2SK3651-01R
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol
Ratings
Unit
V
V
DS
200
V
V
DSX *5
220
A
Continuous drain current
I
D
±25
A
Pulsed drain current
I
D(puls]
±100
V
Gate-source voltage
V
GS
±30
A
Non-repetitive Avalanche current I
AS *2
25
mJ
Maximum Avalanche Energy
E
AS *1
372
kV/µs
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
kV/µs
Peak Diode Recovery dV/dt
dV/dt
*3
5
°C
Max. power dissipation
P
D
Ta=25
3.10
W
°C
Tc=25
85
Operating and storage
T
ch
+150
°C
-55 to +150
temperature range
T
stg
°C
Isolation voltage
V
ISO *6
2
kVrms
<150°C *3 I
F
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C
*1 L=1mH, Vcc=48V
*2 Tch =
=
=
=
*4 V
DS
< 250V
*5 V
GS
=-30V *6 t=60sec f=60Hz
=
Item
Drain-source voltage
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=250V V
GS
=0V
V
DS
=200V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=12.5A V
GS
=10V
I
D
=12.5A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=72V I
D
=12.5A
V
GS
=10V
R
GS
=10
Ω
V
CC
=72V
I
D
=12A
V
GS
=10V
L=100µH T
ch
=25°C
I
F
=25A V
GS
=0V T
ch
=25°C
I
F
=25A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
T
ch
=25°C
T
ch
=125°C
10
75
16
2000
400
25
20
30
60
20
44
14
16
1.10
0.45
1.5
Min.
250
3.0
Typ.
Max.
5.0
25
250
100
100
3000
600
38
30
45
90
30
66
21
24
1.65
Units
V
V
µA
nA
mΩ
S
pF
8
ns
nC
25
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
1.471
40.0
Units
°C/W
°C/W
www.fujielectric.co.jp/denshi/scd
1
2SK3651-01R
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
120
500
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=25A
100
400
80
300
60
EAV [mJ]
PD [W]
200
40
100
20
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
Tc [
°
C]
starting Tch [
°
C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
100
100
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
20V
80
10V
8V
7.5V
ID [A]
7.0V
40
6.5V
ID[A]
60
10
1
20
6.0V
VGS=5.5V
0.1
0
1
2
3
4
5
6
7
8
9
10
0
0
2
4
6
8
10
12
VDS [V]
VGS[V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
0.25
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
VGS=
5.5V 6.0V
0.20
6.5V
7.0V
7.5V
RDS(on) [
Ω
]
10
0.15
8V
10V
20V
gfs [S]
0.10
1
0.05
0.1
0.1
0.00
1
10
100
0
20
40
60
80
100
ID [A]
ID [A]
2
2SK3651-01R
FUJI POWER MOSFET
270
240
210
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=12.5A,VGS=10V
7.0
6.5
6.0
5.5
5.0
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
RDS(on) [ m
Ω
]
max.
VGS(th) [V]
180
150
max.
120
90
60
30
0
-50
-25
0
25
50
75
100
125
150
typ.
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
Tch [
°
C]
Tch [
°
C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=25A, Tch=25°C
10
14
12
10
Vcc= 36V
72V
96V
8
6
10
4
2
0
0
10
20
30
40
50
60
-2
-1
0
1
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Ciss
10
VGS [V]
C [nF]
Coss
Crss
10
10
-1
10
0
10
1
10
2
Qg [nC]
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=72V, VGS=10V, RG=10Ω
tf
10
10
2
td(off)
IF [A]
t [ns]
tr
td(on)
1
10
1
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
10
0
10
-1
10
0
10
1
10
2
VSD [V]
ID [A]
3
2SK3651-01R
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
FUJI POWER MOSFET
10
1
10
0
Zth(ch-c) [••/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25°C. Vcc=48V
10
2
Avalanche Current I
AV
[A]
Single Pulse
10
1
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
4
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