IFN5199,IFN5199 pdf中文资料,IFN5199引脚图,IFN5199电路-Datasheet-电子工程世界

IFN5199: 产品描述Voltage References Ultra-High-Precision Ultra-Low-Noise; 产品类别半导体分立半导体; 文件大小472KB，共1页; 制造商InterFET; 官网地址http://www.interfet.com/

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Voltage References Ultra-High-Precision Ultra-Low-Noise

参数名称	属性值
产品种类 Product Category	JFET
制造商 Manufacturer	InterFET
RoHS	Details
技术 Technology	Si
安装风格 Mounting Style	Through Hole
封装 / 箱体 Package / Case	TO-71-3
Transistor Polarity	N-Channel
Configuration	Dual
Vds - Drain-Source Breakdown Voltage	20 V
Vgs - Gate-Source Breakdown Voltage	- 50 V
Drain-Source Current at Vgs=0	7 mA
Id - Continuous Drain Current	- 200 uA
Pd-功率耗散 Pd - Power Dissipation	250 mW
系列 Packaging	Bulk
Forward Transconductance - Min	1 mS
Gate-Source Cutoff Voltage	- 4 V
工厂包装数量 Factory Pack Quantity	79
类型 Type	JFET

	IFN5199	IFN5198	IFN5197
描述	Voltage References Ultra-High-Precision Ultra-Low-Noise	JFET JFET N-Channel Dual	JFET JFET N-Channel Dual
产品种类 Product Category	JFET	JFET	JFET
制造商 Manufacturer	InterFET	InterFET	InterFET
RoHS	Details	Details	Details
技术 Technology	Si	Si	Si
安装风格 Mounting Style	Through Hole	Through Hole	Through Hole
封装 / 箱体 Package / Case	TO-71-3	TO-71-3	TO-71-3
Transistor Polarity	N-Channel	N-Channel	N-Channel
Configuration	Dual	Dual	Dual
Vds - Drain-Source Breakdown Voltage	20 V	20 V	20 V
Vgs - Gate-Source Breakdown Voltage	- 50 V	- 50 V	- 50 V
Drain-Source Current at Vgs=0	7 mA	7 mA	7 mA
Id - Continuous Drain Current	- 200 uA	- 200 uA	- 200 uA
Pd-功率耗散 Pd - Power Dissipation	250 mW	250 mW	250 mW
系列 Packaging	Bulk	Bulk	Bulk
Forward Transconductance - Min	1 mS	1 mS	1 mS
Gate-Source Cutoff Voltage	- 4 V	- 4 V	- 4 V
工厂包装数量 Factory Pack Quantity	79	55	40
类型 Type	JFET	JFET	JFET

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