Si2307DS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
–30
r
DS(on)
(W)
0.080 @ V
GS
= –10 V
0.140 @ V
GS
= –4.5 V
I
D
(A)
–3
–2
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
Si2307DS (A7)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLSS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
–30
"20
–3
–2.5
–12
–1.25
1.25
Unit
V
A
W
0.8
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t
v
5 sec
Steady State
Notes
a. Surface mounted on FR4 board.
b. t
v
5 sec.
Document Number: 70843
S-60570—Rev. A, 16-Nov-98
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Symbol
R
thJA
Typical
Maximum
100
Unit
_C/W
130
2-1
Si2307DS
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED
)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-Resistance
Drain Source On Resistance
a
Forward Transconductance
a
Diode Forward Voltage
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= –10
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –24 V, V
GS
= 0 V
T
J
= 55
_
C
V
DS
v
–5 V, V
GS
= –10 V
V
GS
= –10 V, I
D
= –3 A
V
GS
= –4.5 V, I
D
= –2.5 A
V
DS
= –10V, I
D
= –3 A
I
S
= –1.25 A, V
GS
= 0 V
–6
0.064
0.103
4.5
–1.2
0.080
W
0.140
S
V
–30
V
–1.0
"100
–1
–10
mA
A
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= –15 V, V
GS
= 0, f = 1 MHz
15 V
0
MH
V
DS
= –15 V, V
GS
= –10 V
15 V
10
I
D
^
–3 A
3
10
1.9
2
565
126
75
pF
F
15
nC
C
Switching
b
Turn-On Time
t
d(on)
t
r
Turn-Off Time
t
d(off)
t
f
Notes
a. Pulse test: PW
v300
ms
duty cycle
v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
V
DD
= –15 V, R
L
= 15
W
15 V
I
D
^
–1.0 A, V
GEN
= –10 V
R
G
= 6
W
10
9
27
7
20
20
ns
50
16
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Document Number: 70843
S-60570—Rev. A, 16-Nov-98
Si2307DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
12
Output Characteristics
V
GS
= 10 thru 5 V
12
Transfer Characteristics
T
C
= –55_C
10
I
D
– Drain Current (A)
I
D
– Drain Current (A)
4V
8
10
25_C
8
125_C
6
6
4
3V
2
4
2
0
0
2
4
6
8
10
0
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
800
700
C
iss
r
DS(on)
– On-Resistance (
W
)
0.4
C – Capacitance (pF)
600
500
400
300
200
100
V
GS
= 10 V
0
0
2
4
6
8
10
0
0
6
C
rss
Capacitance
0.2
V
GS
= 4.5 V
C
oss
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
V
DS
= 15 V
I
D
= 3 A
V
GS
– Gate-to-Source Voltage (V)
8
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 3 A
1.4
r
DS(on)
– On-Resistance
(Normalized)
0
2
4
6
8
10
6
1.2
4
1.0
2
0.8
0
0.6
–50
0
50
100
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70843
S-60570—Rev. A, 16-Nov-98
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FaxBack 408-970-5600
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Si2307DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
1.0
10.0
r
DS(on)
– On-Resistance (
W
)
0.8
On-Resistance vs. Gate-to-Source Voltage
I
S
– Source Current (A)
T
J
= 150_C
1.0
T
J
= 25_C
0.6
I
D
= –3 A
0.4
0.2
0.1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
0.6
Threshold Voltage
12
10
Single Pulse Power
0.4
V
GS(th)
Variance (V)
8
I
D
= 250
mA
0.0
Power (W)
0.2
6
T
A
= 25_C
Single Pulse
4
–0.2
2
–0.4
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
1
10
Time (sec)
100
500
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1.00
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.10
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 130_C/W
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
500
Square Wave Pulse Duration (sec)
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Document Number: 70843
S-60570—Rev. A, 16-Nov-98
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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