合	符合	符合	符合	符合	-	符合	符合	符合
零件包装代码	TSOP2	BGA	TSOP2	TSOP2	TSOP2	-	TSOP2	TSOP2	-
包装说明	TSOP2,	TFBGA,	TSOP2, TSOP54,.46,32	TSOP2,	TSOP2,	-	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TFBGA,
针数	54	54	54	54	54	-	54	54	-
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	-	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	-	5.4 ns	5.4 ns	5.4 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 代码	R-PDSO-G54	S-PBGA-B54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	-	R-PDSO-G54	R-PDSO-G54	S-PBGA-B54
JESD-609代码	e3/e6	-	e3/e6	e3/e6	e3/e6	-	e3/e6	e3/e6	-
长度	22.22 mm	8 mm	22.22 mm	22.22 mm	22.22 mm	-	22.22 mm	22.22 mm	8 mm
内存密度	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	-	268435456 bit	268435456 bit	268435456 bit
内存集成电路类型	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	-	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
内存宽度	16	16	16	16	16	-	16	16	16
功能数量	1	1	1	1	1	-	1	1	1
端口数量	1	1	1	1	1	-	1	1	1
端子数量	54	54	54	54	54	-	54	54	54
字数	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	-	16777216 words	16777216 words	16777216 words
字数代码	16000000	16000000	16000000	16000000	16000000	-	16000000	16000000	16000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
组织	16MX16	16MX16	16MX16	16MX16	16MX16	-	16MX16	16MX16	16MX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TFBGA	TSOP2	TSOP2	TSOP2	-	TSOP2	TSOP2	TFBGA
封装形状	RECTANGULAR	SQUARE	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	SQUARE
封装形式	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）	260	NOT SPECIFIED	260	260	260	-	260	260	-
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	-	1.2 mm	1.2 mm	1.2 mm
自我刷新	YES	YES	YES	YES	YES	-	YES	YES	YES
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	-	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	-	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	-	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	-	CMOS	CMOS	CMOS
端子面层	PURE MATTE TIN/TIN BISMUTH	-	PURE MATTE TIN/TIN BISMUTH	PURE MATTE TIN/TIN BISMUTH	PURE MATTE TIN/TIN BISMUTH	-	PURE MATTE TIN/TIN BISMUTH	PURE MATTE TIN/TIN BISMUTH	-
端子形式	GULL WING	BALL	GULL WING	GULL WING	GULL WING	-	GULL WING	GULL WING	BALL
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	-	0.8 mm	0.8 mm	0.8 mm
端子位置	DUAL	BOTTOM	DUAL	DUAL	DUAL	-	DUAL	DUAL	BOTTOM
处于峰值回流温度下的最长时间	40	NOT SPECIFIED	40	40	40	-	40	40	-
宽度	10.16 mm	8 mm	10.16 mm	10.16 mm	10.16 mm	-	10.16 mm	10.16 mm	8 mm
最高工作温度	-	70 °C	85 °C	-	70 °C	-	70 °C	70 °C	85 °C
温度等级	-	COMMERCIAL	INDUSTRIAL	-	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	INDUSTRIAL

AS4C16M16S-6TAN

AS4C16M16S-6TAN在线购买

AS4C16M16S-6TAN概述

AS4C16M16S-6TAN规格参数

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