Product Bulletin OPB755N
June 1996
Reflective Object Sensor
Type OPB755N
Features
•
High contrast ratio 1000 to 1 minimum
•
12.0"
±
0.5" min. UL#1429 26 AWG
wire leads terminated into an AMP
#640442-5 connector
12.0 ± 0.5
(304.8 ± 12.7)
•
Low cost plastic housing
Description
The OPB755N reflective assembly
features a phototransistor output
designed to decrease low-level light gain
while not affecting the high-level light
gain. Available with two mounting tabs as
OPB755T.
Available with PC Board mountable
leads as OPB750 series. Photologic
®
output sensors available in
OPB760/OPB770 series.
Absolute Maximum Ratings
(T
A
= 25
o
C unless otherwise noted)
Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . . -40
o
C to +80
o
C
Input Diode
Forward DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak Forward Current (1
µs
pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . 3.0 A
Reverse DC Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Output Phototransistor
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Collector DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Notes:
(1) Derate Linearly 1.82 mW/
o
C above 25
o
C.
(2) All parameters tested using pulse technique.
(3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in
chlorinated hydrocarbons and ketones.
(4) Photocurrent is measured using an Eastman Kodak Neutral White test card having a 90%
diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog #1257795.
(5) I
C(OFF)
is the photocurrent measured with current to the input diode and a 5% reflecting
surface.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
11-46
(972) 323-2200
Fax (972) 323-2396
Type OPB755N
Electrical Characteristics
(T
A
= 25
o
C unless otherwise noted)
SYMBOL
Input Diode
V
F
I
R
V
(BR)CEO
I
CEO
PARAMETER
MIN MAX UNITS
1.80
100
30
100
0.40
500
375
250
250
V
µA
V
nA
V
µA
µA
µA
nA
I
F
= 40 mA
V
R
= 2.0 V
I
C
= 100
µA
TEST CONDITIONS
Forward Voltage
Reverse Current
Collector-Emitter Breakdown Voltage
Collector Dark Current
Saturation Voltage
On-State Collector Current
Output Phototransistor
V
CE
= 10 V, I
F
= 0, H = 0
I
C
= 150
µA,
I
F
= 30 mA, d = 0.22”
(4)
V
CE
= 5 V, I
F
= 30 mA, d = 0.08”
(4)
V
CE
= 5 V, I
F
= 30 mA, d = 0.15”
(4)
V
CE
= 5 V, I
F
= 30 mA, d = 0.22”
Coupled
V
CE(SAT)
I
C(ON)
Off-State Collector Current
I
C(OFF)
I
F
= 30 mA, V
CE
= 5 V,
(5)
d = 0.08” 0.15” 0.22”
,
,
Typical Performance Curves
Normalized Collector Current vs.
Object Distance
Normalized to d = .150"
I
F
= 30 mA
V
CE
= 5 V
Average
Normalized Ouput Current vs.
Forward Current
Normalized to I
F
= 30 mA
V
CE
= 5 V
+2σ
Average
-2σ
+2σ
-2σ
Distance to Reflective Surface - Inches
Forward Current - mA
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972) 323-2200
Fax (972) 323-2396
11-47
ARM技术
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