Standard SRAM, 16KX4, 25ns, CMOS, CQCC28, CERAMIC, LCC-28
| 参数名称 | 属性值 |
| 零件包装代码 | QLCC |
| 包装说明 | QCCN, |
| 针数 | 28 |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 25 ns |
| 其他特性 | AUTOMATIC POWER-DOWN |
| JESD-30 代码 | R-CQCC-N28 |
| JESD-609代码 | e0 |
| 长度 | 13.97 mm |
| 内存密度 | 65536 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 4 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 28 |
| 字数 | 16384 words |
| 字数代码 | 16000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 16KX4 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCN |
| 封装形状 | RECTANGULAR |
| 封装形式 | CHIP CARRIER |
| 并行/串行 | PARALLEL |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1.905 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | NO LEAD |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 宽度 | 8.89 mm |
| Base Number Matches | 1 |
| 5962-8971203ZA | 5962-8971204ZA | 5962-9059404ZA | 5962-9059402XA | 5962-8971202ZA | 5962-8971204XA | 5962-8971202XA | 5962-8971203XA | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 16KX4, 25ns, CMOS, CQCC28, CERAMIC, LCC-28 | Standard SRAM, 16KX4, 20ns, CMOS, CQCC28, CERAMIC, LCC-28 | Standard SRAM, 16KX4, 25ns, CMOS, CQCC28, CERAMIC, LCC-28 | Standard SRAM, 16KX4, 35ns, CMOS, CDIP28, 0.300 INCH, CERDIP-28 | Standard SRAM, 16KX4, 35ns, CMOS, CQCC28, CERAMIC, LCC-28 | Standard SRAM, 16KX4, 20ns, CMOS, CDIP28, 0.300 INCH, CERDIP-28 | Standard SRAM, 16KX4, 35ns, CMOS, CDIP28, 0.300 INCH, CERDIP-28 | Standard SRAM, 16KX4, 25ns, CMOS, CDIP28, 0.300 INCH, CERDIP-28 |
| 零件包装代码 | QLCC | QLCC | QLCC | DIP | QLCC | DIP | DIP | DIP |
| 包装说明 | QCCN, | QCCN, | QCCN, | 0.300 INCH, CERDIP-28 | QCCN, | DIP, | DIP, | DIP, |
| 针数 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| Reach Compliance Code | unknown | unknow | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| 最长访问时间 | 25 ns | 20 ns | 25 ns | 35 ns | 35 ns | 20 ns | 35 ns | 25 ns |
| 其他特性 | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN; TRANSPARENT WRITE | AUTOMATIC POWER-DOWN; TRANSPARENT WRITE | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN |
| JESD-30 代码 | R-CQCC-N28 | R-CQCC-N28 | R-CQCC-N28 | R-GDIP-T28 | R-CQCC-N28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 13.97 mm | 13.97 mm | 13.97 mm | 37.0205 mm | 13.97 mm | 37.0205 mm | 37.0205 mm | 37.0205 mm |
| 内存密度 | 65536 bit | 65536 bi | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| 字数 | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
| 字数代码 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 |
| 可输出 | YES | YES | YES | YES | YES | YES | YES | YES |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装代码 | QCCN | QCCN | QCCN | DIP | QCCN | DIP | DIP | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | IN-LINE | CHIP CARRIER | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1.905 mm | 1.905 mm | 1.905 mm | 5.08 mm | 1.905 mm | 5.08 mm | 5.08 mm | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | NO | YES | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | QUAD | QUAD | QUAD | DUAL | QUAD | DUAL | DUAL | DUAL |
| 宽度 | 8.89 mm | 8.89 mm | 8.89 mm | 7.62 mm | 8.89 mm | 7.62 mm | 7.62 mm | 7.62 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 输出特性 | 3-STATE | 3-STATE | - | - | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
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