PD-91862E
IRHM57260
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRHM57260
IRHM53260
IRHM54260
IRHM58260
Radiation Level
100 kRads(Si)
300 kRads(Si)
600 kRads(Si)
1000 kRads(Si)
RDS(on)
0.049
0.049
0.049
0.050
I
D
35A*
35A*
35A*
35A*
TO-254AA
200V, N-CHANNEL
R
5
TECHNOLOGY
Description
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for Single Event Effects (SEE) with
useful performance up to an LET of 80 (MeV/(mg/cm
2
)). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all of
the well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and temperature
stability of electrical parameters.
Features
Single Event Effect (SEE) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Light Weight
ESD Rating: Class 3B per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter
I
D
@ V
GS
= 12V, T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
*Current is limited by package
For Footnotes refer to the page 2.
1
35*
32
140
250
2.0
± 20
500
35
25
10
-55 to + 150
I
D
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
2016-06-30
IRHM57260
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
200
–––
–––
2.0
40
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.26
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
7580
920
60
–––
–––
0.049
4.0
–––
10
25
100
-100
155
45
75
35
125
80
50
–––
–––
–––
–––
V
V/°C
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 12V, I
D
= 32A
V
S
µA
nA
nC
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
= 15V, I
D
= 32A
V
DS
= 160V, V
GS
= 0V
V
DS
= 160V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 35A
V
DS
= 100V
V
GS
= 12V
V
DD
= 100V
I
D
= 35A
R
G
= 2.35
V
GS
= 12V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25 in
from package) with Source wire internally
bonded from Source pin to Drain pad
ns
nH
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
35*
140
1.2
450
6.0
A
V
ns
µ
C
Test Conditions
T
J
= 25°C,I
S
= 35A, V
GS
= 0V
T
J
= 25°C, I
F
= 35A, V
DD
≤
25V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
* Current is limited by package
Thermal Resistance
Parameter
R
JC
R
CS
R
JA
Junction-to-Case
Case -to-Sink
Junction-to-Ambient (Typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.21
–––
Max.
0.50
–––
48
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= 25V, starting T
J
= 25°C, L =0.82mH, Peak I
L
= 35A, V
GS
= 12V
V
I
SD
35A, di/dt
410A/µs, V
DD
200V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias.
12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias.
160 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
2016-06-30
IRHM57260
Radiation Characteristics
Pre-Irradiation
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254AA)
Diode Forward Voltage
Up to 600 kRads (Si)
1
1000 kRads (Si)
2
Min.
200
2.0
–––
–––
–––
–––
–––
–––
Max.
–––
4.0
100
-100
10
0.044
0.049
1.2
Min.
200
1.25
–––
–––
–––
–––
–––
–––
Max.
–––
4.0
100
-100
25
0.045
0.050
1.2
V
V
nA
nA
µA
V
V
GS
= 0V, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 160V, V
GS
= 0V
V
GS
= 12V, I
D
= 32A
V
GS
= 12V, I
D
= 32A
V
GS
= 0V, I
D
= 35A
Units
Test Conditions
1. Part numbers IRHM57260, IRHM53260 and IRHM54260
2. Part number IRHM58260
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm
2
))
36.7
59.8
82.3
Energy
(MeV)
309
341
350
250
200
150
100
50
0
0
-5
-10
VGS
-15
-20
Br
I
Au
Range
(µm)
39.5
32.5
28.4
V
DS
(V)
@VGS=0V
200
200
50
@VGS=-5V
200
100
35
@VGS=-10V @VGS=-15V @VGS=-20V
150
40
25
100
35
–––
50
30
–––
VDS
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
2016-06-30
IRHM57260
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
5.0V
5.0V
10
10
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 35A
I
D
, Drain-to-Source Current (A)
2.5
2.0
T
J
= 25
°
C
100
1.5
T
J
= 150
°
C
1.0
0.5
10
5.0
V DS = 50V
20µs PULSE WIDTH
5.5
6.0
6.5
7.0
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
12000
Fig 4.
Normalized On-Resistance Vs. Temperature
20
10000
V
GS
, Gate-to-Source Voltage (V)
V
GS
C
iss
C
rss
C
oss
=
=
=
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
I
D
= 35A
16
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
C, Capacitance (pF)
8000
Ciss
12
6000
8
4000
Coss
2000
4
Crss
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
200
240
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
4
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
2016-06-30
IRHM57260
Pre
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(ON)
100
100
T
J
= 150
°
C
ID, Drain Current (A)
10
10
10us
100us
T
J
= 25
°
C
1
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1ms
10ms
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
2.2
0.1
V
SD
,Source-to-Drain Voltage (V)
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
E
AS
, Single Pulse Avalanche Energy (mJ)
50
Fig 8.
Maximum Safe Operating Area
1200
LIMITED BY PACKAGE
40
TOP
BOTTOM
1000
ID
16A
22A
35A
I
D
, Drain Current (A)
800
30
600
20
400
10
200
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Starting T
J
, Junction Temperature (
°
C)
Fig 9.
Maximum Drain Current Vs. Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2016-06-30
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