PD - 94434
AUTOMOTIVE MOSFET
IRF2204
Typical Applications
●
●
HEXFET
®
Power MOSFET
D
Electric Power Steering
14 Volts Automotive Electrical Systems
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 40V
G
S
Features
●
●
●
●
●
●
R
DS(on)
= 3.6mΩ
I
D
= 210A
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET
utilizes the lastest processing techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
210
150
850
330
2.2
± 20
460
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
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1
08/07/02
IRF2204
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
40
–––
–––
2.0
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.041
3.0
–––
–––
–––
–––
–––
–––
130
35
39
15
140
62
110
4.5
7.5
5890
1570
130
8000
1370
2380
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
3.6
mΩ V
GS
= 10V, I
D
= 130A
4.0
V
V
DS
= 10V, I
D
= 250µA
–––
S
V
DS
= 10V, I
D
= 130A
20
V
DS
= 40V, V
GS
= 0V
µA
250
V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
200
I
D
= 130A
52
nC V
DS
= 32V
59
V
GS
= 10V
–––
V
DD
= 20V
–––
I
D
= 130A
ns
–––
R
G
= 2.5Ω
–––
V
GS
= 10V
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 32V
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 210
showing the
A
G
integral reverse
––– ––– 850
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 130A, V
GS
= 0V
––– 68 100
ns
T
J
= 25°C, I
F
= 130A
––– 120 180
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
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IRF2204
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10000
TOP
I
D
, Drain-to-Source Current (A)
1000
BOTTOM
1000
I
D
, Drain-to-Source Current (A)
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
100
4.5V
4.5V
10
10
20µs PULSE WIDTH
T
J
= 25
°
C
1
0.1
1
10
100
20µs PULSE WIDTH
T
J
= 175
°
C
1
0.1
1
10
100
V
DS
Drain-to-Source Voltage (V)
,
V
DS
Drain-to-Source Voltage (V)
,
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
2.5
I
D
= 210A
ID , Drain-to-Source Current
(Α
)
T J = 175°C
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
1.5
100.00
T J = 25°C
1.0
0.5
10.00
4.0
5.0
6.0
VDS = 25V
20µs PULSE WIDTH
7.0
8.0
9.0
10.0
V
GS
= 10V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF2204
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
12
I
D
=
130A
V
DS
= 32V
V
DS
= 20V
10
10000
Ciss
Coss
1000
V
GS
, Gate-to-Source Voltage (V)
C, Capacitance(pF)
8
6
Crss
100
4
2
10
1
10
100
0
0
30
60
90
120
150
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T
J
= 175
°
C
100
ID, Drain-to-Source Current (A)
1000
I
SD
, Reverse Drain Current (A)
10
100
100µsec
1msec
T
J
= 25
°
C
1
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
VDS , Drain-toSource Voltage (V)
10msec
V
GS
= 0 V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
100
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF2204
250
LIMITED BY PACKAGE
V
DS
V
GS
R
G
R
D
200
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
150
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
100
Fig 10a.
Switching Time Test Circuit
50
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
(Z
thJC
)
D = 0.50
0.1
0.20
0.10
Thermal Response
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
+T
C
1
J
= P
DM
x Z
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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