CS45-16io1R
Thyristor
V
RRM
I
TAV
V
T
=
=
=
1600 V
45 A
1,37 V
Single Thyristor
Part number
CS45-16io1R
Backside: isolated
2
3
1
Features / Advantages:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
Applications:
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Power converter
●
AC power control
●
Lighting and temperature control
Package:
ISOPLUS247
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
●
Soldering pins for PCB mounting
●
Backside: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827d
© 2015 IXYS all rights reserved
CS45-16io1R
Thyristor
Symbol
V
RSM/DSM
V
RRM/DRM
I
R/D
V
T
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
T
VJ
= 150 °C
min.
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
Ratings
typ.
max. Unit
1700
V
1600
50
3
1,36
1,73
1,37
1,85
45
71
0,88
11
0,25
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
T
C
= 150 °C
22
10
5
0,5
T
VJ
= 125 °C; f = 50 Hz
repetitive, I
T
= 135 A
t
P
= 200 µs; di
G
/dt = 0,3 A/µs;
I
G
=
0,3 A; V =
⅔
V
DRM
non-repet., I
T
=
45 A
V =
⅔
V
DRM
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
V
D
= 6 V
V
D
=
⅔
V
DRM
t
p
=
I
G
=
10 µs
0,3 A; di
G
/dt =
0,3 A/µs
T
VJ
= 25 °C
T
VJ
= 25 °C
0,3 A/µs
150
µs
20 V/µs t
p
= 200 µs
100
2
mA
µs
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 125°C
T
VJ
= 25 °C
208
520
560
440
475
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
W
A
A
A
A
V
R/D
= 1600 V
V
R/D
= 1600 V
I
T
=
I
T
=
I
T
=
I
T
=
45 A
90 A
45 A
90 A
I
TAV
I
T(RMS)
V
T0
r
T
R
thJC
R
thCH
P
tot
I
TSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 90 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0,6 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
1,35 kA²s
1,31 kA²s
970
940
A²s
A²s
pF
W
W
W
C
J
P
GM
P
GAV
(di/dt)
cr
junction capacitance
max. gate power dissipation
V
R
= 400 V f = 1 MHz
t
P
= 30 µs
t
P
= 300 µs
average gate power dissipation
critical rate of rise of current
150 A/µs
500 A/µs
1000 V/µs
1,5
1,6
80
200
0,2
10
150
V
V
mA
mA
V
mA
mA
(dv/dt)
cr
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
V
D
= 6 V R
GK
=
∞
V
D
= ½ V
DRM
I
G
=
0,3 A; di
G
/dt =
turn-off time
V
R
= 100 V; I
T
= 45 A; V =
⅔
V
DRM
T
VJ
=125 °C
di/dt = 15 A/µs dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827d
© 2015 IXYS all rights reserved
CS45-16io1R
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting force with clip
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
ISOPLUS247
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
70
150
125
150
Unit
A
°C
°C
°C
g
N
mm
mm
V
V
6
20
2,7
4,1
3600
3000
120
Product Marking
Logo
Part No.
Assembly Line
Assembly Code
Date Code
IXYS
ISOPLUS®
XXXXXXXXX
Zyyww
abcd
Ordering
Standard
Ordering Number
CS45-16io1R
Marking on Product
CS45-16io1R
Delivery Mode
Tube
Quantity
30
Code No.
480312
Similar Part
CS45-08io1
CS45-12io1
CS45-16io1
Package
TO-247AD (3)
TO-247AD (3)
TO-247AD (3)
Voltage class
800
1200
1600
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Thyristor
* on die level
T
VJ
= 150 °C
V
0 max
R
0 max
0,88
8,5
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827d
© 2015 IXYS all rights reserved
CS45-16io1R
Outlines ISOPLUS247
A
E
Q
E1
D2
A2
Dim.
1
L1
2
3
A
A1
A2
b
b2
b4
c
D
D1
D2
D3
E
E1
e
L
L1
Q
R
W
Millimeter
min
max
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.20
2.92
3.24
0.61
0.83
20.80
21.34
15.75
16.26
1.65
2.15
20.30
20.70
15.75
16.13
13.21
13.72
5.45 BSC
19.81
20.60
3.81
4.38
5.59
6.20
4.25
5.50
-
0.10
Inches
min
max
0.190
0.205
0.090
0.100
0.075
0.085
0.045
0.055
0.075
0.087
0.115
0.128
0.024
0.033
0.819
0.840
0.620
0.640
0.065
0.085
0.799
0.815
0.620
0.635
0.520
0.540
0.215 BSC
0.780
0.811
0.150
0.172
0.220
0.244
0.167
0.217
-
0.004
R
L
2x b2
3x b
b4
c
A1
D3
D
D1
2x e
Die konvexe Form des Substrates ist typ. < 0.04 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.04 mm over plastic
surface level of device bottom side
Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD
gemäß JEDEC außer Schraubloch und L
max.
This drawing will meet all dimensions requiarement of JEDEC
outline TO-247 AD except screw hole and except L
max.
W
2
3
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827d
© 2015 IXYS all rights reserved
CS45-16io1R
Thyristor
100
450
50 Hz, 80% V
RRM
10000
V
R
= 0 V
80
400
T
VJ
= 45°C
I
T
60
350
It
1000
2
I
TSM
[A]
40
[A]
20
125°C
150°C
T
VJ
= 25°C
1,0
1,5
2,0
250
T
VJ
= 125°C
300
T
VJ
= 45°C
[A
2
s]
T
VJ
= 125°C
0
0,5
200
0,01
0,1
1
100
1
2
2
3
4 5 6 7 8 910
V
T
[V]
Fig. 1 Forward characteristics
t [s]
Fig. 2 Surge overload current
t [ms]
Fig. 3 I t versus time (1-10 ms)
10
1: I
GD
, T
VJ
= 150°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
1000
80
dc =
1
0.5
0.4
0.33
0.17
0.08
5
2
3
4
6
60
100
V
G
1
1
t
gd
[µs]
10
typ.
Limit
I
T(AV)M
40
[V]
[A]
T
VJ
= 125°C
20
4: P
GAV
= 0.5 W
0,1
1
10
100
5: P
GM
= 5 W
6: P
GM
= 10 W
1000
10000
1
10
0
100
1000
0
25
50
75
100 125 150
I
G
[mA]
Fig. 4 Gate trigger characteristics
I
G
[mA]
Fig. 5 Gate controlled delay time
T
C
[°C]
Fig. 6 Max. forward current
at case temperature
100
dc =
1
0.5
0.4
0.33
0.17
0.08
0,8
80
60
P
(AV)
40
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
0,6
Z
thJC
0,4
[K/W]
0,2
R
thi
[K/W]
0.030
0.036
0.104
0.150
0.280
10
1
10
2
10
3
t
i
[s]
0.0110
0.0001
0.0150
0.1000
0.0900
10
4
[W]
20
0
0
20
40
60
0
50
100
150
0,0
10
0
I
T(AV)
[A]
T
amb
[°C]
t [ms]
Fig. 8 Transient thermal impedance junction to case
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827d
© 2015 IXYS all rights reserved
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