WS512K8-XCX
HI-RELIABILITY PRODUCT
512Kx8 SRAM MODULE, SMD 5962-92078
FIG. 1
PIN CONFIGURATION
TOP VIEW
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
FEATURES
s
Access Times 20, 25, 35, 45ns
s
Standard Microcircuit Drawing, 5962-92078
s
MIL-STD-883 Compliant Devices Available
s
Rad Tolerant Devices Available
s
JEDEC Standard 32 pin, Hermetic Ceramic DIP (Package 300)
s
Commercial, Industrial andMilitary Temperature Range
(-55°C to +125°C)
s
Organized as 512K x 8
s
5 Volt Power Supply
s
Low Power CMOS
s
TTL Compatible Inputs and Outputs
s
Battery Back-Up Operation
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
PIN DESCRIPTION
A
0-18
I/O
0-7
CS
OE
WE
V
CC
GND
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
BLOCK DIAGRAM
A
0
-
16
I/O
0-7
WE
OE
128K x 8
128K x 8
128K x 8
128K x 8
A
17
A
18
CS
Decoder
May 1999 Rev. 2
1
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WS512K8-XCX
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
-0.5
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
7.0
Unit
°C
°C
V
°C
V
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
TRUTH TABLE
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.5
-55
Max
5.5
V
CC
+ 0.3
+0.8
+125
Unit
V
V
V
°C
Parameter
Input capacitance
Output capicitance
CAPACITANCE
(T
A
= +25°C)
Symbol
C
IN
C
OUT
Condition
V
IN
= 0V, f = 1.0MHz
V
OUT
= 0V, f = 1.0MHz
Max
45
45
Unit
pF
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55°C to +125°C)
Parameter
Symbol
Conditions
-20
Min
Max
10
10
210
80
0.4
2.4
-25
Min
Max
10
10
210
60
0.4
-35
-45
Min Max Min
Max
10
10
10
10
210
210
60
55
0.4
0.4
2.4
2.4
Units
µA
µA
mA
mA
V
V
Input Leakage Current
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
Output Leakage Current
I
LO
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
Operating Supply Current
I
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
Standby Current
I
SB
CS = V
IH
, OE = V
IH
, f = 5MHz
Output Low Voltage
V
OL
I
OL
= 8mA, Vcc = 4.5
Output High Voltage
V
OH
I
OH
= -4.0mA, Vcc = 4.5
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
2.4
DATA RETENTION CHARACTERISTICS
(T
A
= -55°C to +125°C)
Parameter
Data Retention Supply Voltage
Data Retention Current
Symbol
V
DR
I
CCDR1
Conditions
Min
CS
≥
V
CC
-0.2V
V
CC
= 3V
2.0
8.0
-20
Typ
Max
5.5
12.8
Min
2.0
8.0
-25
Typ
Max
5.5
12.8
Min
2.0
-35
Typ Max Min
5.5
8.0 12.8
2.0
-45
Typ Max
5.5
8.0 12.8
V
mA
Units
FIG. 2
AC TEST CIRCUIT
Current Source
I
OL
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
D.U.T.
V
Z
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
≈
1.5V
Output Timing Reference Level
C
eff
= 50 pf
(Bipolar Supply)
I
OH
Current Source
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
2
WS512K8-XCX
AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55°C to +125°C)
Parameter
Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
t
RC
t
AA
t
OH
t
ACS
t
OE
t
CLZ
1
t
OLZ
1
t
CHZ
t
OHZ
1
Symbol
Min
20
-20
Max
Min
25
20
3
20
10
3
0
15
12
3
0
3
-25
Max
Min
35
25
3
25
10
3
0
17
15
-35
Max
Min
45
35
3
35
25
3
0
20
20
-45
Max
Units
ns
45
45
35
ns
ns
ns
ns
ns
ns
30
25
ns
ns
1
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(V
CC
= 5.0V, GND =0V, T
A
= -55°C to +125°C)
Parameter
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
1
t
WHZ
t
DH
1
Symbol
Min
20
16
16
15
16
2
2
4
-20
Max
Min
25
20
20
15
20
2
2
5
10
1
0
1
-25
Max
Min
35
25
25
20
25
2
2
5
15
0
1
-35
Max
Min
45
30
30
25
30
2
2
5
20
0
1
-45
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
25
ns
ns
1. This parameter is guaranteed by design but not tested.
3
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WS512K8-XCX
FIG. 3
TIMING WAVEFORM - READ CYCLE
ADDRESS
t
RC
t
AA
CS
t
RC
ADDRESS
t
ACS
t
CLZ
OE
t
CHZ
t
AA
t
OH
DATA I/O
PREVIOUS DATA VALID
DATA VALID
t
OE
t
OLZ
DATA I/O
HIGH IMPEDANCE
t
OHZ
DATA VALID
READ CYCLE 1 (CS = OE = V
IL
, WE = V
IH
)
READ CYCLE 2 (WE = V
IH
)
FIG. 4
WRITE CYCLE - WE CONTROLLED
t
WC
ADDRESS
t
AW
t
CW
CS
t
AH
t
AS
WE
t
WP
t
OW
t
WHZ
t
DW
t
DH
DATA I/O
DATA VALID
WRITE CYCLE 1, WE CONTROLLED
FIG. 5
WRITE CYCLE - CS CONTROLLED
ADDRESS
t
WC
WS32K32-XHX
t
AS
t
AW
t
CW
t
AH
CS
t
WP
WE
t
DW
DATA I/O
DATA VALID
t
DH
WRITE CYCLE 2, CS CONTROLLED
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
4
WS512K8-XCX
PACKAGE 300:
32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.4 (1.670)
±
0.4 (0.016)
15.04 (0.592)
±
0.3 (0.012)
4.34 (0.171)
±
0.79 (0.031)
PIN 1 IDENTIFIER
3.2 (0.125) MIN
0.84 (0.033)
±
0.4 (0.014)
2.5 (0.100)
TYP
1.27 (0.050)
±
0.1 (0.005)
0.46 (0.018)
±
0.05 (0.002)
0.25 (0.010)
±
0.05 (0.002)
15.25 (0.600)
±
0.25 (0.010)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
5
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
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