Datasheet> 器件分类 > 存储> 存储> 5962-9305606MXC

文档预览

5962-9305606MXC: 产品描述Non-Volatile SRAM, 8KX8, 35ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28; 产品类别存储存储; 文件大小75KB，共10页; 制造商Simtek; 官网地址http://www.simtek.com

下载文档详细参数选型对比全文预览

5962-9305606MXC概述

Non-Volatile SRAM, 8KX8, 35ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28

5962-9305606MXC规格参数

参数名称	属性值
是否Rohs认证	不符合
包装说明	DIP, DIP28,.3
Reach Compliance Code	unknown
ECCN代码	3A001.A.2.C
最长访问时间	35 ns
其他特性	RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL
JESD-30 代码	R-CDIP-T28
JESD-609代码	e0
长度	35.56 mm
内存密度	65536 bit
内存集成电路类型	NON-VOLATILE SRAM
内存宽度	8
功能数量	1
端口数量	1
端子数量	28
字数	8192 words
字数代码	8000
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	8KX8
输出特性	3-STATE
可输出	YES
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	DIP
封装等效代码	DIP28,.3
封装形状	RECTANGULAR
封装形式	IN-LINE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	240
电源	5 V
认证状态	Not Qualified
筛选级别	MIL-STD-883
座面最大高度	4.14 mm
最大待机电流	0.002 A
最大压摆率	0.08 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	NO
技术	CMOS
温度等级	MILITARY
端子面层	Tin/Lead (Sn85Pb15)
端子形式	THROUGH-HOLE
端子节距	2.54 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	7.62 mm
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

STK10C68-M

CMOS nvSRAM

High Performance

8K x 8 Nonvolatile Static RAM

MIL-STD-833/SMD 5962 - 93056

FEATURES

• 35, 45 and 55ns Access Times

• 20 and 25ns Output Enable Access

•

Unlimited Read and Write to

SRAM

Hardware

STORE

Initiation

Automatic

STORE

Timing

100,000

STORE

cycles to

EEPROM

10 year data retention in

EEPROM

Automatic

RECALL

on Power Up

Hardware

RECALL

Initiation

Unlimited

RECALL

cycles from

EEPROM

Single 5V

10% Operation

DESCRIPTION

The Simtek STK10C68-M is a fast static

RAM

(35, 45

and 55ns), with a nonvolatile electrically-erasable

PROM

(

EEPROM

) element incorporated in each static memory

cell. The

SRAM

can be read and written an unlimited

number of times, while independent nonvolatile data

resides in

EEPROM

. Data may easily be transferred

from the

SRAM

to the

EEPROM

(

STORE

), or from the

EEPROM

to the

SRAM

(

RECALL

) using the NE pin. It

combines the high performance and ease of use of a

fast

SRAM

with nonvolatile data integrity.

The STK10C68 features industry standard pinout for

nonvolatile

RAM

s in a 28-pin 300 mil ceramic DIP, and

28-pad LCC packages. Commercial and industrial

temperature devices are also available.

• Available in multiple standard packages

LOGIC BLOCK DIAGRAM

EEPROM ARRAY

256 x 256

ROW DECODER

PIN CONFIGURATIONS

Vcc

28 27

STORE

STATIC RAM

ARRAY

256 x 256

RECALL

TOP VIEW

13 14 15 16 17

Vss

28-LCC

28-300 CDIP

COLUMN I/O

INPUT BUFFERS

STORE/

RECALL

CONTROL

PIN NAMES

- A

- DQ

COLUMN DECODER

Address Inputs

Write Enable

Data In/Out

Chip Enable

Output Enable

Nonvolatile Enable

Power (+5V)

Ground

4-11

5962-9305606MXC相似产品对比

	5962-9305606MXC	5962-9305604MYC	5962-9305606MXA	5962-9305604MXA	STK10C68-5K55M	5962-9305605MYC	5962-9305606MYC	5962-9305605MXA
描述	Non-Volatile SRAM, 8KX8, 35ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28	Non-Volatile SRAM, 8KX8, 55ns, CMOS, CQCC28, CERAMIC, LCC-28	Non-Volatile SRAM, 8KX8, 35ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28	Non-Volatile SRAM, 8KX8, 55ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28	Non-Volatile SRAM, 8KX8, 55ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28	Non-Volatile SRAM, 8KX8, 45ns, CMOS, CQCC28, CERAMIC, LCC-28	Non-Volatile SRAM, 8KX8, 35ns, CMOS, CQCC28, CERAMIC, LCC-28	Non-Volatile SRAM, 8KX8, 45ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28
包装说明	DIP, DIP28,.3	QCCN,	DIP, DIP28,.3	DIP, DIP28,.3	DIP, DIP28,.3	QCCN,	QCCN,	DIP, DIP28,.3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
最长访问时间	35 ns	55 ns	35 ns	55 ns	55 ns	45 ns	35 ns	45 ns
其他特性	RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL	RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL	RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL	RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL	RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL	RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL	RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL	RETENTION/ENDURANCE-10 YEARS/100000 CYCLES; HARDWARE STORE/RECALL
JESD-30 代码	R-CDIP-T28	R-CQCC-N28	R-CDIP-T28	R-CDIP-T28	R-CDIP-T28	R-CQCC-N28	R-CQCC-N28	R-CDIP-T28
JESD-609代码	e0	e4	e0	e0	e0	e4	e4	e0
长度	35.56 mm	13.97 mm	35.56 mm	35.56 mm	35.56 mm	13.97 mm	13.97 mm	35.56 mm
内存密度	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit
内存集成电路类型	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM
内存宽度	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1
端子数量	28	28	28	28	28	28	28	28
字数	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words
字数代码	8000	8000	8000	8000	8000	8000	8000	8000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
组织	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
可输出	YES	YES	YES	YES	YES	YES	YES	YES
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装代码	DIP	QCCN	DIP	DIP	DIP	QCCN	QCCN	DIP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	CHIP CARRIER	IN-LINE	IN-LINE	IN-LINE	CHIP CARRIER	CHIP CARRIER	IN-LINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	240	260	240	240	240	260	260	240
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
筛选级别	MIL-STD-883	MIL-STD-883	MIL-STD-883	MIL-STD-883	38535Q/M;38534H;883B	MIL-STD-883	MIL-STD-883	MIL-STD-883
座面最大高度	4.14 mm	2.29 mm	4.14 mm	4.14 mm	4.14 mm	2.29 mm	2.29 mm	4.14 mm
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	YES	NO	NO	NO	YES	YES	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
端子面层	Tin/Lead (Sn85Pb15)	GOLD	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	GOLD	GOLD	Tin/Lead (Sn85Pb15)
端子形式	THROUGH-HOLE	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	NO LEAD	THROUGH-HOLE
端子节距	2.54 mm	1.27 mm	2.54 mm	2.54 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm
端子位置	DUAL	QUAD	DUAL	DUAL	DUAL	QUAD	QUAD	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	7.62 mm	8.89 mm	7.62 mm	7.62 mm	7.62 mm	8.89 mm	8.89 mm	7.62 mm
是否Rohs认证	不符合	-	不符合	不符合	不符合	-	-	不符合
封装等效代码	DIP28,.3	-	DIP28,.3	DIP28,.3	DIP28,.3	-	-	DIP28,.3
电源	5 V	-	5 V	5 V	5 V	-	-	5 V
最大待机电流	0.002 A	-	0.002 A	0.002 A	0.002 A	-	-	0.002 A
最大压摆率	0.08 mA	-	0.08 mA	0.07 mA	0.08 mA	-	-	0.075 mA
Base Number Matches	1	1	1	1	1	-	-	-
厂商名称	-	-	-	Simtek	Simtek	Simtek	Simtek	Simtek

5962-9305606MXC

5962-9305606MXC概述

5962-9305606MXC规格参数

文档预览

5962-9305606MXC相似产品对比

推荐资源