器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
IXTY8N65X2 | ISC | isc N-Channel MOSFET Transistor | 下载 |
IXTY8N65X2 | IXYS | MOSFET | 下载 |
MOSFET
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | IXYS |
产品种类 Product Category | MOSFET |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | TO-252-3 |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 8 A |
Rds On - Drain-Source Resistance | 500 mOhms |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Vgs - Gate-Source Voltage | 30 V |
Qg - Gate Charge | 12 nC |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single |
Pd-功率耗散 Pd - Power Dissipation | 150 W |
Channel Mode | Enhancement |
系列 Packaging | Tube |
Forward Transconductance - Min | 4.8 S |
Fall Time | 24 ns |
Rise Time | 28 ns |
工厂包装数量 Factory Pack Quantity | 70 |
Typical Turn-Off Delay Time | 53 ns |
Typical Turn-On Delay Time | 24 ns |
单位重量 Unit Weight | 0.081130 oz |
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