LPC660 Low Power CMOS Quad Operational Amplifier
| 参数名称 | 属性值 |
| GBW(Typ)(MHz) | 0.35 |
| Iq per channel(Max)(mA) | 0.05 |
| Iq per channel(Typ)(mA) | 0.04 |
| Vos (offset voltage @ 25 C)(Max)(mV) | 3 |
| Offset drift(Typ)(uV/C) | 1.3 |
| Input bias current(Max)(pA) | 20 |
| Total supply voltage(Min)(+5V=5, +/-5V=10) | 5 |
| Rail-to-rail | In to V-,Out |
| CMRR(Min)(dB) | 63 |
| Features | N/A |
| Output swing headroom (to positive supply)(Typ)(V) | -0.013 |
| Rating | Catalog |
| Slew rate(Typ)(V/us) | 0.11 |
| Package Group | SOIC|14 |
| Output current(Typ)(mA) | 21 |
| Vn at 1 kHz(Typ)(nV/rtHz) | 42 |
| CMRR(Typ)(dB) | 83 |
| Architecture | CMOS |
| Number of channels(#) | 4 |
| Input common mode headroom (to positive supply)(Typ)(V) | -1.9 |
| Operating temperature range(C) | -40 to 85 |
| Output swing headroom (to negative supply)(Typ)(V) | 0.004 |
| Input common mode headroom (to negative supply)(Typ)(V) | -0.4 |
| Total supply voltage(Max)(+5V=5, +/-5V=10) | 15 |
| Approx. price(US$) | 1.53 | 1ku |
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