Datasheet> 器件分类 > 分立半导体> 晶体管> JANTX2N6764

JANTX2N6764: 产品描述Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN; 产品类别分立半导体晶体管; 文件大小947KB，共9页; 制造商Microsemi; 官网地址https://www.microsemi.com

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JANTX2N6764概述

Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN

POWER, 场效应晶体管

JANTX2N6764规格参数

参数名称	属性值
是否Rohs认证	不符合
Objectid	1811388795
零件包装代码	BFM
包装说明	FLANGE MOUNT, O-MBFM-P2
针数	2
Reach Compliance Code	not_compliant
ECCN代码	EAR99
Samacsys Manufacturer	Microsemi Corporation
Samacsys Modified On	2022-10-08 06:21:05
雪崩能效等级（Eas）	150 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V
最大漏极电流 (ID)	38 A
最大漏源导通电阻	0.055 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-204AE
JESD-30 代码	O-MBFM-P2
JESD-609代码	e0
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
封装主体材料	METAL
封装形状	ROUND
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	152 A
认证状态	Qualified
参考标准	MIL-19500/543G
表面贴装	NO
端子面层	Tin/Lead (Sn/Pb)
端子形式	PIN/PEG
端子位置	BOTTOM
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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2N6764, 2N6766, 2N6768 and 2N6770

Qualified Levels:

JAN, JANTX, and

JANTXV

Available on

commercial

versions

N-CHANNEL MOSFET

Qualified per MIL-PRF-19500/543

DESCRIPTION

This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military

qualified up to the JANTXV level for high-reliability applications. These devices are also

available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other

transistor products to meet higher and lower power ratings with various switching speed

requirements in both through-hole and surface-mount packages.

Important:

For the latest information, visit our website

http://www.microsemi.com.

FEATURES

•

JEDEC registered 2N6764, 2N6766, 2N6768 and 2N6770 number series.

JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/543.

(See

part nomenclature

for all available options.)

RoHS compliant versions available (commercial grade only).

TO-204AE

(TO-3)

Package

Also available in:

TO-254AA package

(leaded)

2N6764T1 & 2N6770T1

APPLICATIONS / BENEFITS

•

Low-profile metal can design.

Military and other high-reliability applications.

MAXIMUM RATINGS

@ T

= +25 ºC unless otherwise stated

Parameters / Test Conditions

Junction & Storage Temperature Range

Thermal Resistance Junction-to-Case

Total Power Dissipation

@ T

= +25 °C

(1)

@ T

= +25 °C

Drain-Source Voltage, dc

2N6764

2N6766

2N6768

2N6770

Gate-Source Voltage, dc

(2)

Drain Current, dc @ T

= +25 ºC

2N6764

2N6766

2N6768

2N6770

(2)

Drain Current, dc @ T

= +100 ºC

2N6764

2N6766

2N6768

2N6770

(3)

Off-State Current (Peak Total Value)

2N6764

2N6766

2N6768

2N6770

Source Current

2N6764

2N6766

2N6768

2N6770

Notes featured on next page.

Symbol

stg

ӨJC

Value

-55 to +150

0.83

150

100

200

400

500

± 20

38.0

30.0

14.0

12.0

24.0

19.0

9.0

7.75

152

120

38.0

30.0

14.0

12.0

Unit

°C

C/W

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

A (pk)

T4-LDS-0101, Rev. 3 (121466)

Page 1 of 9

JANTX2N6764相似产品对比

	JANTX2N6764	JAN2N6764	JAN2N6766	JAN2N6770	JANTX2N6766	JANTX2N6770	JANTXV2N6764	JANTXV2N6766	JANTXV2N6770
描述	Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN	Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN	Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN	12 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA	30 A, 200 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE	POWER, FET	Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN	30 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3	12 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	BFM	BFM	BFM	TO-3	BFM	TO-3	BFM	BFM	TO-3
针数	2	2	2	2	2	2	2	2	2
Reach Compliance Code	not_compliant	not_compliant	unknown	unknow	unknow	compli	not_compliant	unknow	compli
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE
最小漏源击穿电压	100 V	100 V	200 V	500 V	200 V	500 V	100 V	200 V	500 V
最大漏极电流 (ID)	38 A	38 A	30 A	12 A	30 A	12 A	38 A	30 A	12 A
最大漏源导通电阻	0.055 Ω	0.055 Ω	0.085 Ω	0.4 Ω	0.065 Ω	0.4 Ω	0.055 Ω	0.085 Ω	0.4 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-204AE	TO-204AE	TO-204AE	TO-204AA	TO-204AE	TO-3	TO-204AE	TO-3	TO-3
JESD-30 代码	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0
元件数量	1	1	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO	NO
端子面层	Tin/Lead (Sn/Pb)	TIN LEAD	TIN LEAD OVER NICKEL	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
包装说明	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	TO-3, 2 PIN	TO-3, 2 PIN	TO-3, 2 PIN	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	-	FLANGE MOUNT, O-MBFM-P2
ECCN代码	EAR99	EAR99	EAR99	-	EAR99	-	EAR99	EAR99	-
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	-	DRAIN
最大脉冲漏极电流 (IDM)	152 A	152 A	120 A	48 A	-	-	70 A	-	-
参考标准	MIL-19500/543G	MIL-19500/543G	MIL-19500/543G	MIL-19500	MIL-19500/543	MIL-19500	MILITARY STANDARD (USA)	-	MIL-19500
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	-	SWITCHING	-	-

JANTX2N6764

JANTX2N6764在线购买

JANTX2N6764概述

JANTX2N6764规格参数

文档预览

JANTX2N6764相似产品对比

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