| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| IS42S32800G | ISSI(芯成半导体) | 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 | 下载 |
| IS42S32800G-6B | ISSI(芯成半导体) | 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 | 下载 |
| IS42S32800G-6B | Integrated Silicon Solution ( ISSI ) | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 | 下载 |
| IS42S32800G-6BI | ISSI(芯成半导体) | DRAM 256M 8Mx32 166Mhz SDRAM, 3.3v | 下载 |
| IS42S32800G-6BI | All Sensors | dram 256m 8mx32 166mhz Sdram, 3.3v | 下载 |
| IS42S32800G-6BI | Integrated Silicon Solution ( ISSI ) | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 | 下载 |
| IS42S32800G-6BI-TR | ISSI(芯成半导体) | DRAM 256M 8Mx32 166Mhz SDRAM, 3.3v | 下载 |
| IS42S32800G-6BL | All Sensors | dram 256m 8mx32 166mhz sdr sdrAM, 3.3V | 下载 |
| IS42S32800G-6BL | ISSI(芯成半导体) | DRAM 256M 8Mx32 166Mhz SDR SDRAM, 3.3V | 下载 |
| IS42S32800G-6BL | Integrated Silicon Solution ( ISSI ) | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 | 下载 |
| IS42S32800G-6BLI | Integrated Silicon Solution ( ISSI ) | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 | 下载 |
| IS42S32800G-6BLI | All Sensors | dram 256m 8mx32 166mhz sdr sdrAM, 3.3V | 下载 |
| IS42S32800G-6BLI | ISSI(芯成半导体) | DRAM 256M 8Mx32 166Mhz SDR SDRAM, 3.3V | 下载 |
| IS42S32800G-6BLI-TR | ISSI(芯成半导体) | DRAM 256M 8Mx32 166Mhz SDRAM, 3.3v | 下载 |
| IS42S32800G-6BLI-TR | All Sensors | dram 256m 8mx32 166mhz Sdram, 3.3v | 下载 |
| IS42S32800G-6BL-TR | All Sensors | dram 256m 8mx32 166mhz Sdram, 3.3v | 下载 |
| IS42S32800G-6BL-TR | ISSI(芯成半导体) | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, | 下载 |
| IS42S32800G-6B-TR | ISSI(芯成半导体) | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, | 下载 |
| IS42S32800G-75EB | Integrated Silicon Solution ( ISSI ) | Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 | 下载 |
| IS42S32800G-75EBI | Integrated Silicon Solution ( ISSI ) | Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 | 下载 |
| IS42S32800G-75EBL | Integrated Silicon Solution ( ISSI ) | Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 | 下载 |
| IS42S32800G-75EBLI | Integrated Silicon Solution ( ISSI ) | Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 | 下载 |
| IS42S32800G-75EBL-TR | ISSI(芯成半导体) | Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90 | 下载 |
| IS42S32800G-75EB-TR | ISSI(芯成半导体) | Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90 | 下载 |
| IS42S32800G-7B | Integrated Silicon Solution ( ISSI ) | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 | 下载 |
| IS42S32800G-7B | ISSI(芯成半导体) | 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 | 下载 |
| IS42S32800G-7BI | ISSI(芯成半导体) | DRAM 256M 8Mx32 143Mhz SDRAM, 3.3v | 下载 |
| IS42S32800G-7BI | Integrated Silicon Solution ( ISSI ) | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 | 下载 |
| IS42S32800G-7BI-TR | ISSI(芯成半导体) | DRAM 256M 8Mx32 143Mhz SDRAM, 3.3v | 下载 |
| IS42S32800G-7BL | ISSI(芯成半导体) | —— | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| IS42S32800G-6BL 、 IS42S32800G-6BL-TR 、 IS42S32800G-6BLI 、 IS42S32800G-6BLI-TR 、 IS42S32800G-7BL-TR 、 IS42S32800G-7BLI-TR | 下载文档 |
| IS42S32800G-6BI 、 IS42S32800G-6BL 、 IS42S32800G-6BLI 、 IS42S32800G-7BI 、 IS42S32800G-7BL 、 IS42S32800G-7BLI | 下载文档 |
| IS42S32800G-6BL 、 IS42S32800G-6BLI-TR 、 IS42S32800G-7BI 、 IS42S32800G-7BL 、 IS42S32800G-7BLI-TR | 下载文档 |
| IS42S32800G-6BL-TR 、 IS42S32800G-6BLI 、 IS42S32800G-7BI-TR 、 IS42S32800G-7BL-TR 、 IS42S32800G-7BLI | 下载文档 |
| IS42S32800G-75EB 、 IS42S32800G-75EBI 、 IS42S32800G-75EBL 、 IS42S32800G-75EBLI | 下载文档 |
| IS42S32800G-6B 、 IS42S32800G-6B-TR 、 IS42S32800G-7B | 下载文档 |
| IS42S32800G 、 IS42S32800G-6B 、 IS42S32800G-7B | 下载文档 |
| IS42S32800G-6BI | 下载文档 |
| IS42S32800G-6BI | 下载文档 |
| IS42S32800G-6BI-TR | 下载文档 |
| 型号 | IS42S32800G-6BI | IS42S32800G-6BL | IS42S32800G-6BLI | IS42S32800G-7BI | IS42S32800G-7BL | IS42S32800G-7BLI |
|---|---|---|---|---|---|---|
| 描述 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 |
| 是否Rohs认证 | 不符合 | 符合 | 符合 | 不符合 | 符合 | 符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
| 零件包装代码 | DSBGA | DSBGA | DSBGA | DSBGA | DSBGA | DSBGA |
| 包装说明 | TFBGA, BGA90,9X15,32 | 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 | TFBGA, BGA90,9X15,32 | 8 X 13 MM, MO-207, TFBGA-90 | TFBGA, BGA90,9X15,32 | 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 |
| 针数 | 90 | 90 | 90 | 90 | 90 | 90 |
| Reach Compliance Code | compli | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| 最长访问时间 | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 166 MHz | 166 MHz | 166 MHz | 143 MHz | 143 MHz | 143 MHz |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| 交错的突发长度 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
| JESD-30 代码 | R-PBGA-B90 | R-PBGA-B90 | R-PBGA-B90 | R-PBGA-B90 | R-PBGA-B90 | R-PBGA-B90 |
| 长度 | 13 mm | 13 mm | 13 mm | 13 mm | 13 mm | 13 mm |
| 内存密度 | 268435456 bi | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit |
| 内存集成电路类型 | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
| 内存宽度 | 32 | 32 | 32 | 32 | 32 | 32 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 90 | 90 | 90 | 90 | 90 | 90 |
| 字数 | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words |
| 字数代码 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 70 °C | 85 °C | 85 °C | 70 °C | 85 °C |
| 最低工作温度 | -40 °C | - | -40 °C | -40 °C | - | -40 °C |
| 组织 | 8MX32 | 8MX32 | 8MX32 | 8MX32 | 8MX32 | 8MX32 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
| 封装等效代码 | BGA90,9X15,32 | BGA90,9X15,32 | BGA90,9X15,32 | BGA90,9X15,32 | BGA90,9X15,32 | BGA90,9X15,32 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 |
| 座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| 自我刷新 | YES | YES | YES | YES | YES | YES |
| 连续突发长度 | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
| 最大待机电流 | 0.003 A | 0.003 A | 0.003 A | 0.003 A | 0.003 A | 0.003 A |
| 最大压摆率 | 0.35 mA | 0.35 mA | 0.35 mA | 0.27 mA | 0.27 mA | 0.27 mA |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 宽度 | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm |
| Factory Lead Time | - | 6 weeks | 6 weeks | 6 weeks | 6 weeks | 6 weeks |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved