HMC408LP3
/
408LP3E
v03.0705
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
5
AMPLIFIERS - SMT
Typical Applications
The HMC408LP3 / HMC408LP3E is ideal for:
• 802.11a & HiperLAN WLAN
• UNII & Point-to-Point / Multi-Point Radios
• Access Point Radios
Features
Gain: 20 dB
Saturated Power: +32.5 dBm @ 27% PAE
Single Supply Voltage: +5.0 V
Power Down Capability
3x3 mm Leadless SMT Package
Functional Diagram
General Description
The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz
high efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) Power Amplifier MMICs which offer
+30 dBm P1dB. The amplifier provides 20 dB of gain,
+32.5 dBm of saturated power, and 27% PAE from a
+5.0V supply voltage. The input is internally matched
to 50 Ohms while the output requires a minimum
of external components. Vpd can be used for full
power down or RF output power/current control. The
amplifier is packaged in a low cost, 3x3 mm leadless
surface mount package with an exposed base for
improved RF and thermal performance.
Electrical Specifications,
T
A
= +25° C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss*
Output Power for 1 dB Compression
(P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Harmonics, Pout= 30 dBm, F= 5.8 GHz
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd= 0V/5V
Vpd= 5V
tOn, tOff
2 fo
3 fo
40
Icq= 750 mA
Icq= 500 mA
27
17
Min.
Typ.
5.7 - 5.9
20
0.045
8
14
30
27
32.5
43
-50
-90
6
0.002 / 750
14
50
36
24
0.055
17
Max.
Min.
Typ.
5.1 - 5.9
20
0.045
8
6
27
23
31
39
-50
-90
6
0.002 / 750
14
50
0.055
Max.
Units
GHz
dB
dB/°C
dB
dB
dBm
dBm
dBm
dBc
dBc
dB
mA
mA
ns
* Output match optimized for 5.7 - 5.9 GHz operation. See Application Circuit herein.
5 - 158
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC408LP3
/
408LP3E
v03.0705
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
Broadband Gain & Return Loss
25
20
15
RESPONSE (dB)
10
5
0
-5
-10
-15
-20
-25
3
4
5
6
7
8
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
26
24
22
20
18
16
14
12
10
8
6
4
2
0
4.8
5
AMPLIFIERS - SMT
GAIN (dB)
+25 C
+85 C
-40 C
5
5.2
5.4
5.6
5.8
6
6.2
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature*
0
+25 C
+85 C
-40 C
-4
RETURN LOSS (dB)
RETURN LOSS (dB)
5.8
6
6.2
-5
-8
-10
-12
+25 C
-15
+85 C
-40 C
-16
-20
4.8
5
5.2
5.4
5.6
-20
4.8
5
5.2
5.4
5.6
5.8
6
6.2
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
36
33
30
P1dB (dBm)
Psat vs. Temperature
36
33
30
Psat (dBm)
27
24
21
18
15
12
4.8
+25 C
+85 C
-40 C
27
24
21
18
15
12
4.8
+25 C
+85 C
-40 C
5
5.2
5.4
5.6
5.8
6
6.2
5
5.2
5.4
5.6
5.8
6
6.2
FREQUENCY (GHz)
FREQUENCY (GHz)
* Output match optimized for 5.7 - 5.9 GHz.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 15
HMC408LP3
/
408LP3E
v03.0705
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
5
AMPLIFIERS - SMT
Power Compression @ 5.8 GHz
36
Pout (dBm), GAIN (dB), PAE (%)
33
30
27
24
21
18
15
12
9
6
3
0
-10 -8 -6 -4 -2
0
2
4
6
8 10 12 14 16 18 20
Pout (dBm)
Gain (dB)
PAE (%)
Output IP3 vs. Temperature
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
4.8
OIP3 (dBm)
+25 C
+85 C
-40 C
5
5.2
5.4
5.6
5.8
6
6.2
INPUT POWER (dBm)
FREQUENCY (GHz)
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
7
6
5
4
3
2
1
0
4.8
5
5.2
5.4
+25 C
+85 C
-40 C
Gain & Power vs.
Supply Voltage @ 5.8 GHz
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
4.75
GAIN (dB), P1dB (dBm), Psat (dBm)
Gain
P1dB
Psat
5.6
5.8
6
6.2
5
Vcc Supply Voltage (Vdc)
5.25
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
4.8
Reverse Isolation
Power Down Isolation
Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.8 GHz
36
GAIN (dB), P1dB (dBm), Psat (dBm)
33
30
27
24
21
18
15
12
Gain
P1dB
Psat
Icq
800
700
600
500
Icq (mA)
400
300
200
100
0
3
3.2
3.4
3.6
3.8
4
4.2
4.4
4.6
4.8
5
Vpd (Vdc)
5
5.2
5.4
5.6
5.8
6
6.2
FREQUENCY (GHz)
5 - 160
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC408LP3
/
408LP3E
v03.0705
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
Typical Supply Current
vs. Vs= Vcc1 + Vcc2
Absolute Maximum Ratings
Collector Bias Voltage (Vcc1, Vcc2)
Control Voltage (Vpd)
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)
Junction Temperature
Continuous Pdiss (T = 85
°C)
(derate 72.5 mW/°C above 85
°C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
+5.5 Vdc
+20 dBm
150
°C
4.71 W
13.8
°C/W
-65 to +150
°C
-40 to +85
°C
5
725
750
4.75
5.0
5.25
780
Note: Amplifier will operate over full voltage range shown above
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
HMC408LP3
HMC408LP3E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
408
XXXX
408
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 16
AMPLIFIERS - SMT
Vs (V)
Icq (mA)
HMC408LP3
/
408LP3E
v03.0705
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
5
AMPLIFIERS - SMT
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
Vpd
Power control pin. For maximum power, this pin should be
connected to 5.0V. A higher voltage is not recommended.
For lower idle current, this voltage can be reduced.
2, 4, 5 - 8, 12,
13, 15
N/C
No Connection
3
RFIN
This pin AC coupled and matched to 50 Ohms from
5.1 - 5.9 GHz.
9, 10, 11
RFOUT
RF output and DC bias for the output stage.
14
Vcc2
Power supply voltage for the second amplifier stage. Exter-
nal bypass capacitors and pull up choke are required as
shown in the application schematic.
16
Vcc1
Power supply voltage for the first amplifier stage. External
bypass capacitors are required as shown in the application
schematic.
Ground: Backside of package has exposed metal ground
slug that must be connected to ground thru a short path.
Vias under the device are required.
GND
5 - 162
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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