HANBit
HMN1M8DVN
Non-Volatile SRAM MODULE 8Mbit (1024k x 8bit) 40Pin
–
DIP, 3.3V
Part No.
HMN1M8DVN
GENERAL DESCRIPTION
The HMN1M8DVN Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits.
The HMN1M8DVN has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited
write cycles of standard SRAM and integral control circuitry which constantly monitors the single 3.3V supply for an out-of-
tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the
memory until after V
CC
returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the
SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is
switched on to sustain the memory until after V
CC
returns valid.
The HMN1M8DVN uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide
non-volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
w
Access time : 70, 85, 120, 150 ns
w
High-density design : 8Mbit Design
w
Battery internally isolated until power is applied
w
Industry-standard 40-pin 1,024K x 8 pinout
w
Unlimited write cycles
w
Data retention in the absence of V
CC
w
10-years minimum data retention in absence of power
w
Automatic write-protection during power-up/power-down
cycles
w
Data is automatically protected during power loss
PIN ASSIGNMENT
DU
NC
NC
A
18
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DQ
0
DQ
1
DQ
2
V
SS
DU
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
OPTIONS
w
Timing
70 ns
85 ns
120 ns
150 ns
MARKING
- 70
- 85
-100
-150
DU
V
CC
A
19
NC
A
15
A
17
/WE
A
13
A
8
A
9
A
11
/OE
A
10
/CE
DQ
7
DQ
6
DQ
5
DQ
4
DQ
3
DU
40-pin Encapsulated Package
URL:www.hbe.co.kr
Rev.0.0
(January/ 2003)
1
HANBit Electronics Co.,Ltd
HANBit
HMN1M8DVN
FUNCTIONAL DESCRIPTION
The HMN1M8DVN executes a read cycle whenever /WE is inactive(high) and /CE is active(low). The address specified by
the address inputs(A
0
-A
19
) defines which of the 1,048,576 bytes of data is accessed. Valid data will be available to the
eight data output drivers within t
ACC
(access time) after the last address input signal is stable.
When power is valid, the HMN1M8DVN operates as a standard CMOS SRAM. During power-down and power-up cycles,
the HMN1M8DVN acts as a nonvolatile memory, automatically protecting and preserving the memory contents.
The HMN1M8DVN is in the write mode whenever the /WE and /CE signals are in the active (low) state after address
inputs are stable. The later occurring falling edge of /CE or /WE will determine the start of the write cycle. The write cycle
is terminated by the earlier rising edge of /CE or /WE. All address inputs must be kept valid throughout the write cycle.
/WE must return to the high state for a minimum recovery time (t
WR
) before another cycle can be initiated. The /OE control
signal should be kept inactive (high) during write cycles to avoid bus contention. However, if the output bus been enabled
(/CE and /OE active) then /WE will disable the outputs in t
ODW
from its falling edge.
The HMN1M8DVN provides full functional capability for Vcc greater than 3.0 V and write protects by 2.8 V nominal.
Power-down/power-up control circuitry constantly monitors the Vcc supply for a power-fail-detect threshold V
PFD
. When
V
CC
falls below the V
PFD
threshold, the SRAM automatically write-protects the data. All inputs to the RAM become
“don’t
care” and all outputs are high impedance. As Vcc falls below approximately 2.5V, the power switching circuit connects the
lithium energy soure to RAM to retain data. During power-up, when Vcc rises above approximately 2.5 volts, the power
switching circuit connects external Vcc to the RAM and disconnects the lithium energy source. Normal RAM operation can
resume after Vcc exceeds 3.0 volts.
BLOCK DIAGRAM
PIN DESCRIPTION
/OE
/WE
2 x 512K x 8
SRAM
Block
Power
A
0
-A
19
DQ
0
-DQ
7
A
0
-A
19
: Address Input
/CE : Chip Enable
V
SS
: Ground
DQ
0
-DQ
7
: Data In / Data Out
/CE
CON
/WE : Write Enable
/CE
A
19
Power
–
Fail
Control
Lithium
Cell
V
CC
/OE : Output Enable
V
CC
: Power (+3.3V)
NC : No Connection
DU : Do not use.
URL:www.hbe.co.kr
Rev.0.0
(January/ 2003)
2
HANBit Electronics Co.,Ltd
HANBit
HMN1M8DVN
TRUTH TABLE
MODE
Not selected
Output disable
Read
Write
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
I/O OPERATION
High Z
High Z
D
OUT
D
IN
POWER
Standby
Active
Active
Active
ABSOLUTE MAXIMUM RATINGS
PARAMETER
DC voltage applied on V
CC
relative to V
SS
DC Voltage applied on any pin excluding V
CC
relative to
V
SS
Operating temperature
Storage temperature
Soldering temperature
SYMBOL
V
CC
V
T
T
OPR
T
STG
T
SOLDER
RATING
-0.5V to Vcc+0.5
-0.3V to 4.6V
0 to 70°C
-65°C to 150°C
260°C
For 10 second
V
T
≤
V
CC
+0.3
CONDITIONS
NOTE:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
Functional operation should be restricted to the Recommended DC Operating Conditions detailed in this data sheet.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
( T
A
= T
OPR
)
PARAMETER
Supply Voltage
Ground
Input high voltage
Input low voltage
SYMBOL
V
CC
V
SS
V
IH
V
IL
MIN
3.0V
0
2.2
-0.3
TYPICAL
3.3V
0
-
-
MAX
3.6V
0
V
CC+
0.3
0.6V
NOTE:
Typical values indicate operation at T
A
= 25℃
CAPACITANCE
(T
A
=25℃ , f=1MHz, V
CC
=3.3V)
DESCRIPTION
Input Capacitance
Input/Output Capacitance
1. Only sampled, not 100% tested
CONDITIONS
Input voltage = 0V
Output voltage = 0V
SYMBOL
C
IN
C
I/O
MAX
8
10
MIN
-
-
UNIT
pF
pF
URL:www.hbe.co.kr
Rev.0.0
(January/ 2003)
3
HANBit Electronics Co.,Ltd
HANBit
HMN1M8DVN
DC ELECTRICAL CHARACTERISTICS
(T
A
= T
OPR
, V
CCmin
≤
V
CC
≤
V
CCmax
)
PARAMETER
Input Leakage Current
Output Leakage Current
Output high voltage
Output low voltage
CONDITIONS
V
IN
=V
SS
to V
CC
/CE=V
IH
or /OE=V
IH
or /WE=V
IL
I
OH
=-1.0mA
I
OL
= 2.0mA
Threshold
Power-fail Deselect Voltage
Voltage
(THS = V
SS
)
Standby supply current
/CE=2.2v
/CE≥ V
CC
-0.2V,
Standby supply current
0V≤ V
IN
≤
0.2V,
or V
IN
≥
V
CC
-0.2V
Operating
current
Supply switch-over voltage
Power
supply
/CE=V
IL
, I
I/O
=0㎃ ,
V
IN
= V
IL
or V
IH,
Read
I
CC
V
SO
-
-
2.5
12
-
㎃
V
I
SB1
-
-
30
µA
I
SB
-
-
0.6
㎃
Select
V
PFD
2.8
2.9
3.0
V
SYMBOL
I
LI
I
LO
V
OH
V
OL
MIN
-
-
2.4
-
TYP.
-
-
-
-
MAX
±
3.0
±
3.0
-
0.4
UNIT
µA
µA
V
V
CHARACTERISTICS
(Test Conditions)
+3.3V
+3.3V
1.9KΩ
PARAMETER
Input pulse levels
Input rise and fall times
Input and output timing reference
levels
Output load (CL =30pF+1TTL)
(CL =100pF+1TTL)
1)
1)
VALUE
0.4 to 2.2V
5 ns
1KΩ
D
OUT
1.9KΩ
D
OUT
100㎊
1KΩ
5㎊
3.3V
( unless otherwise specified)
See Figures
Figure 1.
Output Load A
Figure 2.
Output Load B
Note
: Including scope and jig capacitance
URL:www.hbe.co.kr
Rev.0.0
(January/ 2003)
4
HANBit Electronics Co.,Ltd
HANBit
READ CYCLE
(T
A
= T
OPR
, V
CCmin
≤
V
CC
≤
V
CCmax
)
-70
PARAMETER
Read Cycle Time
Address Access Time
Chip enable access time
Output enable to Output valid
Chip enable to output in low Z
Output enable to output in low Z
Chip disable to output in high Z
Output disable to output high Z
Output hold from address change
SYMBOL
t
RC
t
ACC
t
ACE
t
OE
t
CLZ
t
OLZ
t
CHZ
t
OHZ
t
OH
Output load A
Output load A
Output load A
Output load B
Output load B
Output load B
Output load B
Output load A
CONDITIONS
MIN
70
-
-
-
5
5
0
0
10
MAX
-
70
70
35
-
-
25
25
-
MIN
85
-
-
-
5
0
0
0
10
MAX
-
85
85
45
-
-
35
25
-
MIN
120
-
-
-
5
0
0
0
10
-85
HMN1M8DVN
-120
MAX
-
120
120
60
-
-
45
35
-
-150
UNIT
MIN
150
-
-
-
10
5
0
0
10
MAX
-
150
150
70
-
-
60
50
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
WRITE CYCLE
(T
A
= T
OPR
, V
ccmin
≤
V
cc
≤
V
ccmax
)
-70
PARAMETER
Write Cycle Time
Chip enable to end of write
Address setup time
Address valid to end of write
Write pulse width
Write recovery time (write cycle 1)
Write recovery time (write cycle 2)
Data valid to end of write
Data hold time (write cycle 1)
Data hold time (write cycle 2)
Write enabled to output in high Z
Output active from end of write
SYMBOL
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR1
t
WR2
t
DW
t
DH1
t
DH2
t
WZ
t
OW
Note 4
Note 4
Note 5
Note 5
Note 1
Note 2
Note 1
Note 1
Note 3
Note 3
CONDITIONS
MIN
70
65
0
65
55
5
15
30
0
10
0
5
MAX
-
-
-
-
-
-
-
-
-
-
25
-
MIN
85
75
0
75
65
5
15
35
0
10
0
0
MAX
-
-
-
-
-
-
-
-
-
-
30
-
MIN
120
100
0
100
85
5
15
45
0
10
0
0
MAX
-
-
-
-
-
-
-
-
-
-
40
-
Min
150
100
0
90
90
5
15
50
0
0
0
5
Max
-
-
-
-
-
-
-
-
-
-
50
-
T
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-85
-120
-150
UNI
NOTE:
1. A write ends at the earlier transition of /CE going high and /WE going high.
2. A write occurs during the overlap of allow /CE and a low /WE. A write begins at the later transition of /CE
going low and /WE going low.
3. Either t
WR1
or t
WR2
must be met.
4. Either t
DH1
or t
DH2
must be met.
5. If /CE goes low simultaneously with /WE going low or after /WE going low, the outputs remain in high-
impedance state.
URL:www.hbe.co.kr
Rev.0.0
(January/ 2003)
5
HANBit Electronics Co.,Ltd
分立器件
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