VS-401CNQ...PbF Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 400 A
FEATURES
Lug
terminal
anode 1
Lug
terminal
anode 2
• 175 °C T
J
operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
TO-244
Base common
cathode
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
Package
Circuit configuration
400 A
40 V, 45 V
TO-244
Two diodes common cathode
DESCRIPTION / APPLICATIONS
The VS-401CNQ... center tap Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in high current switching power supplies,
converters, freewheeling diodes, welding and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 μs sine
200 A
pk
, T
J
= 125 °C (per leg)
Range
VALUES
400
40/45
25 000
0.56
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-401CNQ040PbF
40
VS-401CNQ045PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward
current (fig. 5)
per leg
I
F(AV)
per device
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 24 A, L = 1 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
50 % duty cycle at T
C
= 147 °C, rectangular waveform
400
A
Maximum peak one cycle non-repetitive
surge current per leg (fig. 7)
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
25 000
3450
270
40
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
200
UNITS
Revision: 11-May-17
Document Number: 94205
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-401CNQ...PbF Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
200 A
Maximum forward voltage drop per leg
See fig. 1
V
FM (1)
400 A
200 A
400 A
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= T
J
maximum
V
R
= Rated V
R
VALUES
0.67
0.78
0.56
0.69
20
180
10 300
5.0
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
From top of terminal hole to mounting plane
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Thermal resistance, junction to case per leg
Thermal resistance, junction to case per module
Thermal resistance, case to heatsink
Weight
Mounting torque
Mounting torque center hole
Terminal torque
Vertical pull
2" lever pull
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
MIN.
-55
-
-
-
-
-
35.4 (4)
30 (3.4)
30 (3.4)
-
-
-
-
-
TYP.
-
-
-
0.10
68
2.4
MAX.
175
0.19
0.095
-
-
-
53.1 (6)
40 (4.6)
44.2 (5)
80
35
lbf
⋅
in
lbf
⋅
in
(N
⋅
m)
g
oz.
°C/W
UNITS
°C
I
F
- Instantaneous Forward Current (A)
1000
10 000
T
J
= 175 °C
I
R
- Reverse Current (mA)
1000
100
10
1
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
100
T
J
= 125 °C
10
0.1
0.01
0.001
T
J
= 25 °C
T
J
= 50 °C
T
J
= 25 °C
0
10
20
30
40
50
1
0
0.2
0.4
0.6
0.8
1.0
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 11-May-17
Document Number: 94205
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-401CNQ...PbF Series
www.vishay.com
Vishay Semiconductors
10 000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
0
10
20
30
40
50
60
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
P
DM
t
1
t
2
0.01
Single pulse
(thermal resistance)
0.001
0.00001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Allowable Case Temperature (°C)
180
175
160
DC
Average Power Loss (W)
150
125
100
75
50
25
0
140
120
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
100
Square
wave
(D = 0.50)
80 % rated
V
r
applied
See note (1)
80
0
50
100
150
200
250
300
0
50
100
150
200
250
300
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 11-May-17
Document Number: 94205
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-401CNQ...PbF Series
www.vishay.com
I
FSM
- Non-Repetitive Surge Current (A)
Vishay Semiconductors
100 000
At any rated load condition
and
with
rated
V
RRM
applied
following surge
10 000
1000
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+
V
d
= 25
V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
ORDERING INFORMATION TABLE
Device code
VS-
1
40
2
-
-
-
-
-
-
-
-
1
3
C
4
N
5
Q
6
045 PbF
7
8
1
2
3
4
5
6
7
8
Vishay Semiconductors product
Average current rating (x 10)
Product silicon identification
C = circuit configuration
N = not isolated
Q = Schottky rectifier diode
Voltage ratings
Lead (Pb)-free
040 = 40 V
045 = 45 V
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95021
Revision: 11-May-17
Document Number: 94205
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-244
DIMENSIONS
in millimeters (inches)
35 (1.37) REF.
13 (0.51)
7 (0.27)
6 (0.23)
40 (1.57)
80 (3.15)
17.5 (0.69)
16.5 (0.65)
Ø 5.2 (Ø 0.20)
3
12.6 (0.5)
1
2
3
21 (0.82)
20 (0.78)
Ø 7.2 (Ø 0.28)
(2 places)
¼" - 20 UNC
9.6 (0.37) MIN.
93 (3.66) MAX.
Revision: 24-Apr-15
Document Number: 95021
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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