OTP ROM, 1KX8, 25ns, MOS, PQCC28, PLASTIC, LCC-28
| 参数名称 | 属性值 |
| 零件包装代码 | QLCC |
| 包装说明 | QCCJ, |
| 针数 | 28 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 最长访问时间 | 25 ns |
| JESD-30 代码 | S-PQCC-J28 |
| 长度 | 11.5062 mm |
| 内存密度 | 8192 bit |
| 内存集成电路类型 | OTP ROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 28 |
| 字数 | 1024 words |
| 字数代码 | 1000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 1KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | QCCJ |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 并行/串行 | PARALLEL |
| 认证状态 | Not Qualified |
| 座面最大高度 | 4.57 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | MOS |
| 温度等级 | MILITARY |
| 端子形式 | J BEND |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 宽度 | 11.5062 mm |
| Base Number Matches | 1 |
| 53RS881NL | 53RS881ANS | 53RS881NS | 53RS881ANL | 53RS881AL | 63RS881L | |
|---|---|---|---|---|---|---|
| 描述 | OTP ROM, 1KX8, 25ns, MOS, PQCC28, PLASTIC, LCC-28 | OTP ROM, 1KX8, 20ns, MOS, PDIP24, 0.300 INCH, SKINNY, PLASTIC, DIP-24 | OTP ROM, 1KX8, 25ns, MOS, PDIP24, 0.300 INCH, SKINNY, PLASTIC, DIP-24 | OTP ROM, 1KX8, 20ns, MOS, PQCC28, PLASTIC, LCC-28 | OTP ROM, 1KX8, 20ns, MOS, CQCC28, LCC-28 | OTP ROM, 1KX8, 20ns, MOS, CQCC28, LCC-28 |
| 包装说明 | QCCJ, | DIP, | DIP, | QCCJ, | QCCN, | QCCN, |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 25 ns | 20 ns | 25 ns | 20 ns | 20 ns | 20 ns |
| JESD-30 代码 | S-PQCC-J28 | R-PDIP-T24 | R-PDIP-T24 | S-PQCC-J28 | S-CQCC-N28 | S-CQCC-N28 |
| 长度 | 11.5062 mm | 31.242 mm | 31.242 mm | 11.5062 mm | 11.43 mm | 11.43 mm |
| 内存密度 | 8192 bit | 8192 bit | 8192 bit | 8192 bit | 8192 bit | 8192 bit |
| 内存集成电路类型 | OTP ROM | OTP ROM | OTP ROM | OTP ROM | OTP ROM | OTP ROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 24 | 24 | 28 | 28 | 28 |
| 字数 | 1024 words | 1024 words | 1024 words | 1024 words | 1024 words | 1024 words |
| 字数代码 | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 75 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | - |
| 组织 | 1KX8 | 1KX8 | 1KX8 | 1KX8 | 1KX8 | 1KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCJ | DIP | DIP | QCCJ | QCCN | QCCN |
| 封装形状 | SQUARE | RECTANGULAR | RECTANGULAR | SQUARE | SQUARE | SQUARE |
| 封装形式 | CHIP CARRIER | IN-LINE | IN-LINE | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 4.57 mm | 5.715 mm | 5.715 mm | 4.57 mm | 2.54 mm | 2.54 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.25 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.75 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | NO | NO | YES | YES | YES |
| 技术 | MOS | MOS | MOS | MOS | MOS | MOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | COMMERCIAL EXTENDED |
| 端子形式 | J BEND | THROUGH-HOLE | THROUGH-HOLE | J BEND | NO LEAD | NO LEAD |
| 端子节距 | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | QUAD | DUAL | DUAL | QUAD | QUAD | QUAD |
| 宽度 | 11.5062 mm | 7.62 mm | 7.62 mm | 11.5062 mm | 11.43 mm | 11.43 mm |
| 零件包装代码 | QLCC | DIP | DIP | QLCC | - | - |
| 针数 | 28 | 24 | 24 | 28 | - | - |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - |
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