TENTATIVE
This is not a final specification.
Some parameters are subject to change.
〈SMALL-SIGNAL TRANSISTOR〉
INC6001AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE (mini type)
OUTLINE DRAWING
2.5
0.5
1.5
0.5
DESCRIPTION
INC6001AC1 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
.
Unit:½½
0.95
2.9
1.90
FEATURE
●Super mini package for easy mounting
● Small collector to emitter saturation voltage
● High collector current
● High voltage
I
C
=1A
V
CE(sat)
=0.5V
①
②
③
V
CEO
=100V
1.1
0.16
0.8
0.95
APPLICATION
For DC/DC converter , power supply etc.
JEITA:SC-59
TERMINAL CONNECTER
①:BASE
Ratings
120
6
100
1
200
+150
-55½+150
Unit
V
V
V
A
mW
℃
℃
MAXIMUM RATINGS
(Ta=25℃)
Symbol
V
CBO
V
EBO
V
CEO
I
C
P
C
T
j
T
stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
②:EMITTER
③:COLLECTOR
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain bandwidth product
Collector output capacitance
Symbol
V(BR)
CBO
V(BR)
EBO
V(BR)
CEO
I
CBO
I
EBO
hFE
V
CE(sat)
fT
Cob
I
C
=10μA , I
E
=0
I
E
=10μA , I
C
=0
I
C
=1mA ,R
V
V
V
CB
EB
BE
0½0.1
Test conditions
0.4
Limits
Min
120
6
100
-
-
100
-
-
-
Typ
-
-
-
-
-
-
-
270
5
Max
-
-
-
500
500
300
0.5
-
-
V
MHz
pF
Unit
V
V
V
nA
nA
=∞
=120V, I
E
=0mA
=6V, I
C
=0mA
=2V, I
C
=150mA
=10V, I
E
=-50mA
=10V, I
E
=0mA,f=1MHz
CE
I
C
=500mA ,I
B
=50mA
V
V
CE
CB
ISAHAYA ELECTRONICS CORPORATION
TENTATIVE
This is not a final specification.
Some parameters are subject to change.
〈SMALL-SIGNAL TRANSISTOR〉
INC6001AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE (mini type)
Collector dissipation-AMBIENT TEMPERATURE
500
Collector dissipation Pc (mW)
0.6
Pcmax=0.2W
COMMON EMITTER OUTPUT
Ta=25℃
3.5mA
3.0mA
2.5mA
Collector current IC (A)
400
0.4
2.0mA
1.5mA
1.0mA
300
200
0.2
100
IB=0.5mA
0
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta (℃)
0
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE VCE (V)
COMMON EMITTER TRANSFER
10
VCE=2V
DC forward current gain VS. Collector current
1000
75℃
VCE=2V
Collector current IC (A)
1
0.1
Ta=-40℃
DC forward current gain hFE
100
Ta=-40℃
25℃
0.01
25℃
0.001
75℃
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
BASE TO EMITTER VOLTAGE VBE (V)
10
0.0001
0.001
0.01
0.1
1
10
Collector current IC (A)
1000
COLLECTOR TO EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS.COLLECTOR CURRENT
IC/IB=10
10
BASE TO EMITTER SATURATION
VOLTAGE VBE(sat) (V)
BASE TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
IC/IB=10
100
75℃
25℃
1
Ta=-40℃
25℃
75℃
Ta=-40℃
10
0.0001
0.001
0.01
0.1
1
10
0.1
0.0001
0.001
0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
ISAHAYA ELECTRONICS CORPORATION
TENTATIVE
This is not a final specification.
Some parameters are subject to change.
〈SMALL-SIGNAL TRANSISTOR〉
INC6001AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE (mini type)
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
1000
COLLECTOR OUTPUT CAPACITANCE
Cob (pF)
Ta=25℃
VCE=10V
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
Ta=25℃
IE=0mA
f=1MHz
GAIN BAND WIDTH PRODUCT
½T (MH½)
100
10
10
1
1
-1
-10
-100
-1000
EMITTER CURRENT IE (½A)
Ta=25℃
single pulse
0.1
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE VCB (V)
ASO
10
ICMmax=2A((less than 100msec)
Collector current IC (A)
1
ICmax=1A
PW=1msec
10msec
DC operation
(200mW)
100msec
1sec
0.1
0.01
VCEmax=100V
0.001
0.01
0.1
1
10
100
1000
COLLECTOR TO EMITTER VOLTAGE VCE (V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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·
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Feb.2009