JFET JFET N-Channel Dual
参数名称 | 属性值 |
产品种类 Product Category | JFET |
制造商 Manufacturer | InterFET |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | Through Hole |
封装 / 箱体 Package / Case | TO-71-3 |
Transistor Polarity | N-Channel |
Configuration | Dual |
Vds - Drain-Source Breakdown Voltage | 20 V |
Vgs - Gate-Source Breakdown Voltage | - 50 V |
Drain-Source Current at Vgs=0 | 7 mA |
Id - Continuous Drain Current | - 200 uA |
Pd-功率耗散 Pd - Power Dissipation | 250 mW |
系列 Packaging | Bulk |
Forward Transconductance - Min | 1 mS |
Gate-Source Cutoff Voltage | - 4 V |
工厂包装数量 Factory Pack Quantity | 40 |
类型 Type | JFET |
IFN5197 | IFN5199 | IFN5198 | |
---|---|---|---|
描述 | JFET JFET N-Channel Dual | Voltage References Ultra-High-Precision Ultra-Low-Noise | JFET JFET N-Channel Dual |
产品种类 Product Category |
JFET | JFET | JFET |
制造商 Manufacturer |
InterFET | InterFET | InterFET |
RoHS | Details | Details | Details |
技术 Technology |
Si | Si | Si |
安装风格 Mounting Style |
Through Hole | Through Hole | Through Hole |
封装 / 箱体 Package / Case |
TO-71-3 | TO-71-3 | TO-71-3 |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Configuration | Dual | Dual | Dual |
Vds - Drain-Source Breakdown Voltage | 20 V | 20 V | 20 V |
Vgs - Gate-Source Breakdown Voltage | - 50 V | - 50 V | - 50 V |
Drain-Source Current at Vgs=0 | 7 mA | 7 mA | 7 mA |
Id - Continuous Drain Current | - 200 uA | - 200 uA | - 200 uA |
Pd-功率耗散 Pd - Power Dissipation |
250 mW | 250 mW | 250 mW |
系列 Packaging |
Bulk | Bulk | Bulk |
Forward Transconductance - Min | 1 mS | 1 mS | 1 mS |
Gate-Source Cutoff Voltage | - 4 V | - 4 V | - 4 V |
工厂包装数量 Factory Pack Quantity |
40 | 79 | 55 |
类型 Type |
JFET | JFET | JFET |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved