| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| JANTX2N6764 | Omnirel Corp | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | 下载 |
| JANTX2N6764 | Harris | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | 下载 |
| JANTX2N6764 | Defense Logistics Agency | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN | 下载 |
| JANTX2N6764 | Infineon(英飞凌) | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | 下载 |
| JANTX2N6764 | International Rectifier ( Infineon ) | POWER, FET | 下载 |
| JANTX2N6764 | Microsemi | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN | 下载 |
| JANTX2N6764 | Motorola ( NXP ) | 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | 下载 |
| JANTX2N6764 | Intersil ( Renesas ) | 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | 下载 |
| JANTX2N6764_15 | International Rectifier ( Infineon ) | Repetitive Avalanche Ratings | 下载 |
| JANTX2N6764T1 | Microsemi | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | 下载 |
Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
| 参数名称 | 属性值 |
| 厂商名称 | Harris |
| 包装说明 | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | RADIATION HARDENED |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (ID) | 38 A |
| 最大漏源导通电阻 | 0.055 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 500 pF |
| JEDEC-95代码 | TO-204AE |
| JESD-30 代码 | O-MBFM-P2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | METAL |
| 封装形状 | ROUND |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL |
| 功耗环境最大值 | 150 W |
| 最大脉冲漏极电流 (IDM) | 70 A |
| 认证状态 | Not Qualified |
| 参考标准 | MILITARY STANDARD (USA) |
| 表面贴装 | NO |
| 端子形式 | PIN/PEG |
| 端子位置 | BOTTOM |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 最大关闭时间(toff) | 225 ns |
| 最大开启时间(吨) | 135 ns |
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