IRAM256-2067A
Integrated Power Module for
Appliance Motor Drive Applications
Description
International Rectifier's IRAM256-2067A is a 20A, 600V Integrated Power Hybrid IC with Open Emitter pins for
advanced Appliance Motor Drives applications such as energy efficient Air Conditioner and Washing Machine.
IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to
simplify design.
This advanced HIC is a combination of IR's low VCE (on) Trench IGBT technology and the industry benchmark 3
phase high voltage, high speed driver (3.3V compatible) in a fully isolated thermally enhanced package. A built-in
high precision temperature monitor and over-current protection feature, along with the short-circuit rated IGBTs
and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a
Single in line package with full transfer mold structure and CTI>600 minimizes PCB space and resolves isolation
problems to heatsink.
Series
20A, 600V
•
•
•
•
•
•
•
•
•
•
•
Features
Integrated gate drivers and bootstrap diodes
Temperature monitor
Protection shutdown pin
Low VCE (on) Trench IGBT technology
Undervoltage lockout for all channels
Matched propagation delay for all channels
3.3V Schmitt-triggered input logic
Cross-conduction prevention logic
Motor power range up to 1.5kW / 85~253 Vac
Isolation 2000VRMS min and CTI> 600
High operating case temperature, T
CMAX
=125°C
Base Part Number
IRAM256-2067A
IRAM256-2067A2
Package Type
SIP1A, option 1 LF
SIP1A, option 2 LF
Standard Pack
Form
10 tubes
10 tubes
Quantity
80
80
Orderable Part Number
IRAM256-2067A
IRAM256-2067A2
1
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September 4, 2015
IRAM256-2067A
Internal Electrical Schematic – IRAM256-2067A
2
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IRAM256-2067A
Absolute Maximum Ratings
Symbol
V+
I
O
@ T
C
=25°C
I
O
@ T
C
=100°C
I
PK
F
P
P
D
V
ISO
T
J
(IGBT/Diode/IC)
T
C
T
STG
T
I
BDF
P
BR_Peak
V
S1,2,3
V
B1,2,3
V
CC
Description
V
CES
/ V
RRM
IGBT/ FW Diode Blocking Voltage
Positive Bus Input Voltage
RMS Phase Current (Note 1)
RMS Phase Current (Note 1)
Maximum Peak Phase Current (Note 2)
Maximum PWM Carrier Frequency
Maximum Power dissipation per IGBT @ TC =25°C
Isolation Voltage (1min)
Operating Junction Temperature
Operating Case Temperature Range
Storage Temperature Range
Mounting torque Range (M3 screw)
Bootstrap Diode Peak Forward Current
Bootstrap Resistor Peak Power (Single Pulse)
High side floating supply offset voltage
High side floating supply voltage
Low Side and logic fixed supply voltage
Input voltage LIN, HIN, I
TRIP
, FLT/EN
Min
---
---
---
---
---
---
---
---
-40
-40
-40
0.8
---
---
V
B1,2,3
- 20
-0.3
-0.3
-0.3
Max
600
450
20
10
30
20
34
2000
150
125
125
1.0
1.0
15
V
B1,2,3
+0.3
600
20
7
Nm
A
W
V
V
V
V
°C
kHz
W
V
RMS
A
Unit
V
V
IN
Note 1: See Figure 4 and
IR IPM Design Tool.
Note 2: t
P
<100ms.
Inverter Section Electrical Characteristics
V
(BE)CES
ΔV
(BR)CES
/ ΔT
V
CE(ON)
I
CES
V
FM
V
BDFM
R
9
ΔR
9
/R
9
C
1,2,3,4
C
6
C
7
3
Collector-to-Emitter Breakdown
Voltage
Temperature Coeff. Of
Breakdown Voltage
Collector-to-Emitter Saturation
Voltage
Zero Gate Voltage Collector
Current
Diode Forward Voltage Drop
Bootstrap Diode Forward
Voltage Drop
Bootstrap Resistor Value
Bootstrap Resistor Tolerance
VCC / VBS Capacitor Value
I
TRIP
Capacitor Value
NTC Capacitor Value
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600
---
---
---
---
---
---
---
---
---
---
---
---
---
---
V
BIAS
(V
CC
, V
BS1,2,3
)=15V, T
J
=25°C unless otherwise specified.
Symbol
Description
Min
Typ
---
0.3
1.5
1.7
8
100
1.8
1.4
1.65
1.3
22
---
47
1
2.2
Max
---
---
1.75
---
80
---
2.6
---
1.8
---
---
±5
---
---
---
Unit
V
V/°C
V
μA
V
V
Ω
%
nF
nF
nF
Conditions
V
IN
=0V, I
C
=250μA
V
IN
=0V, I
C
=250A
(25°C - 150°C)
I
C
=7.5A
I
C
=7.5A, T
J
=150°C
VIN=0V, V =600V
V
IN
=0V, V =600V, T
J
=150°C
I
F
=7.5A
I
F
=7.5A, T
J
=150°C
I
F
=1A
I
F
=1A, T
J
=150°C
+
+
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September 4, 2015
IRAM256-2067A
V
BIAS
(V
CC
, V
BS1,2,3
)=15V, T
J
=25°C unless otherwise specified.
Symbol
Description
Min
E
ON
E
OFF
E
TOT
E
REC
T
RR
E
ON
E
OFF
E
TOT
E
REC
T
RR
Q
G
RBSOA
SCSOA
SCSOA
I
CSC
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Diode Reverse Recovery
energy
Diode Reverse Recovery time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Diode Reverse Recovery
energy
Diode Reverse Recovery time
Turn-On IGBT Gate Charge
Reverse Bias Safe Operating
Area
Short Circuit Safe Operating
Area
Short Circuit Safe Operating
Area
Short Circuit Collector Current
5
3
---
---
---
---
---
---
---
---
---
---
---
---
Inverter Section Switching Characteristics
Typ
260
135
395
25
100
380
190
570
75
150
25
Max
---
---
---
---
---
---
---
---
---
---
---
Unit
Conditions
I
C
=7.5A, V =400V
V
CC
=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
I
C
=7.5A, V =400V
V
CC
=15V, L=1.2mH, T
J
=150°C
Energy losses include "tail" and
diode reverse recovery
See CT1
I
C
=12A, V =400V, V
GE
=15V
T
J
=150°C, I
C
=40A, V
P
=600V
+
V = 450V,
V
CC
=+15V to 0V
See CT3
+
+
+
µJ
ns
µJ
ns
nC
FULL SQUARE
---
---
80
---
---
---
µs
µs
A
T
J
=25°C, V =400V, V
GE
=+15V
to 0V
+
T
J
=100°C, V =400V, V
GE
=+15V
to 0V
T
J
=25°C, V =400V, V
GE
=15V
+
+
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V
differential (Note 3)
Symbol
Description
Min
TYP
Max
Unit
V
B1,2,3
V
S1,2,3
V
CC
V
IN
HIN
High side floating supply voltage
High side floating supply offset voltage
Low side and logic fixed supply voltage
Input voltage LIN, HIN, I
TRIP
, FLT/EN
High side PWM pulse width
V
S
+12.5
Note 4
13.5
V
SS
1
V
S
+15
---
15
---
---
V
S
+17.5
450
16.5
V
SS
+5
---
V
V
V
V
µs
µs
Deadtime
External dead time between HIN and LIN
1
---
---
Note 3: For more details, see IR21364 data sheet.
Note 4: Logic operational for V
S
from COM-5V to COM+600V. Logic state held for V
S
from COM-5V to COM-V
BS
.
(please refer to DT97-3 for more details)
4
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Submit Datasheet Feedback
September 4, 2015
IRAM256-2067A
V
BIAS
(V
CC
, V
BS1,2,3
)=15V, T
J
=25ºC, unless otherwise specified. The V
IN
and I
IN
parameters are referenced to COM and are
applicable to all six channels. (Note 3)
Symbol
Description
Min
TYP
Max
Unit
V
IN,TH+
V
IN,TH-
V
CCUV+
, V
BSUV+
V
CCUV-, VBSUV-
V
CCUVH, VBSUVH
I
QBS
I
QCC
I
LK
I
IN+
I
IN-
I
TRIP+
I
TRIP-
V
ITRIP
V
ITRIP_HYS
R
FLT
Positive going input threshold for LIN, HIN, FLT/EN
Negative going input threshold for LIN, HIN, FLT/EN
VCC/VBS supply undervoltage, Positive going threshold
VCC/VBS supply undervoltage, Negative going threshold
VCC and VBS supply undervoltage lock-out hysteresis
Quiescent VBS supply current
Quiescent VCC supply current
Offset Supply Leakage Current
Input bias current VIN=3.3V for LIN, HIN, FLT/EN
Input bias current VIN=0V for LIN, HIN, FLT/EN
I
TRIP
bias current V
ITRIP
=3.3V
I
TRIP
bias current V
ITRIP
=0V
I
TRIP
threshold Voltage
I
TRIP
Input Hysteresis
Fault low on resistance
2.5
---
10.6
10.4
---
---
---
---
---
-1
---
-1
0.44
---
---
---
---
11.1
10.9
0.2
---
---
---
100
---
3.3
---
0.49
0.07
50
---
0.8
11.6
11.4
---
150
3.2
50
195
---
6
---
0.54
---
100
V
V
V
V
V
µA
mA
µA
µA
µA
µA
µA
V
V
Ω
Static Electrical Characteristics Driver Function
Dynamic Electrical Characteristics
T
ON
T
OFF
T
FILIN
T
FILEN
T
EN
T
FLT
T
BLT-TRIP
T
ITRIP
D
T
M
T
T
FLT-CLR
Input to Output propagation
turn-on delay time (see Fig.12)
Input to Output propagation
turn-off delay time (see Fig.12)
Input filter time (HIN,LIN)
Input filter time (FLT/EN)
EN low to six switch turn-off
propagation delay (see fig. 3)
I
TRIP
to Fault propagation delay
I
TRIP
Blanking Time
I
TRIP
to six switch turn-off
propagation delay (see fig. 2)
Internal Dead Time injected by
driver
Matching Propagation Delay
Time (On & Off) all channels
Post I
TRIP
to six switch turn-off
clear time (see fig. 2)
V
BIAS
(V
CC
, V
BS1,2,3
)=15V, T
J
=25ºC, unless otherwise specified. Dynamic parameters are guaranteed by design. (Note 3)
Symbol
Description
Min
Typ
Max
Unit
Conditions
---
---
---
100
---
400
100
---
220
---
1.1
1
---
---
310
200
---
600
150
---
290
40
1.7
1.5
1.15
1.15
---
---
1.35
800
---
1.5
360
75
2.3
1.9
µs
µs
ns
ns
µs
ns
ns
µs
ns
ns
ms
V
IN
=0 or V
IN
=5V
V
EN
=0 or V
EN
=5V
V
IN
=0 or V
IN
=5V, V
EN
=0
V
IN
=0 or V
IN
=5V, V
ITRIP
=5V
V
IN
=0 or V
IN
=5V, V
ITRIP
=5V
I
C
=7.5A, V =300V
V
IN
=0 or V
IN
=5V
External dead time> 400ns
T
C
= 25°C
T
C
= 100°C
+
I
C
=7.5A, V =300V
+
5
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© 2015 International Rectifier
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September 4, 2015
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