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5962R9570801VXX: 产品描述2KX8 OTPROM, 120ns, CDFP24; 产品类别存储存储; 文件大小137KB，共5页; 制造商Renesas(瑞萨电子); 官网地址https://www.renesas.com/

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5962R9570801VXX概述

2KX8 OTPROM, 120ns, CDFP24

5962R9570801VXX规格参数

参数名称	属性值
厂商名称	Renesas(瑞萨电子)
零件包装代码	DFP
包装说明	DFP,
针数	24
Reach Compliance Code	unknown
ECCN代码	EAR99
最长访问时间	100 ns
JESD-30 代码	R-CDFP-F24
内存密度	16384 bit
内存集成电路类型	OTP ROM
内存宽度	8
功能数量	1
端子数量	24
字数	2048 words
字数代码	2000
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	2KX8
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	DFP
封装形状	RECTANGULAR
封装形式	FLATPACK
并行/串行	PARALLEL
认证状态	Not Qualified
筛选级别	MIL-PRF-38535 Class V
座面最大高度	2.92 mm
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子形式	FLAT
端子节距	1.27 mm
端子位置	DUAL
总剂量	100k Rad(Si) V
宽度	9.905 mm
Base Number Matches	1

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HS-6617RH

Data Sheet

August 2000

File Number

3033.4

Radiation Hardened 2K x 8 CMOS PROM

The Intersil HS-6617RH is a radiation hardened 16K CMOS

PROM, organized in a 2K word by 8-bit format. The chip is

manufactured using a radiation hardened CMOS process,

and is designed to be functionally equivalent to the

HM-6617. Synchronous circuit design techniques combine

with CMOS processing to give this device high speed

performance with very low power dissipation.

On chip address latches are provided, allowing easy

interfacing with recent generation microprocessors that use

multiplexed address/data bus structure, such as the

HS-80C85RH or HS-80C86RH. The output enable control

(G) simpliﬁes microprocessor system interfacing by allowing

output data bus control, in addition to, the chip enable

control. Synchronous operation of the HS-6617RH is ideal

for high speed pipe-lined architecture systems and also in

synchronous logic replacement functions.

Applications for the HS-6617RH CMOS PROM include low

power microprocessor based instrumentation and

communications systems, remote data acquisition and

processing systems, processor control store, and

synchronous logic replacement.

Speciﬁcations for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed here must be used when ordering.

Detailed Electrical Speciﬁcations for these devices are

contained in SMD 5962-95708. A “hot-link” is provided

on our homepage for downloading.

http://www.intersil.com/spacedefense/space.htm

Features

• Electrically Screened to SMD # 5962-95708

• QML Qualiﬁed per MIL-PRF-38535 Requirements

• Total Dose . . . . . . . . . . . . . . . . . . . . . . 100 krad(Si) (Max)

• Latch-Up Free. . . . . . . . . . . . . . . . . . . . >1 x 10

rad(Si)/s

• Field Programmable

• Functionally Equivalent to HM-6617

• Pin Compatible with Intel 2716

• Low Standby Power . . . . . . . . . . . . . . . . . . . 1.1mW (Max)

• Low Operating Power . . . . . . . . . . . . 137.5mW/MHz (Max)

• Fast Access Time . . . . . . . . . . . . . . . . . . . . . . 100ns (Max)

• TTL Compatible Inputs/Outputs

• Synchronous Operation

• On Chip Address Latches

• Three-State Outputs

• Nicrome Fuse Links

• Easy Microprocessor Interfacing

• Military Temperature Range . . . . . . . . . . . -55

C to 125

Ordering Information

ORDERING NUMBER

5962R9570801QJC

5962R9570801QXC

5962R9570801VJC

5962R9570801VXC

HS1-6617RH/PROTO

HS9-6617RH/PROTO

INTERNAL

MKT. NUMBER

HS1-6617RH-8

HS9-6617RH-Q

HS1-6617RH-Q

HS9-6617RH-Q

HS1-6617RH/PROTO

HS9-6617RH/PROTO

TEMP. RANGE

(

-55 to 125

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143

Intersil and Design is a trademark of Intersil Corporation.

5962R9570801VXX相似产品对比

	5962R9570801VXX	5962R9570801QJX	5962R9570801VJX	5962R9570801QXX
描述	2KX8 OTPROM, 120ns, CDFP24	2KX8 OTPROM, 120ns, CDIP24	2KX8 OTPROM, 120ns, CDIP24	2KX8 OTPROM, 120ns, CDFP24
厂商名称	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)	Renesas(瑞萨电子)
包装说明	DFP,	DIP,	DIP,	,
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
最长访问时间	100 ns	100 ns	100 ns	120 ns
JESD-30 代码	R-CDFP-F24	R-CDIP-T24	R-CDIP-T24	R-CDFP-F24
内存密度	16384 bit	16384 bit	16384 bit	16384 bit
内存集成电路类型	OTP ROM	OTP ROM	OTP ROM	OTP ROM
内存宽度	8	8	8	8
功能数量	1	1	1	1
端子数量	24	24	24	24
字数	2048 words	2048 words	2048 words	2048 words
字数代码	2000	2000	2000	2000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	125 °C	125 °C	125 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C
组织	2KX8	2KX8	2KX8	2KX8
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK	IN-LINE	IN-LINE	FLATPACK
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	NO	NO	YES
技术	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	MILITARY	MILITARY
端子形式	FLAT	THROUGH-HOLE	THROUGH-HOLE	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL
总剂量	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V
Base Number Matches	1	1	1	1
零件包装代码	DFP	DIP	DIP	-
针数	24	24	24	-
封装代码	DFP	DIP	DIP	-
筛选级别	MIL-PRF-38535 Class V	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class V	-
座面最大高度	2.92 mm	5.72 mm	5.72 mm	-
端子节距	1.27 mm	2.54 mm	2.54 mm	-
宽度	9.905 mm	15.24 mm	15.24 mm	-

5962R9570801VXX

5962R9570801VXX概述

5962R9570801VXX规格参数

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