DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3230
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK3230 is suitable for converter of ECM.
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05
0.1
+0.1
–0.05
FEATURES
•
Compact package
•
High forward transfer admittance
1000
µ
S TYP. (I
DSS
= 100
µ
A)
1600
µ
S TYP. (I
DSS
= 200
µ
A)
•
Includes diode and high resistance at G - S
1.0
1.6 ± 0.1
0.8 ± 0.1
G
D
S
ORDERING INFORMATION
2SK3230
SC-89 (TUSM)
0.5 ± 0.05
1.6 ± 0.1
PART NUMBER
PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Notes 1.
V
GS
= –1.0 V
2.
Mounted on ceramic substrate of 3.0 cm x 0.64 mm
Remark
2
Note2
Note1
0.2
+0.1
–0
V
DSX
V
GDO
I
D
I
G
P
T
T
j
T
stg
20
–20
10
10
200
125
–55 to +125
V
V
mA
mA
mW
°C
°C
Source
Gate
Drain
EQUIVALENT CIRCUIT
Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15942EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan
©
2002
2SK3230
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Cut-off Current
Gate Cut-off Voltage
Forward Transfer Admittance
Forward Transfer Admittance
Input Capacitance
Noise Voltage
SYMBOL
I
DSS
V
GS(off)
| y
fs1
|
| y
fs2
|
C
iss
NV
TEST CONDITIONS
V
DS
= 5.0 V, V
GS
= 0 V
V
DS
= 5.0 V, I
D
= 1.0
µ
A
V
DS
= 5.0 V, I
D
= 30
µ
A, f = 1.0 kHz
V
DS
= 5.0 V, V
GS
= 0 V, f = 1.0 kHz
V
DS
= 5.0 V, V
GS
= 0 V, f = 1.0 MHz
See Test Circuit
MIN.
40
−0.1
350
350
7.0
1.8
8.0
3.0
TYP.
MAX.
600
−1.0
UNIT
µ
A
V
µ
S
µ
S
pF
µ
V
I
DSS
RANK
MARKING
I
DSS
(
µ
A)
40 to 70
60 to 110
90 to 180
150 to 300
200 to 450
300 to 600
J2
J3
J4
J5
J6
J7
NOISE VOLTAGE TEST CIRCUIT
+4.5 V
JIS A
NV (r.m.s)
R = 1 kΩ
C = 10 pF
2
Data Sheet D15942EJ1V0DS
2SK3230
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF
POWER DISSIPATION
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
40
30
dT - Derating Factor - %
100
80
60
40
20
0
IG - Gate Current -
µ
A
20
10
−1.0 −0.8 −0.6 −0.4 −0.2
−10
−20
−30
−40
0
0.2 0.4 0.6 0.8 1.0
20
40
60
80
100
120 140 160
T
A
- Ambient Temperature - ˚C
V
GS
- Gate to Source Voltage - V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1.0
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100
V
DS
= 0 V
f = 1.0 MHz
V
DS
= 5 V
I
D
- Drain Current - mA
I
DS
I
DSS
=
S
=
2
30
0
µ
=1
0
00
µ
0
µ
A
A
A
0.8
C
iSS
- Input Capacitance - pF
50
20
10
5
0.6
0.4
0.2
I
DS
S
2
1
1
2
5
10
20
50
100
−0.6
−0.4
−0.2
0
+0.2
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
V
GS (off)
- Gate to Source Cut-off Voltage - V
|y
fs
| - Forward Transfer Admittance -
µ
S
GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD
TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE
DRAIN CURRENT CO-RELATION
10.0
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
10
20
50
100
200
500
1000
Zero-Gate Voltage Drain Current -
µ
A
V
GS (off)
|y
fs
|
V
DS
= 5 V
Data Sheet D15942EJ1V0DS
3
2SK3230
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
250
RANK: J2
0.15 V
300
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
RANK: J3
0.15 V
I
D
- Drain Current -
µ
A
I
D
- Drain Current -
µ
A
200
0.10 V
150
100
50
0
0.05 V
V
GS
= 0 V
−0.05
V
−0.10
V
0
2
4
6
−0.15
V
8
10
240
0.10 V
180
120
60
0
0.05 V
V
GS
= 0 V
−0.05
V
−0.10
V
0
2
4
6
−0.15
V
8
10
V
DS
- Drain to Source Voltage - V
V
DS
- Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
RANK: J4
0.15 V
500
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
RANK: J5
0.15 V
0.10 V
I
D
- Drain Current -
µ
A
I
D
- Drain Current -
µ
A
320
240
160
80
0
0.10 V
400
300
200
100
0
0.05 V
V
GS
= 0 V
−0.05
V
−0.10
V
0
2
4
6
−0.15
V
8
10
0.05 V
V
GS
= 0 V
−0.05
V
−0.10
V
−0.15
V
6
0
2
4
8
10
V
DS
- Drain to Source Voltage - V
V
DS
- Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
700
RANK: J6
0.15 V
0.10 V
0.05 V
V
GS
= 0 V
280
140
0
−0.05
V
−0.10
V
−0.15
V
0
2
4
6
8
10
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
900
RANK: J7
0.15 V
0.10 V
0.05 V
540
V
GS
= 0 V
360
180
−0.15
V
0
0
2
4
6
8
10
−0.05
V
−0.10
V
I
D
- Drain Current -
µ
A
420
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current -
µ
A
560
720
V
DS
- Drain to Source Voltage - V
4
Data Sheet D15942EJ1V0DS
2SK3230
[MEMO]
Data Sheet D15942EJ1V0DS
5
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