| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| FDC655BN | Fairchild | 6300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 下载 |
| FDC655BN | ON Semiconductor(安森美) | 漏源电压(Vdss):30V 连续漏极电流(Id)(25°C 时):6.3A 栅源极阈值电压:3V @ 250uA 漏源导通电阻:25mΩ @ 6.3A,10V 最大功率耗散(Ta=25°C):1.6W 类型:N沟道 N沟道,30V,6.3A,21mΩ@10V | 下载 |
| FDC655BN_F073 | Fairchild | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 下载 |
| FDC655BN_F123 | Fairchild | MOSFET 30V N-CHAN 0.025Ohms | 下载 |
| FDC655BN-F40 | ON Semiconductor(安森美) | N-Channel PowerTrench® MOSFET, Logic Level, 30 V, 6.3 A, 25 mΩ, SSOT 6L, 3000-REEL | 下载 |
| FDC655BN-NBNN007 | Fairchild | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 下载 |
| FDC655BN_NL | Fairchild | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| FDC655BN-NBNN007 、 FDC655BN_F073 、 FDC655BN_F073 | 下载文档 |
| FDC655BN 、 FDC655BN-F40 | 下载文档 |
| FDC655BN_NL | 下载文档 |
| FDC655BN_F123 | 下载文档 |
| FDC655BN | 下载文档 |
| 型号 | FDC655BN-NBNN007 | FDC655BN_F073 | 1720101020 |
|---|---|---|---|
| 描述 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Board Connector, 100 Contact(s), 10 Row(s), Female, Right Angle, Press Fit Terminal, Receptacle, LOW HALOGEN, ROHS AND REACH COMPLIANT |
| 包装说明 | , | , | LOW HALOGEN, ROHS AND REACH COMPLIANT |
| Reach Compliance Code | compliant | unknown | compliant |
| 是否Rohs认证 | 符合 | - | 符合 |
| 厂商名称 | Fairchild | Fairchild | - |
| 配置 | Single | Single | - |
| 最大漏极电流 (Abs) (ID) | 6.3 A | 6.3 A | - |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
| 最高工作温度 | 150 °C | 150 °C | - |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | - |
| 最大功率耗散 (Abs) | 1.6 W | 1.6 W | - |
| 表面贴装 | YES | YES | - |
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