Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
SWITCHING CHARACTERISTICS
(Resistive Load)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
(Note 1)
SECOND BREAKDOWN
OFF CHARACTERISTICS
(Note 1)
ELECTRICAL CHARACTERISTICS
Fall Time
Storage Time
Turn-on Time
Current Gain
−
Bandwidth Product
(V
CE
= 15 V, I
C
= 2 A, f = 4 MHz)
Base−Emitter Saturation Voltage
(I
C
= 25 A, I
B
= 3 A)
Collector−Emitter Saturation Voltage
(I
C
= 12 A, I
B
= 1.2 A)
(I
C
= 25 A, I
B
= 3 A)
DC Current Gain
(I
C
= 12 A, V
CE
= 2 V)
(I
C
= 25 A, V
CE
= 4 V)
Second Breakdown Collector Current with base forward biased
(V
CE
= 20 V, t = 1 s)
(V
CE
= 140 V, t = 1 s)
Emitter−Cutoff Current
(V
EB
= 5 V)
Emitter−Base Reverse Voltage
(I
E
= 50 mA)
Collector−Emitter Cutoff Current
(V
CE
= 160 V)
Collector Cutoff Current at Reverse Bias:
(V
CE
= 250 V, V
BE
=
−1.5
V)(T
C
= 25_C unless otherwise noted)
(V
CE
= 250 V, V
BE
=
−1.5
V, T
C
= 125_C)
Collector−Emitter Sustaining Voltage
(I
C
= 200 mA, I
B
= 0, L = 25 mH)
Characteristic
0.2
DERATING FACTOR
0.4
0.6
0.8
1.0
0
(I
C
= 25 A, I
B1
= I
B2
= 3 A,
V
CC
= 100 V, R
C
= 4
W)
40
Figure 1. Power Derating
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80
120
T
C
, TEMPERATURE (°C)
BUV21
2
160
t
on
f
T
t
s
t
f
V
CEO(sus)
Symbol
V
CE(sat)
V
BE(sat)
V
EBO
I
CEO
I
EBO
I
CEX
h
FE
I
S/b
200
12
0.15
Min
200
8.0
20
10
7
3.0
12.0
Max
0.4
1.8
1.0
1.5
0.6
1.5
1.0
3.0
60
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Adc
Vdc
ms
V
BUV21
40
IC, COLLECTOR CURRENT (A)
10
1
0.1
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
C
= 25_C, T
J(pk)
is
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
1
10
100 200
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 2. Active Region Safe Operating Area
2.0
I
C
/I
B
= 8
1.6
V, VOLTAGE (V)
40
50
V
CE
= 5 V
1.2
V
BE
30
0.8
20
0.4
V
CE
0
1
10
10
0
100
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. “On” Voltages
Figure 4. DC Current Gain
3.0
2.0
t, TIME (
μ
s)
1.0
V
CE
= 100 V
I
C
/I
B1
= 8
I
B1
= I
B2
R
C
t
S
I
B2
I
B1
t
on
t
F
0
5
10
15
I
C
, COLLECTOR CURRENT (A)
20
25
R
C
−
R
B
: Non inductive resistances
V
CC
10,000
mF
0.4
0.3
0.2
R
B
V
CC
= 100 V
R
C
= 4
W
R
B
= 2.2
W
Figure 5. Resistive Switching Performance
Figure 6. Switching Times Test Circuit
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3
BUV21
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 197A−05
ISSUE K
A
N
C
E
D
2 PL
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
−T−
K
M
SEATING
PLANE
0.30 (0.012)
T Q
M
Y
M
V
2
U
L
G
−Y−
B
H
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.530 REF
0.990 1.050
0.250 0.335
0.057 0.063
0.060 0.070
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
0.760 0.830
0.151 0.165
1.187 BSC
0.131 0.188
MILLIMETERS
MIN MAX
38.86 REF
25.15 26.67
6.35
8.51
1.45
1.60
1.53
1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
19.31 21.08
3.84
4.19
30.15 BSC
3.33
4.77
1
−Q−
0.25 (0.010)
M
T Y
M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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