SUSSEX
400 TO 1500 WATT BIPOLAR
TRANSIENT SUPPRESSOR
DUAL-DIE
12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: (941) 768-6800 FAX: (941) 768-6868
SEMICONDUCTOR, INC.
GLASS PASSIVATED SURFACE MOUNT BIPOLAR DUAL-DIE
400 TO 5000 WATT MAXIMUM POWER HANDLING
REVERSE VOLTAGES - 6.8 TO 440 VOLTS
400 TO 1500 WATT BIPOLAR
DUAL-DIE SPECIFICATIONS
♦
Exclusive Sussex Semiconductor Dual-Die
Technology
♦
Each Die Fully Glass Passivated: Needs No
Encapsulation
♦
Space Saving Substitute For SMA, SMB, and SMC
Packages
♦
Electrical Equivalent to P4KE, P6KE, SA, and 1.5KE
Series Axial Leaded Devices
♦
Bipolar
♦
Each Device Individually Inspected
♦
Available in Waffle Packs or Tape and Reel
♦
Operating Temperature: -65 to 150ºC
♦
Storage Temperature: -65 to 175ºC
♦
Metallization: Ni-Ni-Au
♦
Polarity:
6.8 to 10 Breakdown Volts (V
BR
)
A-Cathode
B-Anode
11 to 440 Breakdown Volts (V
BR
)
A-Anode
B-Cathode
TABLE 4A - DUAL-DIE DIMENSION SPECIFICATIONS
♦
ALL T OLER ANCES AR E ± .005"
♦
ALL DIME NS IONS AR E IN INCHES
SIZE CODE
D1.5
D2
D3
D16
C
0.055
0.070
0.085
0.115
D
0.040
0.055
0.070
0.100
E
0.110
0.140
0.160
0.230
F
0.015
0.015
0.015
0.015
CUSTOM ORDERING SPECIFIER
DIE SPECIFICATIONS
SZZD
AVAILABLESIZES
RATING
CODE
1.5
400 WATTS
2
500 WATTS
3
600 WATTS
16
1500 WATTS
-
-
-
CONTACT FACTORY FOR ELECTRICAL
SPECIFICATIONS ON CUSTOM PARTS
♦
DUAL DIE V
BR
IS MEASURED FROM A TO A.
V
BR
MEASURED FROM A TO B WILL RESULT IN A
LOWER V
BR
. CONTACT THE FACTORY FOR
SPECIFIC INFORMATION.
CLAMPING VOLTAGE
BIPOLAR TRANSIENT
SUPPRESSOR
REVERSE BREAKDOWN
DUAL DIE
VOLTAGE (V
BR
)
(NOTE 1)
STANDARD PART
LISTING ON PAGE:
PAGE 7-5,7-6
PAGE 7-8,7-9
PAGE 7-11,7-12
PAGE 7-14,7-15
NOTE 1:
NOTES
%TOLERANCE OF V
BR
‘A’-SIDE METALLIZATION
TOLERANCES
MA
TERIAL
CODE
CODE TOLERANCE
A
ALUMINUM
5
±5%
E
GOLD
10
±10%
BLANK NI-NI-AU
(STANDARD)
20
±20%
HIGHER POWER
RATINGS AVAILABLE.
CONTACT FACTORY FOR
DIE SPECIFICATIONS
7-4
SUSSEX
IN D U S T R Y
S T ANDAR D
PAR T
NU M B ER S
( N OT E 2 )
400 WATT TRANSIENT
SUPPRESSOR
DIE SPECIFICATIONS
12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: (941) 768-6800 FAX: (941) 768-6868
T AB L E 5 A - 4 0 0 W AT T T R AN S IE N T S U P P R E S S O R D IE E L E C T R IC AL S P E C IF IC AT IO N S
SU SSEX
O R D ER
CODE
REFE L T O
L OO S E R IP S
P A G E 7 - 7 F OR
S IN K
SOR P SE R
HI D !
S P E C IF IE R
SEMICONDUCTOR, INC.
( N OT E 1 )
400 W A T T
P4K E
S E R IE S
P4 K E6 .8
P4 K E6 .8 A
P4 K E7 .5
P4 K E7 .5 A
P4 K E8 .2
P4 K E8 .2 A
P4 K E9 .1
P4 K E9 .1 A
P4 K E1 0
P4 K E1 0 A
P4 K E1 1
P4 K E1 1 A
P4 K E1 2
P4 K E1 2 A
P4 K E1 3
P4 K E1 3 A
P4 K E1 5
P4 K E1 5 A
P4 K E1 6
P4 K E1 6 A
P4 K E1 8
P4 K E1 8 A
P4 K E2 0
P4 K E2 0 A
P4 K E2 2
P4 K E2 2 A
P4 K E2 4
P4 K E2 4 A
P4 K E2 7
P4 K E2 7 A
P4 K E3 0
P4 K E3 0 A
P4 K E3 3
P4 K E3 3 A
P4 K E3 6
P4 K E3 6 A
P4 K E3 9
P4 K E3 9 A
P4 K E4 3
P4 K E4 3 A
P4 K E4 7
P4 K E4 7 A
P4 K E5 1
ST AN D O F F
VO L T A G E
(V
S O
)
V o l ts
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10 .2 0
10 .5 0
11 .1 0
12 .1 0
12 .8 0
12 .9 0
13 .6 0
14 .5 0
15 .3 0
16 .2 0
17 .1 0
17 .8 0
18 .8 0
19 .4 0
20 .5 0
21 .8 0
23 .1 0
24 .3 0
25 .6 0
26 .8 0
28 .2 0
29 .1 0
30 .8 0
31 .6 0
33 .3 0
34 .8 0
36 .8 0
38 .1 0
40 .2 0
41 .3 0
MA X.
R EVER SE
L EAK A G E
(I
R
)@ V
S O
( N OT E 3 )
RE V E RSE
BRE AKDO W N
V O LTAGE
( V
B R
) @ I
T
(N O T E 4 )
M A X . C L A M P IN G
MA X. T EMP.
V O L T A G E (V
C L
) @
T EST
P E AK P ULS E CURRE NT
C O EF F IC IEN T
C UR R ENT
( I
P P
)
(N O T E 5 )
µA
10 00
10 00
50 0
50 0
20 0
20 0
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
MIN .
V o l ts
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10 .5 0
10 .8 0
11 .4 0
11 .7 0
12 .4 0
13 .5 0
14 .3 0
14 .4 0
15 .2 0
16 .2 0
17 .1 0
18 .0 0
19 .0 0
19 .8 0
20 .9 0
21 .6 0
22 .8 0
24 .3 0
25 .7 0
27 .0 0
28 .5 0
29 .7 0
31 .4 0
32 .4 0
34 .2 0
35 .1 0
37 .1 0
38 .7 0
40 .9 0
42 .3 0
44 .7 0
45 .9 0
MA X.
V o l ts
7.48
7.14
8.25
7.88
9.02
8.61
10 .0 0
9.55
11 .0 0
10 .5 0
12 .1 0
11 .6 0
13 .2 0
12 .6 0
14 .3 0
13 .7 0
16 .5 0
15 .8 0
17 .6 0
16 .8 0
19 .8 0
18 .9 0
22 .0 0
21 .0 0
24 .2 0
23 .1 0
26 .4 0
25 .2 0
29 .7 0
28 .4 0
33 .0 0
31 .5 0
36 .3 0
34 .7 0
39 .6 0
37 .8 0
42 .9 0
41 .0 0
47 .3 0
45 .2 0
51 .7 0
49 .4 0
56 .1 0
(I
T
)
mA
10
10
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
O F V
BR
V
CL
V o l ts
10 .8
10 .5
11 .7
11 .3
12 .5
12 .1
13 .8
13 .4
15 .0
14 .5
16 .2
15 .6
17 .3
16 .7
19 .0
18 .2
22 .0
21 .2
23 .5
22 .5
26 .5
25 .2
29 .1
27 .7
31 .9
30 .6
34 .7
33 .2
39 .0
37 .5
43 .5
41 .4
47 .7
45 .7
52 .0
49 .9
56 .4
53 .9
61 .9
59 .3
67 .8
64 .8
73 .5
I
PP
Amps
38 .0
40 .0
35 .0
37 .0
33 .0
34 .0
30 .0
31 .0
28 .0
29 .0
26 .0
27 .0
24 .0
25 .0
22 .0
23 .0
19 .0
20 .0
17 .8
18 .6
16 .0
16 .5
14 .0
15 .0
13 .0
13 .7
12 .0
12 .6
10 .7
11 .0
9.6
10 .0
8.8
9.0
8.0
8.4
7.4
7.7
6.7
7.0
6.2
6.4
5.7
(% / °C )
0.05 7
0.05 7
0.06 1
0.06 1
0.06 5
0.06 5
0.06 8
0.06 8
0.07 3
0.07 3
0.07 5
0.07 5
0.07 8
0.07 8
0.06 1
0.08 1
0.08 4
0.08 4
0.08 6
0.08 6
0.08 8
0.08 8
0.09 0
0.09 0
0.09 2
0.09 2
0.09 1
0.09 4
0.09 6
0.09 6
0.09 7
0.09 7
0.09 8
0.09 8
0.09 9
0.09 9
0.10 0
0.10 0
0.10 1
0.10 1
0.10 1
0.10 1
0.10 2
6.8- 10 .8 - 10
6.8- 10 .5 - 5
7.5- 11 .7 - 10
7.5- 11 .3 - 5
8.2- 12 .5 - 10
8.2- 12 .1 - 5
9.1- 13 .8 - 10
9.1- 13 .4 - 5
10 - 15 .0- 1 0
10 - 14 .5- 5
11 - 16 .2- 1 0
11 - 15 .6- 5
12 - 17 .3- 1 0
12 - 16 .7- 5
13 - 19 .0- 1 0
13 - 18 .2- 5
15 - 22 .0- 1 0
15 - 21 .2- 5
16 - 23 .5- 1 0
16 - 22 .5- 5
18 - 26 .5- 1 0
18 - 25 .2- 5
20 - 29 .1- 1 0
20 - 27 .7- 5
22 - 31 .9- 1 0
22 - 30 .6- 5
24 - 34 .7- 1 0
24 - 33 .2- 5
27 - 39 .1- 1 0
27 - 37 .5- 5
30 - 43 .5- 1 0
30 - 41 .4- 5
33 - 47 .7- 1 0
33 - 45 .7- 5
36 - 52 .0- 1 0
36 - 49 .9- 5
39 - 56 .4- 1 0
39 - 53 .9- 5
43 - 61 .9- 1 0
43 - 59 .3- 5
47 - 67 .8- 1 0
47 - 64 .8- 5
51 - 70 .1- 1 0
THIS TABLE CONTINUES
NOTE 1:
:
NOTE 2:
♦ELECTRICAL
CHARACTERISTICS ARE AT A JUNCTION TEMPERATURE (T
J
) OF 25°C
NOTES
3:
NOTE
NOTE 4:
NOTE 5:
♦INDUSTRY
STANDARD PART NUMBERS REFER TO PACKAGED DEVICES. THE DIES
INDICATED BY THESE NUMBERS, IF PROPERLY PACKAGED, WILL OPERATE WITH THE
SAME PERFORMANCE
♦FOR
BIPOLAR DEVICES WITH A V
BR
OF 10 VOLTS OR LESS, THE I
R
LIMIT IS
DOUBLED
♦DUAL
DIE V
BR
IS MEASURED FROM TOP TO TOP OF DIE. V
BR
MEASURED FROM TOP TO BOTTOM WILL RESULT IN A LOWER V
BR
♦SURGE
CURRENT WAVEFORM SHOWN IN FIGURE 2A ON PAGE 7-7
♦PEAK
PULSE POWER DERATING SHOWN IN FIGURE 3A ON PAGE 7-7
7-5
SUSSEX
IN D U S T R Y
S T ANDAR D
PAR T
NU M B ER S
( N OT E 2 )
400 WATT TRANSIENT
SUPPRESSOR
DIE SPECIFICATIONS
12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: (941) 768-6800 FAX: (941) 768-6868
T AB L E 5 A - 4 0 0 W AT T T R AN S IE N T S U P P R E S S O R D IE E L E C T R IC AL S P E C IF IC AT IO N S
SU SSEX
O R D ER
CODE
L R E F E RL IT O
OOS E
PS
P A GE I N -K F OR
S 7 7
OR D E
S H IP S !R
S P E C IF IE R
( N OT E 1 )
SEMICONDUCTOR, INC.
400 W A T T
P4K E
S E R IE S
P4KE51A
P4KE56
P4KE56A
P4KE62
P4KE62A
P4KE68
P4KE68A
P4KE75
P4KE75A
P4KE82
P4KE82A
P4KE91
P4KE91A
P4KE100
P4KE100A
P4KE110
P4KE110A
P4KE120
P4KE120A
P4KE130
P4KE130A
P4KE150
P4KE150A
P4KE160
P4KE160A
P4KE170
P4KE170A
P4KE180
P4KE180A
P4KE200
P4KE200A
P4KE220
P4KE220A
P4KE250
P4KE250A
P4KE300
P4KE300A
P4KE350
P4KE350A
P4KE400
P4KE400A
P4KE440
P4KE440A
ST A N D O F F
VO L T A G E
(V
S O
)
V o l ts
43.60
45.40
47.80
50.20
53.00
55.10
58.10
60.70
64.10
66.40
70.10
73.70
77.80
81.00
85.50
89.20
94.00
97.20
102.00
105.00
111.00
121.00
128.00
130.00
136.00
138.00
145.00
146.00
154.00
162.00
171.00
175.00
185.00
202.00
214.00
243.00
256.00
284.00
300.00
324.00
342.00
356.00
376.00
M A X.
R EVER SE
L EAKAG E
(I
R
)@ V
S O
( N OT E 3 )
RE V E RS E
BRE AKDO W N
V O LTAG E
( V
B R
) @ I
T
(N O T E 4 )
M A X . C L A M P IN G
M A X. T EM P.
V O L T A G E (V
C L
) @
T EST
P E AK P ULS E C URR E NT
C O EF F IC IEN T
C U R R EN T
( I
P P
)
(N O T E 5 )
µA
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
M IN .
V o l ts
48.50
50.40
53.20
55.80
58.90
61.20
64.60
67.50
71.30
73.80
77.90
81.90
86.50
90.00
95.00
99.00
105.00
108.00
114.00
117.00
124.00
135.00
143.00
144.00
152.00
153.00
162.00
162.00
171.00
180.00
190.00
198.00
209.00
225.00
237.00
270.00
285.00
315.00
332.00
360.00
380.00
396.00
418.00
M A X.
V o l ts
53.60
61.60
58.80
68.80
65.10
74.80
71.40
82.50
78.80
90.20
86.10
100.00
95.50
110.00
105.00
121.00
116.00
132.00
126.00
143.00
137.00
165.00
158.00
176.00
168.00
187.00
179.00
198.00
189.00
220.00
210.00
242.00
231.00
275.00
267.00
330.00
315.00
385.00
368.00
440.00
420.00
484.00
462.00
(I
T
)
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
O F V
BR
V
CL
V o l ts
70.1
80.5
77.0
89.0
85.0
96.0
92.0
108.0
103.0
118.0
113.0
131.0
125.0
144.0
137.0
158.0
152.0
173.0
165.0
187.0
179.0
215.0
207.0
230.0
219.0
244.0
234.0
256.0
246.0
287.0
274.0
344.0
328.0
360.0
344.0
430.0
414.0
504.0
482.0
571.0
548.0
598.0
590.0
I
PP
Amps
6.0
5.2
5.4
4.7
5.0
4.2
4.5
3.8
4.0
3.5
3.7
3.2
3.3
2.9
3.0
2.6
2.7
2.4
2.5
2.2
2.3
1.9
2.0
1.8
1.9
1.7
1.8
1.6
1.7
1.4
1.51
1.2
1.3
1.1
1.2
0.97
1.0
0.83
0.87
0.73
0.76
0.66
0.69
(% / °C )
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
51- 70.1-5
56- 80.5-10
56- 77.0-5
62- 89.0-10
62- 85.0-5
68- 96.0-10
68- 92.0-5
75- 108.0-10
75- 103.0-5
82- 118.0-10
82- 113.0-5
91- 131.0-10
91- 125.0-5
100- 144.0-10
100- 137.0-5
110- 158.0-10
110- 152.0-5
120- 173.0-10
120- 165.0-5
130- 187.0-10
130- 179.0-5
150- 215.0-10
150- 207.0-5
160- 230.0-10
160- 219.0-5
170- 244.0-10
170- 234.0-5
180- 256.0-10
180- 246.0-5
200- 287.0-10
200- 274.0-5
220- 344.0-10
220- 328.0-5
250- 360.0-10
250- 344.0-5
300- 430.0-10
300- 414.0-5
350- 504.0-10
350- 482.0-5
400- 574.0-10
400- 548.0-5
440- 598.0-10
440- 590.0-5
NOTE 1:
:
NOTE 2:
♦ELECTRICAL
CHARACTERISTICS ARE AT A JUNCTION TEMPERATURE (T
J
) OF 25°C
NOTES
3:
NOTE
NOTE 4:
NOTE 5:
♦INDUSTRY
STANDARD PART NUMBERS REFER TO PACKAGED DEVICES. THE DIES
INDICATED BY THESE NUMBERS, IF PROPERLY PACKAGED, WILL OPERATE WITH THE
SAME PERFORMANCE
♦FOR
BIPOLAR DEVICES WITH A V
BR
OF 10 VOLTS OR LESS, THE I
R
LIMIT IS
DOUBLED
♦DUAL
DIE V
BR
IS MEASURED FROM TOP TO TOP OF DIE V
BR
MEASURED FROM TOP TO BOTTOM WILL RESULT IN A LOWER V
BR
♦SURGE
CURRENT WAVEFORM SHOWN IN FIGURE 1A ON PAGE 7-7
♦PEAK
PULSE POWER DERATING SHOWN IN FIGURE 2A ON PAGE 7-7
7-6
SUSSEX
6.8 - 10.8 - 10
400 WATT DIE SPECIFICATIONS
CONTINUED
12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: (941) 768-6800 FAX: (941) 768-6868
SEMICONDUCTOR, INC.
ORDERING SPECIFIER
10
4
FIGURE 1A - TYPICAL JUNCTION
CAPACITANCE
ORDER CODE FROM
PREVIOUS PAGES
JUNCTION CAPACITANCE (pF)
Tj=25 C
f= 1kHz
10
3
TABLE 6A - AVAILABLE DIE SIZES
DIE
CODE
DIE TYPE
SPECIFICATIONS
REFER TO:
SZU1.5
400 WATT UNIPOLAR DIE
PAGE 7-1
SZZ1.5
400 WATT BIPOLAR DIE
PAGE 7-2
SZUFD1.5 400 WATT UNIPOLAR FLIP-DIE PAGE 7-3
SZZD1.5 400 WATT BIPOLAR DUAL-DIE PAGE 7-4
10
2
M e asured @ 10 0m V
10
1
T H IS G RAP H DE M O N ST R AT E S T H E
P E R FO R M AN C E O F A U N IPO LAR D IE.
B IPO L AR D IE S W ILL H A VE A L O W E R
C A P A CITA N C E
C O N T AC T FA CT O R Y FO R M O R E
DE TA ILE D INF O R M A T IO N
M easu red @ V so
10
0
10
0
10
1
10
2
10
3
BREAKDOWN VOLTAGE, V
BR
(Volts)
FIGURE 2A - PULSE WAVEFORM
150
41 00
00
FIGURE 3A - PULSE DERATING CURVE
PEAK PULSE POWER (WATTS)
% PEAK PULSE CURRENT, I
PP
10:1000 W AVEFORM
I
100
3 00
PP
75
N O N -REPE T IT IV E
C U RR EN T PU LS E
PE R F IG U RE 2A
2 00
50
½ I
50
PP
1 00
25
0
0
1
2
3
0
0
25
50
75
1 00
1 25
1 50
1 75
2 00
TIME (ms)
JUNCTION TEMPERATURE, T
J
(°C)
7-7
SUSSEX
IN D U S T R Y
S T ANDAR D
PAR T
NU M B ER S
500 WATT TRANSIENT
SUPPRESSOR
DIE SPECIFICATIONS
12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: (941) 768-6800 FAX: (941) 768-6868
T A B L E 7 A - 5 0 0 W A T T T R A N S IE N T S U P P R E S S O R D IE E L E C T R IC A L S P E C IF IC A T IO N S
SU SSEX
ST A N D O F F
O R D ER C O D E
VO L T A G E
REFER T O
L OOS E L IP S
P A GE 7 - 1 0 F OR
S IN K
OR D E R
S H IP S !
S P E C IF IE R
SEMICONDUCTOR, INC.
( N OT E 1 )
MA X.
R EVER SE
L EA K A G E
(I
R
)@ V
S O
( N OT E 3 )
RE V E RS E
BRE AKDO W N
V O L T A G E ( V
B R
) @ I
T
( N OT E 4 )
T EST
C UR REN T
(I
T
)
M A X . C L A M P IN G
V O L TA G E (V
C L
) @
P E AK P ULS E
C U R R E N T ( I
P P
)
( N OT E 5 )
MA X. T EMP.
C O EF F IC IEN T
O F V
BR
( N OT E 2 )
(V
S O
)
V o l ts
5
5
6
6
6.5
6.5
7
7
7.5
7.5
8
8
8.5
8.5
9
9
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
500 W A T T
S A S E R IE S
µA
60 0
60 0
60 0
60 0
40 0
40 0
15 0
15 0
50
50
25
25
10
10
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
M IN .
V o l ts
6.4
6.4
6.7
6.7
7.2
7.2
7.8
7.8
8.3
8.3
8.9
8.9
9.4
9.4
10 .0
10 .0
11 .1
11 .1
12 .2
12 .2
13 .3
13 .3
14 .4
14 .4
15 .6
15 .6
16 .7
16 .7
17 .8
17 .8
18 .9
18 .9
20 .0
20 .0
22 .2
22 .2
24 .4
24 .4
26 .7
26 .7
28 .9
28 .9
31 .1
31 .1
33 .3
33 .3
MA X.
V o l ts
7.3
7.0
8.2
7.4
8.8
8.0
9.5
8.6
10 .2
9.2
10 .9
9.8
11 .5
10 .4
12 .2
11 .1
13 .6
12 .3
14 .9
13 .5
16 .3
14 .7
17 .6
15 .9
19 .1
17 .2
20 .4
18 .5
21 .8
19 .7
23 .1
20 .9
24 .4
22 .1
27 .1
24 .5
29 .8
26 .9
32 .6
29 .5
35 .3
31 .9
38 .0
34 .4
40 .7
36 .8
mA
10
10
10
10
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
CL
V o l ts
9.6
9.2
11 .4
10 .3
12 .3
11 .2
13 .3
12 .0
14 .3
12 .9
15 .0
13 .6
15 .9
14 .4
16 .9
15 .4
18 .8
17 .0
20 .1
18 .2
22 .0
19 .9
23 .8
21 .5
25 .8
23 .2
26 .9
24 .4
28 .8
26 .0
30 .5
27 .6
32 .2
29 .2
35 .8
32 .4
39 .4
35 .5
43 .0
38 .9
46 .6
42 .1
50 .1
45 .4
53 .5
48 .4
I
PP
Amps
54 .0
57 .0
46 .0
50 .0
42 .0
46 .0
39 .0
43 .0
36 .0
40 .0
35 .0
38 .0
33 .0
36 .0
31 .0
34 .0
27 .0
30 .0
26 .0
28 .0
23 .0
26 .3
22 .0
24 .0
20 .3
22 .6
19 .5
21 .0
18 .0
20 .0
17 .0
19 .0
16 .3
17 .9
14 .0
16 .0
13 .0
14 .7
12 .0
13 .4
11 .0
12 .4
10 .0
11 .5
9.8
10 .8
(m V / ° C )
5.00
5.00
5.00
5.00
5.00
5.00
6.00
6.00
7.00
7.00
7.00
7.00
8.00
8.00
9.00
9.00
10 .00
10 .00
11 .00
11 .00
12 .00
12 .00
13 .00
13 .00
14 .00
14 .00
16 .00
16 .00
19 .00
17 .00
20 .00
19 .00
21 .00
20 .00
25 .00
23 .00
28 .00
25 .00
31 .00
28 .00
31 .00
30 .00
35 .00
31 .00
39 .00
36 .00
S A 5 .0
S A 5 .0A
S A 6 .0
S A 6 .0A
S A 6 .5
S A 6 .5A
S A 7 .0
S A 7 .0A
S A 7 .5
S A 7 .5A
S A 8 .0
S A 8 .0A
S A 8 .5
S A 8 .5A
SA9
S A 9 .0A
S A 10
S A 1 0A
S A 11
S A 1 1A
S A 12
S A 1 2A
S A 13
S A 1 3A
S A 14
S A 1 4A
S A 15
S A 1 5A
S A 16
S A 1 6A
S A 17
S A 1 7A
S A 18
S A 1 8A
S A 20
S A 2 0A
S A 22
S A 2 2A
S A 24
S A 2 4A
S A 26
S A 2 6A
S A 28
S A 2 8A
S A 30
S A 3 0A
6.8- 9.6- 6.5
6.7- 9.2- 4.4
6.4- 11.4 -9 .9
7.0- 10.3 -4 .9
8.0- 12.3 -9 .9
7.6- 11.2 -5
8.6- 13.3 -1 0
8.1- 12- 5
9.2- 143 -1 0
8.7- 12.9 -5
9.8- 15- 10
9.3- 13.6 -5
10 .4- 15 .9- 9.8
9.9- 14.4 -4 .8
11 .1- 16 9- 9.9
10 .5- 15 .4- 5.2
12 .3- 18 .8- 10
11 .7- 17 -5 .1
13 .5- 20 .1- 9.9
12 .8- 18 .2- 5
14 .8- 22 -1 0
14 -1 9.9 -5
16 -2 3.8 -1 0
15 .1- 21 .5- 4.9
17 .3- 25 8- 10
16 .4- 23 .2- 4.8
18 .5- 26 .9- 9.9
17 .6- 24 .4- 5.1
19 .8- 28 8- 10.1
18 .7- 26 -5
21 -3 0.5 -1 0
19 .9- 27 .6- 5
22 .2- 32 .2- 9.9
21 .0- 29 .2- 4.9
24 .6- 35 .8- 9.9
23 .3- 32 .4- 4.9
27 .1- 39 .4- 9.9
25 .6- 35 .5- 4.8
29 .6- 43 -9 .9
28 .1- 38 .9- 4.9
32 .1- 46 .6- 9.9
30 .4- 42 .1- 4.9
34 .5- 50 .1- 9.9
32 .7- 45 .4- 5
37 -5 3.5 -1 0
35 .0- 48 .4- 4.9
THIS TABLE CONTINUES
NOTE 1:
:
NOTE 2:
♦ELECTRICAL
CHARACTERISTICS ARE AT A JUNCTION TEMPERATURE (T
J
) OF 25°C
NOTES
3:
NOTE
NOTE 4:
NOTE 5:
♦INDUSTRY
STANDARD PART NUMBERS REFER TO PACKAGED DEVICES. THE DIES
INDICATED BY THESE NUMBERS, IF PROPERLY PACKAGED, WILL OPERATE WITH THE
SAME PERFORMANCE
♦FOR
BIPOLAR DEVICES WITH A V
BR
OF 10 VOLTS OR LESS, THE I
R
LIMIT IS
DOUBLED
♦DUAL
DIE V
BR
IS MEASURED FROM TOP TO TOP OF DIE V
BR
MEASURED
FROM TOP TO BOTTOM WILL RESULT IN A LOWER V
BR
♦SURGE
CURRENT WAVEFORM SHOWN IN FIGURE 2A ON PAGE 7-10
♦PEAK
PULSE POWER DERATING SHOWN IN FIGURE 3A ON PAGE 7-10
7-8
传感器
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