IRF3808SPbF
IRF3808LPbF
Typical Applications
l
Industrial Motor Drive
HEXFET
®
Power MOSFET
D
Benefits
l
l
l
l
l
l
l
V
DSS
= 75V
R
DS(on)
= 0.007Ω
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
G
S
I
D
= 106A
Description
This Advanced Planar Stripe HEXFET ® Power MOSFET
utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, low RθJC, fast switching
speed and improved repetitive avalanche rating. This
combination makes the design an extremely efficient and
reliable choice for use in a wide variety of applications.
Base Part Number
IRF3808LPbF
IRF3808SPbF
Package Type
TO-262
D Pak
2
D
2
Pak
IRF3808SPbF
TO-262
IRF3808LPbF
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
50
800
800
Orderable Part Number
IRF3808LPbF
IRF3808SPbF
IRF3808STRLPbF
IRF3808STRRPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
106
75
550
200
1.3
± 20
430
82
See Fig.12a, 12b, 15, 16
5.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
(PCB Mounted, Steady State)
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
1
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IRF3808S/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min.
75
–––
–––
2.0
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.086
5.9
–––
–––
–––
–––
–––
–––
150
31
50
16
140
68
120
4.5
7.5
5310
890
130
6010
570
1140
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250μA
––– V/°C Reference to 25°C, I
D
= 1mA
7.0
mΩ V
GS
= 10V, I
D
= 82A
4.0
V
V
DS
= 10V, I
D
= 250μA
–––
S
V
DS
= 25V, I
D
= 82A
20
V
DS
= 75V, V
GS
= 0V
μA
250
V
DS
= 60V, V
GS
= 0V, T
J
= 150°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
220
I
D
= 82A
47
nC V
DS
= 60V
76
V
GS
= 10V
–––
V
DD
= 38V
–––
I
D
= 82A
ns
–––
R
G
= 2.5Ω
–––
V
GS
= 10V
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 60V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 60V
Source-Drain Ratings and Characteristics
Min. Typ. Max. Units
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.130mH
R
G
= 25Ω, I
AS
= 82A. (See Figure 12).
I
SD
≤
82A, di/dt
≤
310A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
Conditions
D
MOSFET symbol
––– ––– 106
showing the
A
G
integral reverse
––– ––– 550
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 82A, V
GS
= 0V
––– 93 140
ns
T
J
= 25°C, I
F
= 82A
––– 340 510
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
C
oss
eff. is a fixed capacitance that gives the same charging time
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
avalanche performance.
For recommended footprint and soldering techniques refer to
application note #AN-994.
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
2
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November 01, 2013
IRF3808S/LPbF
1000
TOP
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
100
4.5V
4.5V
10
10
1
0.1
1
20μs PULSE WIDTH
T
J
= 25
°
C
10
100
1
0.1
1
20μs PULSE WIDTH
T
J
= 175
°
C
10
100
V
DS
Drain-to-Source Voltage (V)
,
V
DS
Drain-to-Source Voltage (V)
,
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
3.0
I
D
= 137A
ID, Drain-to-Source Current
(Α
)
2.5
R
DS(on)
, Drain-to-Source On Resistance
TJ = 175°C
2.0
(Normalized)
100.00
1.5
T J = 25°C
1.0
0.5
10.00
1.0
3.0
5.0
7.0
VDS = 15V
20μs PULSE WIDTH
9.0
11.0
13.0
15.0
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 160 180
T
J
, Junction Temperature
(
°
C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
3
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRF3808S/LPbF
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
V
GS
, Gate-to-Source Voltage (V)
12
I
D
=
82A
10
V
DS
= 60V
V
DS
= 37V
V
DS
= 15V
C, Capacitance(pF)
10000
8
Ciss
6
1000
Coss
4
2
Crss
100
1
10
100
0
0
40
80
120
160
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 175°C
10.00
T J = 25°C
1.00
VGS = 0V
0.10
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
100μsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1msec
10msec
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
November 01, 2013
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IRF3808S/LPbF
120
V
DS
100
ID, Drain Current (A)
R
D
V
GS
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
80
60
40
20
0
25
50
75
100
125
150
175
10%
V
GS
-
V
DD
Fig 10a.
Switching Time Test Circuit
V
DS
90%
TC , Case Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
(Z
thJC
)
D = 0.50
0.20
Thermal Response
0.1
0.10
P
DM
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
+T
C
1
10
J
= P
DM
x Z
thJC
0.05
0.01
0.00001
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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© 2013 International Rectifier
Submit Datasheet Feedback
November 01, 2013
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