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IS42S32800G

eeworld网站中关于IS42S32800G有37个元器件。有IS42S32800G、IS42S32800G-6B等。可以通过横向对比他们之间的异同,来寻找器件间替代的可能。
器件名 厂商 描 述 功能
IS42S32800G ISSI(芯成半导体) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 下载
IS42S32800G-6B ISSI(芯成半导体) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 下载
IS42S32800G-6B Integrated Silicon Solution ( ISSI ) Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 下载
IS42S32800G-6BI ISSI(芯成半导体) DRAM 256M 8Mx32 166Mhz SDRAM, 3.3v 下载
IS42S32800G-6BI All Sensors dram 256m 8mx32 166mhz Sdram, 3.3v 下载
IS42S32800G-6BI Integrated Silicon Solution ( ISSI ) Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 下载
IS42S32800G-6BI-TR ISSI(芯成半导体) DRAM 256M 8Mx32 166Mhz SDRAM, 3.3v 下载
IS42S32800G-6BL All Sensors dram 256m 8mx32 166mhz sdr sdrAM, 3.3V 下载
IS42S32800G-6BL ISSI(芯成半导体) DRAM 256M 8Mx32 166Mhz SDR SDRAM, 3.3V 下载
IS42S32800G-6BL Integrated Silicon Solution ( ISSI ) Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 下载
IS42S32800G-6BLI Integrated Silicon Solution ( ISSI ) Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 下载
IS42S32800G-6BLI All Sensors dram 256m 8mx32 166mhz sdr sdrAM, 3.3V 下载
IS42S32800G-6BLI ISSI(芯成半导体) DRAM 256M 8Mx32 166Mhz SDR SDRAM, 3.3V 下载
IS42S32800G-6BLI-TR ISSI(芯成半导体) DRAM 256M 8Mx32 166Mhz SDRAM, 3.3v 下载
IS42S32800G-6BLI-TR All Sensors dram 256m 8mx32 166mhz Sdram, 3.3v 下载
IS42S32800G-6BL-TR All Sensors dram 256m 8mx32 166mhz Sdram, 3.3v 下载
IS42S32800G-6BL-TR ISSI(芯成半导体) Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 下载
IS42S32800G-6B-TR ISSI(芯成半导体) Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 下载
IS42S32800G-75EB Integrated Silicon Solution ( ISSI ) Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 下载
IS42S32800G-75EBI Integrated Silicon Solution ( ISSI ) Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 下载
IS42S32800G-75EBL Integrated Silicon Solution ( ISSI ) Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 下载
IS42S32800G-75EBLI Integrated Silicon Solution ( ISSI ) Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 下载
IS42S32800G-75EBL-TR ISSI(芯成半导体) Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90 下载
IS42S32800G-75EB-TR ISSI(芯成半导体) Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90 下载
IS42S32800G-7B Integrated Silicon Solution ( ISSI ) Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 下载
IS42S32800G-7B ISSI(芯成半导体) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 下载
IS42S32800G-7BI ISSI(芯成半导体) DRAM 256M 8Mx32 143Mhz SDRAM, 3.3v 下载
IS42S32800G-7BI Integrated Silicon Solution ( ISSI ) Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 下载
IS42S32800G-7BI-TR ISSI(芯成半导体) DRAM 256M 8Mx32 143Mhz SDRAM, 3.3v 下载
IS42S32800G-7BL ISSI(芯成半导体) —— 下载
关于IS42S32800G相关文档资料:
对应元器件 pdf文档资料下载
IS42S32800G-6BL 、 IS42S32800G-6BL-TR 、 IS42S32800G-6BLI 、 IS42S32800G-6BLI-TR 、 IS42S32800G-7BL-TR 、 IS42S32800G-7BLI-TR 下载文档
IS42S32800G-6BI 、 IS42S32800G-6BL 、 IS42S32800G-6BLI 、 IS42S32800G-7BI 、 IS42S32800G-7BL 、 IS42S32800G-7BLI 下载文档
IS42S32800G-6BL 、 IS42S32800G-6BLI-TR 、 IS42S32800G-7BI 、 IS42S32800G-7BL 、 IS42S32800G-7BLI-TR 下载文档
IS42S32800G-6BL-TR 、 IS42S32800G-6BLI 、 IS42S32800G-7BI-TR 、 IS42S32800G-7BL-TR 、 IS42S32800G-7BLI 下载文档
IS42S32800G-75EB 、 IS42S32800G-75EBI 、 IS42S32800G-75EBL 、 IS42S32800G-75EBLI 下载文档
IS42S32800G-6B 、 IS42S32800G-6B-TR 、 IS42S32800G-7B 下载文档
IS42S32800G 、 IS42S32800G-6B 、 IS42S32800G-7B 下载文档
IS42S32800G-6BI 下载文档
IS42S32800G-6BI 下载文档
IS42S32800G-6BI-TR 下载文档
IS42S32800G资料比对:
型号 IS42S32800G-6BI IS42S32800G-6BL IS42S32800G-6BLI IS42S32800G-7BI IS42S32800G-7BL IS42S32800G-7BLI
描述 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, MO-207, TFBGA-90 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
是否Rohs认证 不符合 符合 符合 不符合 符合 符合
厂商名称 Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
零件包装代码 DSBGA DSBGA DSBGA DSBGA DSBGA DSBGA
包装说明 TFBGA, BGA90,9X15,32 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 TFBGA, BGA90,9X15,32 8 X 13 MM, MO-207, TFBGA-90 TFBGA, BGA90,9X15,32 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90
针数 90 90 90 90 90 90
Reach Compliance Code compli compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
最长访问时间 5.4 ns 5.4 ns 5.4 ns 5.4 ns 5.4 ns 5.4 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
最大时钟频率 (fCLK) 166 MHz 166 MHz 166 MHz 143 MHz 143 MHz 143 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON
交错的突发长度 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8
JESD-30 代码 R-PBGA-B90 R-PBGA-B90 R-PBGA-B90 R-PBGA-B90 R-PBGA-B90 R-PBGA-B90
长度 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm
内存密度 268435456 bi 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit
内存集成电路类型 SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
内存宽度 32 32 32 32 32 32
功能数量 1 1 1 1 1 1
端口数量 1 1 1 1 1 1
端子数量 90 90 90 90 90 90
字数 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words
字数代码 8000000 8000000 8000000 8000000 8000000 8000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 70 °C 85 °C 85 °C 70 °C 85 °C
最低工作温度 -40 °C - -40 °C -40 °C - -40 °C
组织 8MX32 8MX32 8MX32 8MX32 8MX32 8MX32
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA
封装等效代码 BGA90,9X15,32 BGA90,9X15,32 BGA90,9X15,32 BGA90,9X15,32 BGA90,9X15,32 BGA90,9X15,32
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 4096 4096 4096 4096 4096 4096
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
自我刷新 YES YES YES YES YES YES
连续突发长度 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
最大待机电流 0.003 A 0.003 A 0.003 A 0.003 A 0.003 A 0.003 A
最大压摆率 0.35 mA 0.35 mA 0.35 mA 0.27 mA 0.27 mA 0.27 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
端子形式 BALL BALL BALL BALL BALL BALL
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
宽度 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm
Factory Lead Time - 6 weeks 6 weeks 6 weeks 6 weeks 6 weeks
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