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A3PE600-2FGG484

产品描述FPGA - Field Programmable Gate Array ProASIC3
产品类别可编程逻辑器件    可编程逻辑   
文件大小6MB,共221页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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A3PE600-2FGG484概述

FPGA - Field Programmable Gate Array ProASIC3

A3PE600-2FGG484规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
包装说明BGA,
Reach Compliance Codecompliant
JESD-30 代码S-PBGA-B484
JESD-609代码e1
长度23 mm
湿度敏感等级3
可配置逻辑块数量13824
等效关口数量600000
端子数量484
最高工作温度70 °C
最低工作温度
组织13824 CLBS, 600000 GATES
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装形状SQUARE
封装形式GRID ARRAY
峰值回流温度(摄氏度)250
可编程逻辑类型FIELD PROGRAMMABLE GATE ARRAY
认证状态Not Qualified
座面最大高度2.44 mm
最大供电电压1.575 V
最小供电电压1.425 V
标称供电电压1.5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间40
宽度23 mm

文档预览

下载PDF文档
Revision 18
DS0097
ProASIC3 Flash Family FPGAs
with Optional Soft ARM Support
Features and Benefits
High Capacity
• 15 K to 1 M System Gates
• Up to 144 Kbits of True Dual-Port SRAM
• Up to 300 User I/Os
Advanced I/O
• 700 Mbps DDR, LVDS-Capable I/Os (A3P250 and above)
• 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation
• Wide Range Power Supply Voltage Support per JESD8-B,
Allowing I/Os to Operate from 2.7 V to 3.6 V
• Bank-Selectable I/O Voltages—up to 4 Banks per Chip
• Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V /
2.5 V / 1.8 V / 1.5 V, 3.3 V PCI / 3.3 V PCI-X
and LVCMOS
2.5 V / 5.0 V Input
• Differential I/O Standards: LVPECL, LVDS, B-LVDS, and
M-LVDS (A3P250 and above)
• I/O Registers on Input, Output, and Enable Paths
• Hot-Swappable and Cold Sparing I/Os
• Programmable Output Slew Rate
and Drive Strength
• Weak Pull-Up/-Down
• IEEE 1149.1 (JTAG) Boundary Scan Test
• Pin-Compatible Packages across the ProASIC3 Family
• Six CCC Blocks, One with an Integrated PLL
• Configurable Phase-Shift, Multiply/Divide, Delay Capabilities
and External Feedback
• Wide Input Frequency Range (1.5 MHz to 350 MHz)
• 1 Kbit of FlashROM User Nonvolatile Memory
• SRAMs and FIFOs with Variable-Aspect-Ratio 4,608-Bit RAM
Blocks (×1, ×2, ×4, ×9, and ×18 organizations)
• True Dual-Port SRAM (except ×18)
Reprogrammable Flash Technology
• 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS
Process
• Instant On Level 0 Support
• Single-Chip Solution
• Retains Programmed Design when Powered Off
High Performance
• 350 MHz System Performance
• 3.3 V, 66 MHz 64-Bit PCI
In-System Programming (ISP) and Security
• ISP Using On-Chip 128-Bit Advanced Encryption Standard
(AES) Decryption (except ARM
®
-enabled ProASIC
®
3 devices)
via JTAG (IEEE 1532–compliant)
• FlashLock
®
to Secure FPGA Contents
Clock Conditioning Circuit (CCC) and PLL
Low Power
• Core Voltage for Low Power
• Support for 1.5 V-Only Systems
• Low-Impedance Flash Switches
Embedded Memory
High-Performance Routing Hierarchy
• Segmented, Hierarchical Routing and Clock Structure
ARM Processor Support in ProASIC3 FPGAs
ProASIC3 Devices
A3P015
1
A3P030
A3P060 A3P125
A3P250
A3P400
A3P600
2
Cortex-M1 Devices
M1A3P250 M1A3P400
M1A3P600
System Gates
15,000
30,000
60,000 125,000
250,000
400,000
600,000
Typical Equivalent Macrocells
128
256
512
1,024
2,048
VersaTiles (D-flip-flops)
384
768
1,536
3,072
6,144
9,216
13,824
RAM Kbits (1,024 bits)
18
36
36
54
108
4,608-Bit Blocks
4
8
8
12
24
FlashROM Kbits
1
1
1
1
1
1
1
3
Secure (AES) ISP
Yes
Yes
Yes
Yes
Yes
Integrated PLL in CCCs
1
1
1
1
1
4
VersaNet Globals
6
6
18
18
18
18
18
I/O Banks
2
2
2
2
4
4
4
Maximum User I/Os
49
81
96
133
157
194
235
Notes:
1. A3P015 is not recommended for new designs.
2. Refer to the
Cortex-M1
product brief for more information.
3. AES is not available for Cortex-M1 ProASIC3 devices.
4. Six chip (main) and three quadrant global networks are available for A3P060 and above.
5. The M1A3P250 device does not support this package.
6. For higher densities and support of additional features, refer to the
ProASIC3E Flash Family FPGAs
datasheet.
7. Package not available.
• M1 ProASIC3 Devices—ARM
®
Cortex
®
-M1 Soft Processor
Available with or without Debug
A3P1000
M1A3P1000
1,000,000
24,576
144
32
1
Yes
1
18
4
300
† A3P015 and A3P030 devices do not support this feature.
‡ Supported only by A3P015 and A3P030 devices.
March 2016
© 2016 Microsemi Corporation
I

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