| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| NVMFS5A140PLZ | ON Semiconductor(安森美) | Power MOSFET | 下载 |
| NVMFS5A140PLZT1G | ON Semiconductor(安森美) | MOSFET -40V4.2MOHMSINGLE | 下载 |
| NVMFS5A140PLZT3G | ON Semiconductor(安森美) | MOSFET -40V4.2MOHMSINGLE | 下载 |
| NVMFS5A140PLZWFT1G | ON Semiconductor(安森美) | -40V4.2MOHMSINGLE | 下载 |
| NVMFS5A140PLZWFT3G | ON Semiconductor(安森美) | MOSFET -40V4.2MOHMSINGLE | 下载 |
| NVMFS5A160PLZ | ON Semiconductor(安森美) | Power MOSFET | 下载 |
| NVMFS5A160PLZT1G | ON Semiconductor(安森美) | MOSFET -60V7.7MOHMSINGLE | 下载 |
| NVMFS5A160PLZT3G | ON Semiconductor(安森美) | -60V7.7MOHMSINGLE | 下载 |
| NVMFS5A160PLZWFT1G | ON Semiconductor(安森美) | -60V7.7MOHMSINGLE | 下载 |
| NVMFS5A160PLZWFT3G | ON Semiconductor(安森美) | -60V7.7MOHMSINGLE | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| NVMFS5A160PLZT1G 、 NVMFS5A160PLZT3G 、 NVMFS5A160PLZWFT1G 、 NVMFS5A160PLZWFT3G | 下载文档 |
| NVMFS5A140PLZT1G 、 NVMFS5A140PLZT3G 、 NVMFS5A140PLZWFT1G 、 NVMFS5A140PLZWFT3G | 下载文档 |
| 型号 | NVMFS5A140PLZT1G | NVMFS5A140PLZT3G | NVMFS5A140PLZWFT1G | NVMFS5A140PLZWFT3G |
|---|---|---|---|---|
| 描述 | MOSFET -40V4.2MOHMSINGLE | MOSFET -40V4.2MOHMSINGLE | -40V4.2MOHMSINGLE | MOSFET -40V4.2MOHMSINGLE |
| 系列 Packaging |
Reel | Reel | - | Reel |
| Product Attribute | Attribute Value | Attribute Value | - | Attribute Value |
| 制造商 Manufacturer |
ON Semiconductor(安森美) | ON Semiconductor(安森美) | - | ON Semiconductor(安森美) |
| 产品种类 Product Category |
MOSFET | MOSFET | - | MOSFET |
| RoHS | Details | Details | - | Details |
| 技术 Technology |
Si | Si | - | Si |
| 安装风格 Mounting Style |
SMD/SMT | SMD/SMT | - | SMD/SMT |
| 封装 / 箱体 Package / Case |
SO-8FL | SO-8FL | - | SO-8FL |
| Number of Channels | 1 Channel | 1 Channel | - | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | - | P-Channel |
| Vds - Drain-Source Breakdown Voltage | - 40 V | - 40 V | - | - 40 V |
| Id - Continuous Drain Current | - 140 A | - 140 A | - | - 140 A |
| Rds On - Drain-Source Resistance | 4.2 mOhms | 3.2 mOhms | - | 4.2 mOhms |
| Vgs th - Gate-Source Threshold Voltage | - 1.2 V | - 1.2 V | - | - 1.2 V |
| Vgs - Gate-Source Voltage | +/- 20 V | +/- 20 V | - | +/- 20 V |
| Qg - Gate Charge | 136 nC | 136 nC | - | 136 nC |
| 最小工作温度 Minimum Operating Temperature |
- 55 C | - 55 C | - | - 55 C |
| 最大工作温度 Maximum Operating Temperature |
+ 175 C | + 175 C | - | + 175 C |
| Configuration | Single Triple Source | Single Triple Source | - | Single Triple Source |
| Pd-功率耗散 Pd - Power Dissipation |
200 W | 200 W | - | 200 W |
| Channel Mode | Enhancement | Enhancement | - | Enhancement |
| 资格 Qualification |
AEC-Q100 | AEC-Q100 | - | AEC-Q100 |
| Transistor Type | 1 P-Channel Power MOSFET | 1 P-Channel Power MOSFET | - | 1 P-Channel Power MOSFET |
| Fall Time | 740 ns | 740 ns | - | 740 ns |
| Rise Time | 860 ns | 860 ns | - | 860 ns |
| 工厂包装数量 Factory Pack Quantity |
1500 | 5000 | - | 5000 |
| Typical Turn-Off Delay Time | 540 ns | 540 ns | - | 540 ns |
| Typical Turn-On Delay Time | 50 ns | 50 ns | - | 50 ns |
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