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IRHM57260

eeworld网站中关于IRHM57260有29个元器件。有IRHM57260、IRHM57260等。可以通过横向对比他们之间的异同,来寻找器件间替代的可能。
器件名 厂商 描 述 功能
IRHM57260 International Rectifier ( Infineon ) RADIATION HARDENED POWER MOSFET THRU-HOLE 下载
IRHM57260 Infineon(英飞凌) Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN 下载
IRHM57260_15 International Rectifier ( Infineon ) Simple Drive Requirements 下载
IRHM57260D International Rectifier ( Infineon ) Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 下载
IRHM57260D Infineon(英飞凌) Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 下载
IRHM57260DPBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 下载
IRHM57260PBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN 下载
IRHM57260SCS International Rectifier ( Infineon ) Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA 下载
IRHM57260SCSPBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA 下载
IRHM57260SE Infineon(英飞凌) Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 下载
IRHM57260SE International Rectifier ( Infineon ) RADIATION HARDENED POWER MOSFET THRU-HOLE 下载
IRHM57260SE_15 International Rectifier ( Infineon ) Simple Drive Requirements 下载
IRHM57260SED International Rectifier ( Infineon ) Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 下载
IRHM57260SED Infineon(英飞凌) Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 下载
IRHM57260SEDPBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 下载
IRHM57260SEDPBF Infineon(英飞凌) Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 下载
IRHM57260SEPBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 下载
IRHM57260SEPBF Infineon(英飞凌) Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 下载
IRHM57260SESCS International Rectifier ( Infineon ) Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA 下载
IRHM57260SESCS Infineon(英飞凌) Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA 下载
IRHM57260SESCSPBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA 下载
IRHM57260SEU International Rectifier ( Infineon ) Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 下载
IRHM57260SEU Infineon(英飞凌) Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 下载
IRHM57260SEUPBF Infineon(英飞凌) Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 下载
IRHM57260SEUPBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 下载
IRHM57260U International Rectifier ( Infineon ) Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 下载
IRHM57260U Infineon(英飞凌) Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 下载
IRHM57260UPBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 下载
IRHM57260UPBF Infineon(英飞凌) Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN 下载
关于IRHM57260相关文档资料:
对应元器件 pdf文档资料下载
IRHM57260SED 、 IRHM57260SEDPBF 、 IRHM57260SESCS 、 IRHM57260SEU 、 IRHM57260SEUPBF 下载文档
IRHM57260 、 IRHM57260D 、 IRHM57260U 、 IRHM57260UPBF 下载文档
IRHM57260SEPBF 下载文档
IRHM57260SE_15 下载文档
IRHM57260SE 下载文档
IRHM57260 下载文档
IRHM57260_15 下载文档
IRHM57260SE 下载文档
IRHM57260资料比对:
型号 IRHM57260SED IRHM57260SEDPBF IRHM57260SESCS IRHM57260SEU IRHM57260SEUPBF
描述 Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN
是否Rohs认证 符合 符合 不符合 符合 符合
厂商名称 Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌)
Reach Compliance Code compliant compliant compliant compliant compliant
其他特性 AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED
雪崩能效等级(Eas) 500 mJ 500 mJ 500 mJ 500 mJ 500 mJ
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 200 V 200 V 200 V 200 V 200 V
最大漏极电流 (ID) 35 A 35 A 35 A 35 A 35 A
最大漏源导通电阻 0.044 Ω 0.044 Ω 0.044 Ω 0.044 Ω 0.044 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 S-MSFM-P3 S-MSFM-P3 S-XSFM-P3 S-MSFM-P3 S-MSFM-P3
元件数量 1 1 1 1 1
端子数量 3 3 3 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 METAL METAL UNSPECIFIED METAL METAL
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) 260 NOT SPECIFIED NOT SPECIFIED 260 NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 140 A 140 A 140 A 140 A 140 A
表面贴装 NO NO NO NO NO
端子形式 PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 40 NOT SPECIFIED NOT SPECIFIED 40 NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
包装说明 HERMETIC SEALED, TO-254AA, 3 PIN FLANGE MOUNT, S-MSFM-P3 - HERMETIC SEALED, TO-254AA, 3 PIN FLANGE MOUNT, S-MSFM-P3
ECCN代码 EAR99 - EAR99 EAR99 -
认证状态 Not Qualified - Not Qualified Not Qualified -
Base Number Matches 1 1 - 1 1
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