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JANS2N2369A: 产品描述Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, HERMETIC SEALED, METAL CAN-3; 产品类别分立半导体晶体管; 文件大小45KB，共2页; 制造商Microsemi; 官网地址https://www.microsemi.com

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JANS2N2369A概述

Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, HERMETIC SEALED, METAL CAN-3

JANS2N2369A规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
Objectid	1813438894
零件包装代码	BCY
包装说明	CYLINDRICAL, O-MBCY-W3
针数	3
Reach Compliance Code	not_compliant
ECCN代码	EAR99
Samacsys Manufacturer	Microsemi Corporation
Samacsys Modified On	2019-11-08 17:42:43
外壳连接	COLLECTOR
最大集电极电流 (IC)	0.2 A
集电极-发射极最大电压	15 V
配置	SINGLE
最小直流电流增益 (hFE)	20
JEDEC-95代码	TO-18
JESD-30 代码	O-MBCY-W3
JESD-609代码	e0
元件数量	1
端子数量	3
最高工作温度	200 °C
封装主体材料	METAL
封装形状	ROUND
封装形式	CYLINDRICAL
极性/信道类型	NPN
最大功率耗散 (Abs)	0.36 W
认证状态	Qualified
参考标准	MIL-19500/317
表面贴装	NO
端子面层	TIN LEAD
端子形式	WIRE
端子位置	BOTTOM
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	500 MHz
最大关闭时间（toff）	18 ns
最大开启时间（吨）	12 ns

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN SILICON TRANSISTOR

Qualified per MIL-PRF-19500/317

DEVICES

LEVELS

2N2369A

2N2369AU

2N2369AUA

2N2369AUB

2N2369AUBC *

2N4449

JAN

JANTX

JANTXV

JANS

Available to JANS quality level only.

ABSOLUTE MAXIMUM RATINGS

= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Emitter Voltage

Emitter-Base Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Total Power Dissipation @

= +25°C

2N2369A; 2N4449

UA, UB, UBC

2N2369A / U / UA

2N4449 / UB / UBC

2N2369A / U / UA

2N4449 / UB / UBC

Symbol

CEO

EBO

CBO

CES

, T

stg

Value

4.5

6.0

0.36

(1)

0.36

(1, 5)

0.50

(4)

-65 to +200

Unit

Vdc

TO-18 (TO-206AA)

2N2369A

TO-46 (TO-206AB)

Operating & Storage Junction Temperature Range

°C

2N4449

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Thermal Resistance, Ambient-to-Case

2N2369A; 2N4449

UA, UB, UBC

Note:

Symbol

θJA

Value

400

(5)

350

Unit

°C/W

SURFACE MOUNT

Derate linearly 2.06 mW°/C above T

= +25°C.

Derate linearly 4.76 mW°/C above T

= +95°C.

Derate linearly 3.08 mW°/C above T

= +70°C.

Derate linearly 3.44 mW°/C above T

= +54.5°C.

Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads.

SURFACE MOUNT

UB & UBC

(UBC = Ceramic Lid Version)

ELECTRICAL CHARACTERISTICS

= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

= 10mAdc

Collector-Base Cutoff Current

= 20Vdc

T4-LDS-0057 Rev. 2 (081394)

Symbol

Min.

Max.

Unit

(BR)CEO

CES

0.4

Vdc

μAdc

SURFACE MOUNT

U (Dual Transistor)

Page 1 of 2

JANS2N2369A相似产品对比

	JANS2N2369A	Jantxv2N2369AUB	JANS2N2369AUBC	Jan2N4449	JANS2N2369AUB	JANS2N2369AUA	Jantx2N4449	2N2369AUA	Jan2N2369AUB
描述	Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, HERMETIC SEALED, METAL CAN-3	Small Signal Bipolar Transistor, 20V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-3	Bipolar Transistors - BJT Small-Signal BJT	Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AB, TO-46, 3 PIN	Bipolar Transistors - BJT Small-Signal BJT	Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-4	Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-46, TO-46, 3 PIN	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT Small-Signal BJT
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
包装说明	CYLINDRICAL, O-MBCY-W3	SURFACE MOUNT PACKAGE-3	SMALL OUTLINE, R-CDSO-N3	TO-46, 3 PIN	SMALL OUTLINE, R-CDSO-N3	SURFACE MOUNT PACKAGE-4	TO-46, 3 PIN	SMALL OUTLINE, R-CDSO-N4	SMALL OUTLINE, R-CDSO-N3
针数	3	3	3	3	3	4	3	4	3
Reach Compliance Code	not_compliant	not_compliant	compliant	unknown	not_compliant	unknown	unknown	compliant	compliant
集电极-发射极最大电压	15 V	20 V	15 V	15 V	15 V	15 V	15 V	15 V	20 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	20	20	20	20	20	20	20	40	20
JESD-30 代码	O-MBCY-W3	R-CDSO-N3	R-CDSO-N3	O-MBCY-W3	R-CDSO-N3	R-XDSO-N4	O-MBCY-W3	R-CDSO-N4	R-CDSO-N3
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0
元件数量	1	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	4	3	4	3
最高工作温度	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C	175 °C	200 °C	200 °C
封装主体材料	METAL	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	METAL	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	METAL	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND	RECTANGULAR	RECTANGULAR	ROUND	RECTANGULAR	RECTANGULAR	ROUND	RECTANGULAR	RECTANGULAR
封装形式	CYLINDRICAL	SMALL OUTLINE	SMALL OUTLINE	CYLINDRICAL	SMALL OUTLINE	SMALL OUTLINE	CYLINDRICAL	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
认证状态	Qualified	Not Qualified	Qualified	Qualified	Qualified	Not Qualified	Qualified	Not Qualified	Qualified
表面贴装	NO	YES	YES	NO	YES	YES	NO	YES	YES
端子面层	TIN LEAD	TIN LEAD	Tin/Lead (Sn/Pb)	TIN LEAD	Tin/Lead (Sn/Pb)	TIN LEAD	TIN LEAD	TIN LEAD	Tin/Lead (Sn/Pb)
端子形式	WIRE	NO LEAD	NO LEAD	WIRE	NO LEAD	NO LEAD	WIRE	NO LEAD	NO LEAD
端子位置	BOTTOM	DUAL	DUAL	BOTTOM	DUAL	DUAL	BOTTOM	DUAL	DUAL
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
最大关闭时间（toff）	18 ns	18 ns	18 ns	18 ns	18 ns	18 ns	18 ns	18 ns	18 ns
最大开启时间（吨）	12 ns	12 ns	12 ns	12 ns	12 ns	12 ns	12 ns	12 ns	12 ns
Objectid	1813438894	1689295890	-	1439171604	-	2078551627	2078571716	-	-
ECCN代码	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99	-
最大功率耗散 (Abs)	0.36 W	1.4 W	0.36 W	-	1.4 W	1.2 W	0.3 W	1.2 W	1.4 W
参考标准	MIL-19500/317	MIL-19500/317	MIL-19500	MIL-19500	MIL-19500/317	MIL-19500	MIL-19500/317K	-	MIL-19500/317
晶体管应用	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING

JANS2N2369A

JANS2N2369A在线购买

JANS2N2369A概述

JANS2N2369A规格参数

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