器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
K4T1G044QQ | SAMSUNG(三星) | 1Gb Q-die DDR2 SDRAM Specification | 下载 |
K4T1G044QQ-HCD60 | SAMSUNG(三星) | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | 下载 |
K4T1G044QQ-HCE6 | SAMSUNG(三星) | 1Gb Q-die DDR2 SDRAM Specification | 下载 |
K4T1G044QQ-HCE60 | SAMSUNG(三星) | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | 下载 |
K4T1G044QQ-HCE7 | SAMSUNG(三星) | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60 | 下载 |
K4T1G044QQ-HCE7T | SAMSUNG(三星) | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60 | 下载 |
K4T1G044QQ-HCF7 | SAMSUNG(三星) | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60 | 下载 |
K4T1G044QQ-HCF70 | SAMSUNG(三星) | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | 下载 |
K4T1G044QQ-HC(L)E6 | SAMSUNG(三星) | 1Gb Q-die DDR2 SDRAM Specification | 下载 |
K4T1G044QQ-HCLE6 | SAMSUNG(三星) | 1Gb Q-die DDR2 SDRAM Specification | 下载 |
K4T1G044QQ-HC(L)E7 | SAMSUNG(三星) | 1Gb Q-die DDR2 SDRAM Specification | 下载 |
K4T1G044QQ-HCLE7 | SAMSUNG(三星) | 1Gb Q-die DDR2 SDRAM Specification | 下载 |
K4T1G044QQ-HC(L)F7 | SAMSUNG(三星) | 1Gb Q-die DDR2 SDRAM Specification | 下载 |
K4T1G044QQ-HCLF7 | SAMSUNG(三星) | 1Gb Q-die DDR2 SDRAM Specification | 下载 |
K4T1G044QQ-HLD60 | SAMSUNG(三星) | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | 下载 |
K4T1G044QQ-HLE60 | SAMSUNG(三星) | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | 下载 |
K4T1G044QQ-HLE70 | SAMSUNG(三星) | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | 下载 |
K4T1G044QQ-HLE7T | SAMSUNG(三星) | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60 | 下载 |
K4T1G044QQ-HLF7 | SAMSUNG(三星) | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60 | 下载 |
K4T1G044QQ-HLF70 | SAMSUNG(三星) | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | 下载 |
K4T1G044QQ-HYE60 | SAMSUNG(三星) | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | 下载 |
K4T1G044QQ-HYE6T | SAMSUNG(三星) | DDR DRAM, 256MX4, 0.45ns, CMOS, PBGA60 | 下载 |
对应元器件 | pdf文档资料下载 |
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K4T1G044QQ-HCE7 、 K4T1G044QQ-HCE7T 、 K4T1G044QQ-HCF7 、 K4T1G044QQ-HLE7T 、 K4T1G044QQ-HLF7 | 下载文档 |
K4T1G044QQ 、 K4T1G044QQ-HC(L)E6 、 K4T1G044QQ-HC(L)E7 、 K4T1G044QQ-HC(L)F7 | 下载文档 |
K4T1G044QQ-HCE60 、 K4T1G044QQ-HLE60 、 K4T1G044QQ-HLF70 | 下载文档 |
K4T1G044QQ-HCLE6 、 K4T1G044QQ-HCLE7 、 K4T1G044QQ-HCLF7 | 下载文档 |
K4T1G044QQ-HCF70 、 K4T1G044QQ-HLE70 | 下载文档 |
K4T1G044QQ-HCD60 、 K4T1G044QQ-HLD60 | 下载文档 |
K4T1G044QQ-HYE60 、 K4T1G044QQ-HYE6T | 下载文档 |
K4T1G044QQ-HCE70 | 下载文档 |
型号 | K4T1G044QQ-HCE7 | K4T1G044QQ-HCE7T | K4T1G044QQ-HCF7 | K4T1G044QQ-HLE7T | K4T1G044QQ-HLF7 |
---|---|---|---|---|---|
描述 | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60 | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60 | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60 | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60 | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 |
厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
最长访问时间 | 0.4 ns | 0.4 ns | 0.4 ns | 0.4 ns | 0.4 ns |
最大时钟频率 (fCLK) | 400 MHz | 400 MHz | 400 MHz | 400 MHz | 400 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON |
交错的突发长度 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 |
JESD-30 代码 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 |
内存密度 | 1073741824 bit | 1073741824 bit | 1073741824 bit | 1073741824 bit | 1073741824 bit |
内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
内存宽度 | 4 | 4 | 4 | 4 | 4 |
端子数量 | 60 | 60 | 60 | 60 | 60 |
字数 | 268435456 words | 268435456 words | 268435456 words | 268435456 words | 268435456 words |
字数代码 | 256000000 | 256000000 | 256000000 | 256000000 | 256000000 |
组织 | 256MX4 | 256MX4 | 256MX4 | 256MX4 | 256MX4 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | FBGA | FBGA | FBGA | FBGA | FBGA |
封装等效代码 | BGA60,9X11,32 | BGA60,9X11,32 | BGA60,9X11,32 | BGA60,9X11,32 | BGA60,9X11,32 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH |
电源 | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 8192 | 8192 | 8192 | 8192 | 8192 |
连续突发长度 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 |
最大压摆率 | 0.245 mA | 0.245 mA | 0.245 mA | 0.245 mA | 0.245 mA |
标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
表面贴装 | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
端子形式 | BALL | BALL | BALL | BALL | BALL |
端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
包装说明 | - | FBGA, BGA60,9X11,32 | - | FBGA, BGA60,9X11,32 | FBGA, BGA60,9X11,32 |
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