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VSC7807WB: 产品描述Photodiode Detector, 700nm Min, 850nm Max, 2500Mbps, TO-56, Panel Mount, FLAT WINDOW, TO-56, 4 PIN; 产品类别无线/射频/通信光纤; 文件大小136KB，共10页; 制造商Vitesse Semiconductor Corporation; 官网地址http://www.vitesse.com/

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VSC7807WB概述

Photodiode Detector, 700nm Min, 850nm Max, 2500Mbps, TO-56, Panel Mount, FLAT WINDOW, TO-56, 4 PIN

VSC7807WB规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Vitesse Semiconductor Corporation
包装说明	TO-56
Reach Compliance Code	unknown
主体高度	2.1 mm
主体长度或直径	3.85 mm
通信标准	ATM, GBE
数据速率	2500 Mbps
光纤设备类型	PHOTODIODE DETECTOR
JESD-609代码	e0
安装特点	PANEL MOUNT
最高工作温度	100 °C
最低工作温度
最大工作波长	850 nm
最小工作波长	700 nm
标称工作波长	840 nm
封装形式	TO-56
响应度	4 A/W
最大供电电压	3.6 V
最小供电电压	3 V
标称供电电压	3.3 V
表面贴装	NO
端子面层	Tin/Lead (Sn/Pb)
传输类型	DIGITAL
Base Number Matches	1

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VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7807

Features

• Integrated Photodetector/Transimpedance Amplifier

Optimized for High-Speed Optical Communications

Applications

• Fibre Channel/Gigabit Ethernet-Compatible

• High Bandwidth: 1300MHz

• Low Input Noise Equivalent Power: 2.2µW

• Large Optically Active Area

• Single 3.3V Power Supply

• 2.125Gb/s Data Rate

• 70µm Optically Active Area

• Packages: TO-46, TO-56, Bare Die

Photodetector/Transimpedance Amplifier

Family for Optical Communication

Applications

• Gigabit Ethernet Optical Receivers

• Fibre Channel Optical Receivers

• ATM Optical Receivers

• SONET/SDH

• System Interconnect

General Description

The VSC7807 integrated Photodetector/Transimpedance Amplifier provides a highly integrated solution

for converting 850nm light from a fiber optic communications channel into a differential output voltage. The

benefits of Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized to provide very high

bandwidth and low noise in a product with a large optically active area for easy alignment. The sensitivity, duty

cycle distortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. The

VSC7807 is available in either die form, flat-windowed packages or ball-lens packages.

By using a Metal-Semiconductor-Metal (MSM) photodetector with a monolithic integrated transimpedance

amplifier, the input capacitance is lowered which allows for a larger optically active area than in discrete photo-

detectors. Integration also allows superior tracking over process, temperature and voltage between the photode-

tector and the amplifier, resulting in higher performance. The VSC7807 can easily be used in developing Fibre

Channel Electro-Optic Receivers which exhibit very high performance and ease of use.

VSC7807 Block Diagram

+3.3V

DOUTP

DOUTN

Both DOUTP and DOUTN are back-terminated to 25Ω.

G52363-0, Rev 2.1

04/05/01

VITESSE

SEMICONDUCTOR CORPORATION

• 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

Page 1

VSC7807WB相似产品对比

	VSC7807WB	VSC7807WC
描述	Photodiode Detector, 700nm Min, 850nm Max, 2500Mbps, TO-56, Panel Mount, FLAT WINDOW, TO-56, 4 PIN	Photodiode Detector, 700nm Min, 850nm Max, 2500Mbps, TO-46, Panel Mount, BALL LENS, TO-46, 4 PIN
是否Rohs认证	不符合	不符合
厂商名称	Vitesse Semiconductor Corporation	Vitesse Semiconductor Corporation
包装说明	TO-56	TO-46
Reach Compliance Code	unknown	unknown
主体高度	2.1 mm	3.5 mm
主体长度或直径	3.85 mm	4.7 mm
通信标准	ATM, GBE	ATM, GBE
数据速率	2500 Mbps	2500 Mbps
光纤设备类型	PHOTODIODE DETECTOR	PHOTODIODE DETECTOR
JESD-609代码	e0	e0
安装特点	PANEL MOUNT	PANEL MOUNT
最高工作温度	100 °C	100 °C
最大工作波长	850 nm	850 nm
最小工作波长	700 nm	700 nm
标称工作波长	840 nm	840 nm
封装形式	TO-56	TO-46
响应度	4 A/W	4 A/W
最大供电电压	3.6 V	3.6 V
最小供电电压	3 V	3 V
标称供电电压	3.3 V	3.3 V
表面贴装	NO	NO
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
传输类型	DIGITAL	DIGITAL
Base Number Matches	1	1

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