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70T633S12DDGI

产品描述Dual-Port SRAM, 512KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HIEGHT, GREEN, TQFP-144
产品类别存储    存储   
文件大小221KB,共27页
制造商IDT (Integrated Device Technology)
标准
下载文档 详细参数 选型对比 全文预览

70T633S12DDGI概述

Dual-Port SRAM, 512KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HIEGHT, GREEN, TQFP-144

70T633S12DDGI规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称IDT (Integrated Device Technology)
零件包装代码QFP
包装说明LFQFP, QFP144,.87SQ,20
针数144
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间12 ns
I/O 类型COMMON
JESD-30 代码S-PQFP-G144
JESD-609代码e3
长度20 mm
内存密度9437184 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度18
功能数量1
端口数量2
端子数量144
字数524288 words
字数代码512000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织512KX18
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LFQFP
封装等效代码QFP144,.87SQ,20
封装形状SQUARE
封装形式FLATPACK, LOW PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)260
电源2.5,2.5/3.3 V
认证状态Not Qualified
座面最大高度1.6 mm
最大待机电流0.02 A
最小待机电流2.4 V
最大压摆率0.395 mA
最大供电电压 (Vsup)2.6 V
最小供电电压 (Vsup)2.4 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Matte Tin (Sn)
端子形式GULL WING
端子节距0.5 mm
端子位置QUAD
处于峰值回流温度下的最长时间30
宽度20 mm
Base Number Matches1

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Features
HIGH-SPEED 2.5V
512/256K x 18
ASYNCHRONOUS DUAL-PORT
STATIC RAM
WITH 3.3V 0R 2.5V INTERFACE
IDT70T633/1S
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 8/10/12/15ns (max.)
– Industrial: 10/12ns (max.)
RapidWrite Mode simplifies high-speed consecutive write
cycles
Dual chip enables allow for depth expansion without
external logic
IDT70T633/1 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
Functional Block Diagram
UB
L
LB
L
Full hardware support of semaphore signaling between
ports on-chip
On-chip port arbitration logic
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Sleep Mode Inputs on both ports
Supports JTAG features compliant to IEEE 1149.1 in
BGA-208 and BGA-256 packages
Single 2.5V (±100mV) power supply for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 256-ball Ball Grid Array, 144-pin Thin Quad
Flatpack and 208-ball fine pitch Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
UB
R
LB
R
R/
W
L
B
E
0
L
B
E
1
L
B
E
1
R
B
E
0
R
R/
W
R
CE
0L
CE
1L
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
512/256K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
A
18L
(1)
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
18R
(1)
A
0R
TDI
OE
L
CE
0L
CE
1L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
CE
0R
CE
1R
TDO
JTAG
TCK
TMS
TRST
R/W
L
R/W
R
BUSY
L(2,3)
SEM
L
INT
L(3)
ZZ
(4)
(4)
ZZ
L
ZZ
R
NOTES:
CONTROL
LOGIC
1. Address A
18
x is a NC for IDT70T631.
2.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
3
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INTx,
M/S and the
sleep mode pins themselves (ZZx) are not affected during sleep mode.
BUSY
R(2,3)
M/S
SEM
R
INT
R(3)
5670 drw 01
JANUARY 2009
DSC-5670/6
1
©2009 Integrated Device Technology, Inc.

70T633S12DDGI相似产品对比

70T633S12DDGI 70T633S12DDG 70T631S12DDGI 70T633S15DDG 70T631S15DDG 70T631S12DDG
描述 Dual-Port SRAM, 512KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HIEGHT, GREEN, TQFP-144 Dual-Port SRAM, 512KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HIEGHT, GREEN, TQFP-144 Dual-Port SRAM, 256KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HIEGHT, GREEN, TQFP-144 Dual-Port SRAM, 512KX18, 15ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HIEGHT, GREEN, TQFP-144 Dual-Port SRAM, 256KX18, 15ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HIEGHT, GREEN, TQFP-144 Dual-Port SRAM, 256KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HIEGHT, GREEN, TQFP-144
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 符合
零件包装代码 QFP QFP QFP QFP QFP QFP
包装说明 LFQFP, QFP144,.87SQ,20 LFQFP, QFP144,.87SQ,20 LFQFP, QFP144,.87SQ,20 LFQFP, QFP144,.87SQ,20 LFQFP, QFP144,.87SQ,20 LFQFP, QFP144,.87SQ,20
针数 144 144 144 144 144 144
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 12 ns 12 ns 12 ns 15 ns 15 ns 12 ns
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 S-PQFP-G144 S-PQFP-G144 S-PQFP-G144 S-PQFP-G144 S-PQFP-G144 S-PQFP-G144
JESD-609代码 e3 e3 e3 e3 e3 e3
长度 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm
内存密度 9437184 bit 9437184 bit 4718592 bit 9437184 bit 4718592 bit 4718592 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 18 18 18 18 18 18
功能数量 1 1 1 1 1 1
端口数量 2 2 2 2 2 2
端子数量 144 144 144 144 144 144
字数 524288 words 524288 words 262144 words 524288 words 262144 words 262144 words
字数代码 512000 512000 256000 512000 256000 256000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 70 °C 85 °C 70 °C 70 °C 70 °C
组织 512KX18 512KX18 256KX18 512KX18 256KX18 256KX18
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LFQFP LFQFP LFQFP LFQFP LFQFP LFQFP
封装等效代码 QFP144,.87SQ,20 QFP144,.87SQ,20 QFP144,.87SQ,20 QFP144,.87SQ,20 QFP144,.87SQ,20 QFP144,.87SQ,20
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 260 260 260 260 260
电源 2.5,2.5/3.3 V 2.5,2.5/3.3 V 2.5,2.5/3.3 V 2.5,2.5/3.3 V 2.5,2.5/3.3 V 2.5,2.5/3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm
最大待机电流 0.02 A 0.01 A 0.02 A 0.01 A 0.01 A 0.01 A
最小待机电流 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V
最大压摆率 0.395 mA 0.355 mA 0.395 mA 0.305 mA 0.305 mA 0.355 mA
最大供电电压 (Vsup) 2.6 V 2.6 V 2.6 V 2.6 V 2.6 V 2.6 V
最小供电电压 (Vsup) 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 QUAD QUAD QUAD QUAD QUAD QUAD
处于峰值回流温度下的最长时间 30 30 30 30 30 30
宽度 20 mm 20 mm 20 mm 20 mm 20 mm 20 mm
Base Number Matches 1 1 1 1 1 1
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) - IDT (Integrated Device Technology)
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