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Data Sheet No. PD10023E

Series PVD10

Microelectronic Power IC

BOSFET

®

Photovoltaic Relay

Single-Pole, 160mA, 0-100V DC

General Description

The Photovoltaic DC Relay (PVD) is a single-pole,

normally open solid state replacement for electro-

mechanical relays used for general purpose switch-

ing of analog signals. It utilizes as an output switch a

unique bidirectional (AC or DC) MOSFET power IC

termed a BOSFET. The BOSFET is controlled by a

photovoltaic generator of novel construction, which

is energized by radiation from a dielectrically iso-

lated light emitting diode (LED).

The PVD overcomes the limitations of both conven-

tional and reed electromechanical relays by offering

the solid state advantages of long life, high operat-

ing speed, low pick-up power, bounce-free opera-

tion, low thermal voltages and miniaturization. These

advantages allow product improvement and design

innovations in many applications such as process

control, multiplexing, telecommunications, automatic

test equipment and data acquisition.

The PVD can switch analog signals from thermo-

couple level to 100 volts peak DC. Signal frequen-

cies into the RF range are easily controlled and

switching rates up to 18kHz are achievable. The

extremely small thermally generated offset voltages

allow increased measurement accuracies.

Unique silicon technology developed by International

Rectifier forms the heart of the PVD. The monolithic

BOSFET contains a bidirectional N-channel power

MOSFET output structure. In addition, this power IC

chip has input circuitry for fast turn-off and gate

protection functions. This section of the BOSFET chip

utilizes both bipolar and MOS technology to form

NPN transistors, P-channel MOSFETs, resistors,

diodes and capacitors.

The photovoltaic generator similarly utilizes a unique

International Rectifier alloyed multijunction structure.

The excellent current conversion efficiency of this

technique results in the very fast response of the

PVD microelectronic power IC relay.

This advanced semiconductor technology has cre-

ated a radically new control device. Designers can

now develop switching systems to new standards of

electrical performance and mechanical compactness.

Features

BOSFET Power IC

10

Operations

25µsec Operating Time

3 milliwatts Pick-Up Power

1000V/µsec dv/dt

Bounce-Free

8-pin DIP Package

-40°C to 85°C

UL recognized

s

Part Identification

Part Number

PVD1052

0 – 100V

PVD1054

5 mA

10

Ohms

Operating

Voltage (DC)

Sensitivity

Off-State

Resistance

10

8

Ohms

(BOSFET is a trademark of International Rectifier)

Series PVD10

Electrical Specifications

(-40°C

≤

T

A

≤

+85°C unless otherwise specified)

INPUT CHARACTERISTICS

Minimum Control Current

(see figures 1 and 2)

For 80mA Continuous Load Current

For 130mA Continuous Load Current

For 50mA Continuous Load Current

Maximum Control Current for Off-State Resistance at 25°C

Control Current Range (Caution: current limit input LED. See figure 6)

Maximum Reverse Voltage

PVD1052

2.0

5.0

10

PVD1054

Units

DC

mA@25°C

mA@40°C

mA@80°C

µA(DC)

mA(DC)

V(DC)

2.0 to 25

7.0

OUTPUT CHARACTERISTICS

Operating Voltage Range

Maxiumum Load Current 40°C (see figures 1and 2)

Response Time @25°C (see figures 7 and 8)

Max. T(on) @ 12mA Control, 50 mA Load, 50 VDC, 0 to 90%

Max. T(off) @ 12mA Control, 50 mA Load, 50 VDC, 100% to 10%

Max. On-state Resistance 25°C

(Pulsed) (fig. 4) 50 mA Load, 5mA Control

Min. Off-state Resistance 25°C @ 80 VDC (see figure 5)

Max. Thermal Offset Voltage @ 5.0mA Control

Min. Off-State dv/dt

Output Capacitance

PVD1052

160

PVD1054

Units

V

(RMS)

mA

(DC)

µs

Ω

µvolts

V/µs

pF @ 50VDC

0 to ± 100

25

15

8.0

10

8

0.2

1000

8.0

10

GENERAL CHARACTERISTICS (PVD1052 and PVD1054)

Dielectric Strength: Input-Output

Insulation Resistance: Input-Output @ 90V

DC

Maximum Capacitance: Input-Output

Max. Pin Soldering Temperature

(1.6mm below seating plane, 10 seconds max.)

Ambient Temperature Range:

Operating

Storage

2500

10

12

@ 25°C - 50% RH

1.0

+260

-40 to +85

-40 to +100

Units

V

RMS

Ω

pF

°C

2

Series PVD10

Max. Load Current mA

Ambient Temperature (°C)

Figure 1. Current Derating Curves

ILED (mA)

Figure 2. Typical Control Current Requirements

Load Current (mA)

VDS (Volts)

Figure 3.Typical On Characteristics

Input Current (mA)

LED Forward Voltage Drop (Volts DC)

Figure 4. Typical On-Resistance

3

Series PVD10

Input Current (mA)

IDOff/IDOff 25°C

Ambient Temperature (°C)

Figure 5. Normalized Off-State Leakage

LED Forward Voltage Drop (Volts DC)

Figure 6. Input Characteristics

(Current Controlled)

ILED (mA)

Delay Time (microseconds)

Figure 7.Typical Delay Times

Figure 8. Delay Time Definitions

4

Series PVD10

Typical Capacitance (picofarads)

VDD Drain to Drain Voltage

Figure 9. Typical Output Capacitance

Wiring Diagram

5

PVD10

PVD10概述

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