VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7807
Features
• Integrated Photodetector/Transimpedance Amplifier
Optimized for High-Speed Optical Communications
Applications
• Fibre Channel/Gigabit Ethernet-Compatible
• High Bandwidth: 1300MHz
• Low Input Noise Equivalent Power: 2.2µW
• Large Optically Active Area
• Single 3.3V Power Supply
• 2.125Gb/s Data Rate
• 70µm Optically Active Area
• Packages: TO-46, TO-56, Bare Die
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Applications
• Gigabit Ethernet Optical Receivers
• Fibre Channel Optical Receivers
• ATM Optical Receivers
• SONET/SDH
• System Interconnect
General Description
The VSC7807 integrated Photodetector/Transimpedance Amplifier provides a highly integrated solution
for converting 850nm light from a fiber optic communications channel into a differential output voltage. The
benefits of Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized to provide very high
bandwidth and low noise in a product with a large optically active area for easy alignment. The sensitivity, duty
cycle distortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. The
VSC7807 is available in either die form, flat-windowed packages or ball-lens packages.
By using a Metal-Semiconductor-Metal (MSM) photodetector with a monolithic integrated transimpedance
amplifier, the input capacitance is lowered which allows for a larger optically active area than in discrete photo-
detectors. Integration also allows superior tracking over process, temperature and voltage between the photode-
tector and the amplifier, resulting in higher performance. The VSC7807 can easily be used in developing Fibre
Channel Electro-Optic Receivers which exhibit very high performance and ease of use.
VSC7807 Block Diagram
+3.3V
DOUTP
DOUTN
Both DOUTP and DOUTN are back-terminated to 25Ω.
G52363-0, Rev 2.1
04/05/01
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 1
VITESSE
SEMICONDUCTOR CORPORATION
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Table 1: Electro-Optical Specifications
(1)
Symbol
V
SS
I
DD
PSRR
λ
F
c
BW
S
R
o
V
D
R
D
V
DC
∆V
DC
NEP
O
V
NO
DCD
I
OUT
PDJ
Advance Product Information
VSC7807
Typ
(2)
3.3
-
-10
840
1.0
1300
20
25
-
2.0
-
-
1
-
-
2.6
-
70
190
-
-
Parameters
Supply Voltage
Supply Current
Power Supply Rejection Ratio
Wavelength
Low Frequency Cutoff
Optical Modulation Bandwidth
Sensitivity
Single-Ended Output Impedance
Differential Output Voltage
Differential Responsivity
Output Bias Voltage
Bias Offset Voltage
Input Noise Equivalent Power
Output Noise Voltage
Duty Cycle Distortion
Output Drive Current
Pattern Dependent Jitter
Optically Active Area
Min
3.0
-
-
700
-
-
-
-
0.2
1.6
1.0
-
-
-
-
2.0
-
-
-
-
-
Max
3.6
40
-
850
2.5
-
-
-
-
-
-
200
2.2
1.25
4.5
-
40
-
200
200
200
Units
V
mA
dB
nm
MHz
MHz
dBm
Ω
V
mV/µW
V
mV
µW
rms
mV rms
%
mA
ps
µm
ps
ps
ps
Conditions
Frequencies up to 40MHz.
Use external filter to get PSRR
of -35dB
(3)
.
-3dB, P
(4)
= -15dBm
-3dB, P = -15dBm
2.488Gb/s, BER10
-12(5)
P = -5 dBm,
R
L
= 100Ω differential
R
L
= 100Ω
At 50MHz
P = 0mW
P = 0mW
P = -5dBm
P = -5dBm
P = -5dBm
+/-10% Voltage Window
Diameter
P = -5dBm
20% to 80% P = -5dBm
20% to 80% P = -5dBm
PPJ
T
R
T
F
PP Jitter
Rise Time
Fall Time
NOTES: (1) Specified over 10°C to 90°C junction. (2) Typical conditions 25°C and 3.3V power supply. (3) See Note 1 in Appli-
cation Note 48. (4) P = Incident Optical Power. (5) See Note 2 In Application Note 48.
Page 2
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52363-0, Rev 2.1
04/05/01
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7807
Absolute Maximum Ratings
(1)
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Power Supply Voltage (V
SS
) .............................................................................................................................. 6V
Storage Humidity s(relative humidity, including condensation)........................................................... 5% to 95%
Operating Humidity (relative humidity, excluding condensation) ........................................................ 8% to 80%
Impact Shock (IS)
(2)
....................................................................................................................................... 500G
Incident Optical Power ................................................................................................................................ +3dBm
Storage Temperature Range (case temperature under bias)
........................................................ −
55°C to +125°C
NOTES: (1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without causing permanent
damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may affect device reli-
ability. (2) Half sine wave, pulse duration 1 ±0.5ms, 3 blows in each direction.
Recommended Operating Conditions
Positive Voltage Rail (V
SS
)
................................................................................................................ 3.0
V to
3.6
V
Optical Power ................................................................................................................................................ 0dBm
Operating Temperature Range (T
A
)............................................................................0°C Ambient to +85°C Case
Figure 1: Pin Diagram (TO-46 and TO-56 packages)
BottomView
VSS
DOUTP
DOUTN
GND
Table 2: Pin Table Specifications for Ball Lens Packages, Flat Window Packages and Bare Die
Symbol
DOUTP
DOUTN
VSS
GND
Description
Data output normal (with reference to incident light)
Data output complement (inverting) (with reference to incident light)
Power supply
Ground (package case)
G52363-0, Rev 2.1
04/05/01
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 3
VITESSE
SEMICONDUCTOR CORPORATION
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Advance Product Information
VSC7807
Figure 2: Pad Assignments
1481µm (58.3mils)
Pad 3
CLON
Pad 4
VGND
Pad 5
VGND
835µm
(32.9mils)
VSC7807
Pad 6
VDD
Pad 2
CLOP
Pad 1
VGND
Die Size:
Die Thickness:
Pad Sizes:
835µm x 1481µm (32.9mils x 58.3mils)
635µm (26mils)
108µm x 108µm (4.3mils x 4.3mils)
244µm x 108µm (9.6mils x 4.3mils)
Pad Passivation Openings: 86µm x 86µm (3.4mils x 3.4mils)
223µm x 86µm (8.8mils x 3.4mils)
Scribe Size:
157µm (6.2mils)
157µm
(6.2mils)
Table 3: Pad Coordinates
Signal
Name
VGND
CLOP
CLON
VGND
VGND
VDD
Pad
Number
1
2
3
4
5
6
Coordinates (µm)
Description
X
55
55
780
780
596.7
244.2
Y
943.6
1093.6
1093.6
943.6
61.4
61.4
Ground
Data output, true (with reference to incident light)
Data output, complement (with reference to incident light)
Ground
Ground
Power Supply
Page 4
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52363-0, Rev 2.1
04/05/01
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7807
Package Information
TO-46 Flat Window Package
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Reference Isometric
G52363-0, Rev 2.1
04/05/01
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 5
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