VS-113CNQ100APbF Series
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Vishay Semiconductors
High Performance Schottky Rectifier New Generation 3
D-61 Package, 2 x 55 A
VS-113CNQ100APbF
FEATURES
Base
common
cathode
• 175 °C T
J
operation
• Center tap module
• Low forward voltage drop
3
Anode
2
Available
Available
1
Anode
1
2
Common
cathode
• High frequency operation
• High power discrete
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
D-61-8
VS-113CNQ100ASMPbF
1
Anode
1
2
Common
cathode
3
Anode
2
• New fully transfer-mold low profile, small footprint, high
current package
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D-61-8-SM
VS-113CNQ100ASLPbF
Base
common
cathode
Note
*
This datasheet provides information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details.
3
Anode
2
1
D-61-8-SL
Anode
1
DESCRIPTION
The center tap Schottky rectifier module series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
D-61-8, D-61-8-SM, D-61-8-SL
2 x 55 A
100 V
0.81 V
32 mA at 125 °C
175 °C
Common cathode
15 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
55 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
110
100
7000
0.66
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-113CNQ100APbF
100
UNITS
V
Revision: 23-May-14
Document Number: 94125
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-113CNQ100APbF Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
per device
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 30 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
50 % duty cycle at T
C
= 150 °C, rectangular waveform
110
7000
A
720
15
1
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
55
A
UNITS
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
55 A
Maximum forward voltage drop per leg
See fig. 1
V
FM (1)
110 A
55 A
110 A
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
V
R
= Rated V
R
T
J
= 125 °C
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
32
1960
5.5
10 000
pF
nH
V/μs
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
VALUES
0.81
1.00
0.66
0.79
1.0
mA
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink (D-61-8 only)
Approximate weight
Mounting torque
(D-61-8 only)
minimum
maximum
SYMBOL
T
J
, T
Stg
DC operation
See fig. 4
DC operation
R
thCS
Mounting surface, smooth and greased
Device flatness < 5 mils
TEST CONDITIONS
VALUES
-55 to +175
0.5
0.25
0.30
7.8
0.28
Recommended hardware 3M stainless screw
Case style D-61-8
Marking device
Case style D-61-8-SM
Case style D-61-8-SL
12 (10)
24 (20)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
R
thJC
113CNQ100A
113CNQ100ASM
113CNQ100ASL
Revision: 23-May-14
Document Number: 94125
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-113CNQ100APbF Series
www.vishay.com
Vishay Semiconductors
1000
I
F
- Instantaneous Forward Current (A)
1000
I
R
- Reverse Current (mA)
100
10
1
0.1
0.01
T
J
= 25 °C
0.001
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 175 °C
T
J
= 150 °C
100
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
0
20
40
60
80
100
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
10 000
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
100
0
20
40
60
80
100
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
0.01
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
.
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 23-May-14
Document Number: 94125
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-113CNQ100APbF Series
www.vishay.com
Vishay Semiconductors
60
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
180
Allowable Case Temperature (°C)
Average Power Loss (W)
170
160
150
140
130
120
See note (1)
110
0
10
20
30
40
50
60
70
80
90
Square wave (D = 0.50)
80 % rated V
R
applied
DC
50
40
30
20
10
0
0
RMS limit
DC
10
20
30
40
50
60
70
80
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
10 000
1000
At any rated load condition and
with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 23-May-14
Document Number: 94125
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-113CNQ100APbF Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
113
2
C
3
N
4
Q
5
100
6
A
7
PbF
8
1
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating (110 A)
Circuit configuration:
C = common cathode
Package:
N = D-61
Schottky “Q” series
Voltage rating (100 = 100 V)
Package style:
A = D-61-8
ASM = D-61-8-SM
ASL = D-61-8-SL
2
3
4
5
6
7
8
-
None = standard production
PbF = lead (Pb)-free
Standard pack quantity: A = 10 pieces; ASM/ASL = 20 pieces
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95354
www.vishay.com/doc?95356
Revision: 23-May-14
Document Number: 94125
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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