RN1414_07,RN1414_07 pdf中文资料,RN1414_07引脚图,RN1414

RN1414_07: 产品描述Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications; 文件大小180KB，共8页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1414_07概述

Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1414_07相似产品对比

	RN1414_07	RN1414	RN1415	RN1416	RN1418	RN1417
描述	Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
零件包装代码	-	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23
包装说明	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
针数	-	3	3	3	3	3
Reach Compliance Code	-	unknow	unknow	unknow	unknow	unknow
ECCN代码	-	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	-	BUILT-IN BIAS RESISTOR RATIO IS 10	BUILT-IN BIAS RESISTOR RATIO IS 4.55	BUILT-IN BIAS RESISTOR RATIO IS 2.13	BUILT-IN BIAS RESISTOR RATIO IS 0.21	BUILT-IN BIAS RESISTOR RATIO IS 0.47
最大集电极电流 (IC)	-	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
基于收集器的最大容量	-	6 pF	6 pF	6 pF	6 pF	6 pF
集电极-发射极最大电压	-	50 V	50 V	50 V	50 V	50 V
配置	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	-	50	50	50	50	30
JEDEC-95代码	-	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB
JESD-30 代码	-	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
元件数量	-	1	1	1	1	1
端子数量	-	3	3	3	3	3
最高工作温度	-	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	-	NPN	NPN	NPN	NPN	NPN
最大功率耗散 (Abs)	-	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W
认证状态	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	-	YES	YES	YES	YES	YES
端子形式	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	-	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	-	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	-	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
VCEsat-Max	-	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V
是否Rohs认证	-	-	符合	符合	符合	符合
峰值回流温度（摄氏度）	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
处于峰值回流温度下的最长时间	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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