GaAs SP3T 2.5V High Power Switch
DC - 2.5 GHz
Preliminary
Feb 12 2002
MASWSS0033
Features
•
•
•
•
•
•
Low Harmonic Knee Voltage < 2.5V
Low Harmonics > 65 dBc at +34 dBm & 1 GHz
Low Insertion Loss 0.45 dB at 1 GHz
High Isolation 18.5 dB at 2 GHz
FQFP 12-lead 3x3mm Low Profile Package
0.5 micron GaAs pHEMT Process
Functional Schematic
GND
ANT
100 pF
PIN 1
V3
RF3
100 pF
GND
V1
RF1
100 pF
Description
M/A-COM’s MASWSS0033 is a GaAs PHEMT MMIC
SP3T high power switch in a low cost miniature FQFP
12-lead 3x3mm thin profile package. This package
represents a lower profile than standard FQFP style,
featuring a 0.8mm maximum thickness.
The MASWSS0033 is ideally suited for applications
where high power, low control voltage, low insertion
loss, high isolation, small size and low cost are re-
quired. Typical applications are for GSM and DCS
handset systems that connect separate transmit and
receive functions to a common antenna, as well othe
handset and related applications. This part can be
used in all systems operating up to 2.5 GHz requiring
high power at low control voltage.
The MASWSS0033 is fabricated using a 0.5 micron
gate length GaAs PHEMT process. The process fea-
tures full passivation for performance and reliability.
GND
GND
GND
RF2
100 pF
Pin Configuration
PIN
No.
1
2
3
4
PIN Name
V3
RF3
GND
GND
RF2
V2
GND
RF1
V1
GND
ANT
GND
GND (paddle)
Description
Control 3
RF Port 3
RF Ground
RF Ground
RF Port 2
Control 2
RF Ground
RF Port 1
Control 1
RF Ground
Antenna Port
RF Ground
RF Ground
Absolute Maximum Ratings
Parameter
Max Input Power (0.5 - 2.5 GHz,
2.5V Control)
Operating Voltage
Operating Temperature
Storage Temperature
1
5
6
7
8
9
10
11
12
13
Absolute
Maximum
+38 dBm
+8.5 volts
-40
o
C to +85
o
C
-65
o
C to +150
o
C
1. Exceeding any one or combination of these limits may
cause permanent damage.
V2
GaAs SP3T 2.5V High Power Switch
MASWSS0033
V 1.04
Parameter
Insertion Loss
Test Conditions
DC – 1 GHz
1 – 2 GHz
2 - 2.5 GHz
DC – 1 GHz
1 – 2 GHz
2 - 2.5 GHz
DC – 2.5 GHz
Vc = 0V/2.5V
1 GHz, P
IN
= +34 dBm, Vc = 0V/2.5V
1 GHz, P
IN
= +34 dBm, Vc = 0V/2.5V
10% to 90% RF, 90% to 10% RF
Two Tone +22 dBm, 1 MHz Spacing, 820 MHz,
Two Tone +19 dBm, 1 MHz Spacing, 1950 MHz,
Units
dB
dB
dB
dB
dB
dB
dB
dBm
dBc
dBc
µS
dBm
dBm
Min.
Typ.
0.5
0.6
0.8
Max.
0.65
0.8
1.0
Isolation
23
18
15
25
18.5
16
20
38
Return Loss
P1dB
2
nd
Harmonic
3
rd
Harmonic
Trise, Tfall
Cross Modulation
ANT - CELL
3
ANT - PCS
3
Cross Modulation
ANT - CELL
ANT - PCS
Ton, Toff
Transients
Gate Leakage
65
65
1
59
57
Two Tones +22 dBm @ 820 & 821 MHz,
One Tone –27 dBm @ 865 MHz
Two Tones +17 dBm @ 1950 & 1951 MHz,
One Tone –27 dBm @ 1870 MHz
50% control to 90% RF, and 50% control to 10% RF
In Band
|Vc| = 2.5V
dBm
dBm
µS
mV
uA
-108
TBD
1
10
100
2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 100 pF for
0.5 GHz - 2.5 GHz.
3.
IP3 slope versus input power is approximately 1.5:1.
Truth Table
4
V1
+2.5 to +5V
0 + 0.2V
0 + 0.2V
V2
0 + 0.2V
+2.5 to +5V
0 + 0.2V
V3
0 + 0.2V
0 + 0.2V
+2.5 to +5V
ANT– RF1
On
Off
Off
ANT - RF2
Off
On
Off
ANT - RF3
Off
Off
On
4.
External DC blocking capacitors are required on all RF ports
2
Specifications subject to change without notice.
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
GaAs SP3T 2.5V High Power Switch
Typical Performance Curves
Insertion Loss vs. Frequency,
25
o
C, 100 pF
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
0.5
1
1.5
2
2.5
MASWSS0033
V 1.04
Isolation vs. Frequency,
25
o
C, 100 pF
0
-5
-10
-15
-20
-25
-30
-35
0.5
1
Frequency (GHz)
Frequency (GHz)
1.5
2
2.5
Harmonic Rejection vs. Frequency,
25
o
C, 100 pF
-60
Pin = +34 dBm @ 1 GHz
-65
-70
3rd Harmonic
-75
2nd Harmonic
-80
-85
2
3
4
5
Vctrl (V)
3
Specifications subject to change without notice.
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
GaAs SP3T 2.5V High Power Switch
FQFP 12-lead 3x3 mm Low Profile
MASWSS0033
V 1.04
4
Specifications subject to change without notice.
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
GaAs SP3T 2.5V High Power Switch
Handling Procedures
The following precautions should be observed to avoid
damage:
MASWSS0033
V 1.04
Static Sensitivity
Gallium Arsenide Integrated Circuits are ESD sensitive
and can be damaged by static electricity. Proper ESD
techniques should be used when handling these devices.
Ordering Information
Part Number
MASWSS0033
MASWSS0033TR
MASWSS0033SMB
Package
FQFP-N 12-lead Thin Plastic Package
1000 piece reel
Sample Test Board
5
Specifications subject to change without notice.
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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