| 器件名 |
厂商 |
描 述 |
功能 |
| IRHM57260 |
International Rectifier ( Infineon ) |
RADIATION HARDENED POWER MOSFET THRU-HOLE |
下载
|
| IRHM57260 |
Infineon(英飞凌) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN |
下载
|
| IRHM57260_15 |
International Rectifier ( Infineon ) |
Simple Drive Requirements |
下载
|
| IRHM57260D |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN |
下载
|
| IRHM57260D |
Infineon(英飞凌) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN |
下载
|
| IRHM57260DPBF |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN |
下载
|
| IRHM57260PBF |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN |
下载
|
| IRHM57260SCS |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA |
下载
|
| IRHM57260SCSPBF |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA |
下载
|
| IRHM57260SE |
Infineon(英飞凌) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 |
下载
|
| IRHM57260SE |
International Rectifier ( Infineon ) |
RADIATION HARDENED POWER MOSFET THRU-HOLE |
下载
|
| IRHM57260SE_15 |
International Rectifier ( Infineon ) |
Simple Drive Requirements |
下载
|
| IRHM57260SED |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN |
下载
|
| IRHM57260SED |
Infineon(英飞凌) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN |
下载
|
| IRHM57260SEDPBF |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN |
下载
|
| IRHM57260SEDPBF |
Infineon(英飞凌) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN |
下载
|
| IRHM57260SEPBF |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 |
下载
|
| IRHM57260SEPBF |
Infineon(英飞凌) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 |
下载
|
| IRHM57260SESCS |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA |
下载
|
| IRHM57260SESCS |
Infineon(英飞凌) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA |
下载
|
| IRHM57260SESCSPBF |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA |
下载
|
| IRHM57260SEU |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN |
下载
|
| IRHM57260SEU |
Infineon(英飞凌) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN |
下载
|
| IRHM57260SEUPBF |
Infineon(英飞凌) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN |
下载
|
| IRHM57260SEUPBF |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN |
下载
|
| IRHM57260U |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN |
下载
|
| IRHM57260U |
Infineon(英飞凌) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN |
下载
|
| IRHM57260UPBF |
International Rectifier ( Infineon ) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN |
下载
|
| IRHM57260UPBF |
Infineon(英飞凌) |
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN |
下载
|