Data Sheet No. PD10023E
Series PVD10
Microelectronic Power IC
BOSFET
®
Photovoltaic Relay
Single-Pole, 160mA, 0-100V DC
General Description
The Photovoltaic DC Relay (PVD) is a single-pole,
normally open solid state replacement for electro-
mechanical relays used for general purpose switch-
ing of analog signals. It utilizes as an output switch a
unique bidirectional (AC or DC) MOSFET power IC
termed a BOSFET. The BOSFET is controlled by a
photovoltaic generator of novel construction, which
is energized by radiation from a dielectrically iso-
lated light emitting diode (LED).
The PVD overcomes the limitations of both conven-
tional and reed electromechanical relays by offering
the solid state advantages of long life, high operat-
ing speed, low pick-up power, bounce-free opera-
tion, low thermal voltages and miniaturization. These
advantages allow product improvement and design
innovations in many applications such as process
control, multiplexing, telecommunications, automatic
test equipment and data acquisition.
The PVD can switch analog signals from thermo-
couple level to 100 volts peak DC. Signal frequen-
cies into the RF range are easily controlled and
switching rates up to 18kHz are achievable. The
extremely small thermally generated offset voltages
allow increased measurement accuracies.
Unique silicon technology developed by International
Rectifier forms the heart of the PVD. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power IC
chip has input circuitry for fast turn-off and gate
protection functions. This section of the BOSFET chip
utilizes both bipolar and MOS technology to form
NPN transistors, P-channel MOSFETs, resistors,
diodes and capacitors.
The photovoltaic generator similarly utilizes a unique
International Rectifier alloyed multijunction structure.
The excellent current conversion efficiency of this
technique results in the very fast response of the
PVD microelectronic power IC relay.
This advanced semiconductor technology has cre-
ated a radically new control device. Designers can
now develop switching systems to new standards of
electrical performance and mechanical compactness.
Features
BOSFET Power IC
10
10
Operations
25µsec Operating Time
3 milliwatts Pick-Up Power
1000V/µsec dv/dt
Bounce-Free
8-pin DIP Package
-40°C to 85°C
UL recognized
s
s
s
s
s
s
s
s
s
Part Identification
Part Number
PVD1052
0 – 100V
PVD1054
5 mA
10
10
Ohms
Operating
Voltage (DC)
Sensitivity
Off-State
Resistance
10
8
Ohms
(BOSFET is a trademark of International Rectifier)
Series PVD10
Electrical Specifications
(-40°C
≤
T
A
≤
+85°C unless otherwise specified)
INPUT CHARACTERISTICS
Minimum Control Current
(see figures 1 and 2)
For 80mA Continuous Load Current
For 130mA Continuous Load Current
For 50mA Continuous Load Current
Maximum Control Current for Off-State Resistance at 25°C
Control Current Range (Caution: current limit input LED. See figure 6)
Maximum Reverse Voltage
PVD1052
2.0
5.0
5.0
10
PVD1054
Units
DC
mA@25°C
mA@40°C
mA@80°C
µA(DC)
mA(DC)
V(DC)
2.0 to 25
7.0
OUTPUT CHARACTERISTICS
Operating Voltage Range
Maxiumum Load Current 40°C (see figures 1and 2)
Response Time @25°C (see figures 7 and 8)
Max. T(on) @ 12mA Control, 50 mA Load, 50 VDC, 0 to 90%
Max. T(off) @ 12mA Control, 50 mA Load, 50 VDC, 100% to 10%
Max. On-state Resistance 25°C
(Pulsed) (fig. 4) 50 mA Load, 5mA Control
Min. Off-state Resistance 25°C @ 80 VDC (see figure 5)
Max. Thermal Offset Voltage @ 5.0mA Control
Min. Off-State dv/dt
Output Capacitance
PVD1052
160
PVD1054
Units
V
(RMS)
mA
(DC)
µs
µs
Ω
Ω
µvolts
V/µs
pF @ 50VDC
0 to ± 100
25
15
8.0
10
8
0.2
1000
8.0
10
10
GENERAL CHARACTERISTICS (PVD1052 and PVD1054)
Dielectric Strength: Input-Output
Insulation Resistance: Input-Output @ 90V
DC
Maximum Capacitance: Input-Output
Max. Pin Soldering Temperature
(1.6mm below seating plane, 10 seconds max.)
Ambient Temperature Range:
Operating
Storage
2500
10
12
@ 25°C - 50% RH
1.0
+260
-40 to +85
-40 to +100
Units
V
RMS
Ω
pF
°C
2
嵌入式系统
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