NTD20P06L, NTDV20P06L
Power MOSFET
−60
V,
−15.5
A, Single P−Channel, DPAK
Features
•
•
•
•
Withstands High Energy in Avalanche and Commutation Modes
Low Gate Charge for Fast Switching
AEC Q101 Qualified
−
NTDV20P06L
These Devices are Pb−Free and are RoHS Compliant
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I
D
MAX
(Note 1)
−15.5
A
V
(BR)DSS
−60
V
R
DS(on)
TYP
130 mW @
−5.0
V
P−Channel
D
Applications
•
Bridge Circuits
•
Power Supplies, Power Motor Controls
•
DC−DC Conversion
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source
Voltage
Continuous
Drain Current
(Note 1)
Power Dissipa-
tion (Note 1)
Pulsed Drain
Current
Continuous
Non−Repetitive
Steady State
t
p
v10
ms
T
A
= 25°C
Symbol
V
DSS
V
GS
V
GSM
I
D
Value
−60
$20
$30
−15.5
A
4
65
$50
−55
to
175
304
W
A
°C
mJ
1 2
Unit
V
V
G
S
MARKING DIAGRAMS
4
Drain
AYWW
T20
P06LG
2
1
3
Drain
Gate
Source
4
Drain
AYWW
T20
P06LG
2
1 2 3
Gate Drain Source
Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
20P06L
A
Y
WW
G
Publication Order Number:
NTD20P06L/D
Steady State
T
A
= 25°C
P
D
I
DM
T
J
,
T
STG
E
AS
3
t
p
= 10
ms
Operating Junction and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 25 V, V
GS
= 5 V, I
PK
= 15 A,
L = 2.7 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
DPAK
CASE 369C
STYLE 2
4
T
L
260
°C
1
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Symbol
R
qJC
R
qJA
R
qJA
Max
2.3
80
110
Unit
°C/W
3
IPAK/DPAK
CASE 369D
STYLE 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq.)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
August, 2011
−
Rev. 6
1
NTD20P06L, NTDV20P06L
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
V
DS(on)
V
GS
=
−5.0
V, I
D
=
−7.5
A
V
GS
=
−5.0
V, I
D
=
−15
A
Forward Transconductance
Drain−to−Source On−Voltage
V
DS
=
−10
V, I
D
=
−7.5
A
V
GS
=
−5.0
V,
I
D
=
−7.5
A
T
J
= 25°C
T
J
= 150°C
740
V
GS
= 0 V, f = 1 MHz, V
DS
=
−25
V
207
66
15
V
GS
=
−5.0
V, V
DS
=
−48
V,
I
D
=
−18
A
4.0
7.0
V
GS
= 0 V,
V
DS
=
−60
V
T
J
= 25°C
T
J
= 150°C
V
GS
= 0 V, I
D
=
−250
mA
−60
−74
−64
−1.0
−10
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Units
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
=
−250
mA
−1.0
−1.5
3.1
0.130
0.143
11
−2.0
V
mV/°C
0.150
W
S
−1.2
−1.9
V
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
=
−12
A
V
GS
= 0 V, I
S
=
−15
A
T
J
= 25°C
T
J
= 150°C
1.5
1.3
60
39
21
0.13
nC
ns
2.5
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
=
−5.0
V, V
DD
=
−30
V,
I
D
=
−15
A, R
G
= 9.1
W
11
90
28
70
20
180
50
135
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
GS
Q
GD
1190
300
120
26
nC
pF
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%
4. Switching characteristics are independent of operating junction temperatures
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2
NTD20P06L, NTDV20P06L
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
40
35
−I
D
, DRAIN CURRENT (A)
30
25
20
15
10
5
0
0
1
2
3
4
5
6
7
V
GS
=
−4
V
V
GS
=
−3.5
V
V
GS
=
−3
V
T
J
= 25°C
8
9
10
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
=
−10
V
V
GS
=
−9
V
V
GS
=
−8
V
V
GS
=
−7
V
V
GS
=
−6
V
−I
D
, DRAIN CURRENT (A)
V
GS
=
−5.5
V
V
GS
=
−5
V
V
GS
=
−4.5
V
40
T
J
=
−55°C
30
T
J
= 25°C
20
T
J
= 125°C
10
VDS
w
10 V
0
1
2
3
4
5
6
7
8
9
0
−V
DS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(W)
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
5
10
15
20
25
T
J
= 25°C
T
J
=
−55°C
T
J
= 125°C
V
GS
=
−5
V
0.25
0.225
0.2
0.175
0.15
0.125
0.1
0.075
0.05
0.025
0
0
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
=
−5
V
V
GS
=
−10
V
30
3
6
9
12
15
18
21
24
−I
D
, DRAIN CURRENT (A)
−I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−50
I
D
=
−7.5
A
V
GS
=
−5
V
10000
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
−I
D
, LEAKAGE (nA)
1000
100
10
1
−25
0
25
50
75
100
125
150
5
10
15
20
25
30
35
40
45
50
55
60
T
J
, JUNCTION TEMPERATURE (°C)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
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3
Figure 6. Drain−to−Source Leakage Current
versus Voltage
NTD20P06L, NTDV20P06L
2400
2200
2000
C, CAPACITANCE (pF)
1800
1600
1400
1200
1000
800
600
400
200
0
−10
−5
−V
GS
0
−V
DS
V
DS
= 0 V
C
iss
V
GS
= 0 V
T
J
= 25°C
C
rss
C
iss
C
oss
C
rss
5
10
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (V)
Figure 7. Capacitance Variation
7.5
−V
GS
, GATE−TO−SOURCE VOLTAGE
(V)
I
D
=
−15
A
6.25
5.0
3.75
2.5
1.25
0
0
4
8
12
Q
g
, TOTAL GATE CHARGE (nC)
V
DS
Q
gs
Q
GD
Q
G
V
GS
T
J
= 25°C
50
40
30
20
10
0
16
60
V
DS
,
DRAIN−TO−SOURCE VOLTAGE
(V)
Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge
1000
−I
S
, SOURCE CURRENT (A)
V
DD
=
−30
V
I
D
=
−15
A
V
GS
=
−5
V
t, TIME (nS)
100
t
F
t
d(off)
t
d(on)
t
R
20
V
GS
= 0 V
T
J
= 25°C
15
10
10
5
1
1
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
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4
10
R
g
, GATE RESISTANCE (W)
100
0
0
0.25
0.5
0.75
1
1.25
1.5
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1.75
Figure 10. Diode Forward Voltage versus
Current
NTD20P06L, NTDV20P06L
1000
−I
D
, DRAIN CURRENT (A)
V
GS
=
−15
V
Single Pulse
T
C
= 25°C
100
10
10 ms
1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
dc
1
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
350
300
250
200
150
100
50
0
25
50
75
100
125
T
J
, STARTING JUNCTION TEMPERATURE (°C)
150
I
D
=
−15
A
100
0.1
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
R
qjc(°C/W)
, EFFECTIVE TRANSIENT THERMAL RESPONSE
10
D = 0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0.01
0.000001
Single Pulse
0.00001
0.0001
0.001
t, TIME (s)
0.01
0.1
1
Figure 13. Thermal Response
ORDERING INFORMATION
Device
NTD20P06LG
NTD20P06LT4G
NTDV20P06LT4G
DPAK
(Pb−Free)
Package
Shipping
†
75 Units / Rail
2500 / Tape & Reel
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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