HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2002.02.18
Page No. : 1/4
HPH2369
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HPH2369 is designed for general purpose switching and
amplifier applications.
Features
•
Low Collector Saturation Voltage
•
High speed switching Transistor
TO-92
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 40 V
VCES Collector to Emitter Voltage ...................................................................................... 40 V
VCEO Collector to Emitter Voltage ...................................................................................... 15 V
VEBO Emitter to Base Voltage ........................................................................................... 4.5 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVCES
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
fT
Cob
Min.
40
15
40
4.5
-
-
-
-
-
-
700
-
40
20
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
80
-
-
-
Max.
-
-
-
-
400
300
100
250
300
600
850
1.5
120
-
-
4
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
Test Conditions
IC=100uA, IE=0
IC=10mA, IB=0
IC=10uA, VBE=0
IE=10uA, IC=0
VCB=20V, IE=0
VCE=25V, VBE=0
VEB=2V, IC=0
IC=10mA, IB=1mA
IC=10mA, IB=0.3mA
IC=100mA, IB=10mA
IC=10mA, IB=1mA
IC=100mA, IB=1mA
IC=10mA, VCE=1V
IC=100mA, VCE=2V
IC=10mA, VCE=10V, f=100MHZ
VCB=5V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HPH2369
HSMC Product Specification
MHz
pF
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100
125 C
25 C
75 C
o
o
o
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2002.02.18
Page No. : 2/4
Current Gain & Collector Current
100
125 C
25 C
75 C
o
o
o
hFE
10
hFE
hFE @ V
CE
=1V
10
hFE @ V
CE
=2V
1
1
1
10
100
1000
0.1
1
10
100
1000
Collector Current-IC (mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
100000
10000
Saturation Voltage & Collector Current
Saturation Voltage (mV)
Saturation Voltage (mV)
10000
1000
1000
75 C
125 C
100
25 C
V
CE(sat)
@ I
C
=33I
B
10
0.1
1
10
100
1000
o
o
o
75 C
100
o
o
125 C
o
25 C
10
0.1
1
10
V
CE(sat)
@ I
C
=10I
B
100
1000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
10000
On Voltage & Collector Current
1
V
BE(on)
@ V
CE
=1V
Saturation Voltage (mV)
75 C
1000
25 C
o
o
125 C
V
BE(sat)
@ I
C
=10I
B
100
0.1
1
10
100
1000
o
On Voltage (mV)
0.1
0.1
1
10
100
Collector Current-I
C
(mA)
Collector Current (mA)
HPH2369
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2002.02.18
Page No. : 3/4
Capacitance & Reverse-Biased Voltage
10
10000
Cutoff Frequency & Collector Current
1000
Cutoff Frequency
(GHz)
Capacitance (pF)
fT @ V
CE
=10V
100
10
Cob
1
1
0.1
1
10
100
0.1
1
10
100
Reverse-Biased Voltage (V)
Collector Current-I
C
(mA)
Safe Operating Area
10000
PD-Ta
700
600
Collector Current-I
C
(mA)
1000
P
T
=1ms
P
T
=100ms
P
T
=1s
100
Power Dissipation-PD (mW)
500
400
300
200
100
0
10
1
1
10
100
0
50
100
o
150
200
Forward Voltage-V
CE
(V)
Ambient Temperature-Ta ( C)
HPH2369
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
B
1
2
3
Date Code
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2002.02.18
Page No. : 4/4
α
2
Marking:
H
PH
2 3 6 9
Control Code
α
3
C
Style: Pin 1.Collector 2.Base 3.Emitter
D
H
I
E
F
G
α
1
3-Lead TO-92 Plastic Package
HSMC Package Code: A
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
-
0.0142 0.0220
-
*0.0500
0.1323 0.1480
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
-
0.36
0.56
-
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
-
*0.1000
-
*0.0500
-
*5°
-
*2°
-
*2°
Millimeters
Min.
Max.
0.36
0.56
-
*2.54
-
*1.27
-
*5°
-
*2°
-
*2°
Notes:
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HPH2369
HSMC Product Specification
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